AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. VDS 20V 6A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS =4.5V) < 27mΩ RDS(ON) (at VGS=2.5V) < 42mΩ RDS(ON) (at VGS=1.8V) < 55mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: May 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 30 PD TA=70°C ±12 5 IDM TA=25°C Power Dissipation B Units V 6 ID TA=70°C Maximum 20 RθJA RθJL -55 to 150 Typ 70 100 63 www.aosmd.com °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C VDS=0V, VGS= ±12V ±100 0.75 24 23 35 VGS=4.5V, ID=5A 18 27 mΩ VGS=2.5V, ID=4A 23 42 mΩ VGS=1.8V, ID=2A 31 55 mΩ gFS Forward Transconductance VDS=5V, ID=6A 25 Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ S 1 V 2 A 420 525 630 pF VGS=0V, VDS=10V, f=1MHz 65 95 125 pF 45 75 105 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A VSD Output Capacitance 1.1 nA 16 TJ=125°C Coss µA 5 VGS=10V, ID=6A Units V VDS=20V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=10V, VDS=10V, ID=6A 12.5 nC 6 nC 1 nC 2 nC 3 ns VGS=10V, VDS=10V, RL=1.7Ω, RGEN=3Ω 7.5 ns 20 ns tf Turn-Off Fall Time 6 ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: May 2011 www.aosmd.com Page 2 of 5 AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 15 2.5V 4.5V ID(A) ID (A) 30 VDS=5V 20 10 1.8V 125°C 5 10 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 1.5 2 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VGS=1.8V 40 35 VGS=2.5V 30 25 VGS=4.5V 20 15 VGS=10V 10 0 5 1.6 VGS=4.5V ID=5A VGS=2.5V ID=4A 1.4 17 VGS=1.8V 5 ID=2A 2 1.2 VGS=10V10 ID=6A 1 0.8 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 45 1.0E+02 ID=6A 1.0E+01 40 40 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 35 125°C 25 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 15 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: May 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=10V ID=6A 800 8 Capacitance (pF) VGS (Volts) Ciss 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Crss 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C RDS(ON) limited 10µs 1000 100µs 1.0 Power (W) ID (Amps) 10.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s 100 10 DC 0.0 1 0.01 0.1 1 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: May 2011 www.aosmd.com Page 4 of 5 AO3420 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 1: May 2011 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5