GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant KEY FEATURES The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Available as packaged devices or as chips for hybrid applications These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. Suitable for applications to 18Ghz The NIP diode is used when negative bias current is available for forward conduction and will operate typically with -50 mA bias. Breakdown voltages are available up to 500 volts. (Higher voltages available on request. Consult factory for details.) These diodes have somewhat faster speeds as compared with similar PIN diodes. Low Distortion This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. High power handling Low Loss 1 RoHS Compliant www.MICROSEMI.com DESCRIPTION 1 Products are supplied with a Gold finish and are suitable for RoHS complaint assembly. Consult factory for details. APPLICATIONS 2B The GC4500 series can be used in RF circuits as an on/off element, as a switch or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include medium high power switches (ECM systems), TR or lobing switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phase arrays). APPLICATIONS/BENEFITS TR Switches Antenna Selector Switches The GC4500 series are also used as active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. Duplexers Digital Phase Shifters ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) 3B Rating Value Unit IR 0.5 uA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC Maximum Leakage Current @80% of Minimum Rated VB GC4510-GC4533 Symbol For the most current data, consult our website: www.MICROSEMI.com HU U Specifications are subject to change, consult factory for further information. These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2006 Rev.: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E VB(V) CJ (pF) 1 @VR=50V (Min) (Max) IR=10μA @100 mA TL(uS) IR=6mA/IF=10mA Thermal Resistance θ (˚C/W) (Max) (Typ) (Max) Rs(Ω) 2 GC4510 – 00 100 0.1 1.0 0.1 40 GC4511 – 00 100 0.25 0.6 0.2 25 GC4512 – 00 100 0.5 0.5 0.3 20 100 0.75 0.4 0.4 10 GC4513 – 00 3 GC4530 – 00 300 0.1 1.5 0.3 50 GC4531 – 00 300 0.25 1.2 0.5 30 GC4532 – 00 300 0.5 1.0 0.75 20 300 0.75 0.8 1.0 15 GC4533 - 00 3 www.MICROSEMI.com Model Number Notes: 1. Capacitance is measured at 1 MHz and -50 VOLTS 2. Resistance is measured using transmission loss techniques. 3. These devices are not available in all the package styles. Please consult the factory for specific case styles offered. DEVICE NOTES The tabulated specifications above are for package style 00. Diodes are also available in various packaged configurations. Some limitations apply. Consult factory for details. Each type offers trade offs in series resistance, junction capacitance, carrier lifetime and breakdown voltage; the proper choice of which depends on the end application. Standard polarity diodes (PIN) and faster speed PIN and NIP diodes are also available. (See data sheets for GC4400, GC4200, and GC4300 series respectively.) ELECTRICAL Copyright 2006 Rev.: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant TYPICAL RS CURVES TYPICAL RS CURVES www.MICROSEMI.com GRAPHS Copyright 2006 Rev.: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant PACKAGE STYLE 00 PACKAGE SYLE 30 www.MICROSEMI.com Notes: - Dimensions vary by model number - Consult factory for details - Order as GC45xx – 00 Notes: - Order as GC45xx – 30 PACKAGE STYLE 115 MECHANICAL Notes: - Order as GC45xx – 115 OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY Copyright 2006 Rev.: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4