AOSMD AO3420 20v n-channel mosfet Datasheet

AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
VDS
20V
6A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 24mΩ
RDS(ON) (at VGS =4.5V)
< 27mΩ
RDS(ON) (at VGS=2.5V)
< 42mΩ
RDS(ON) (at VGS=1.8V)
< 55mΩ
SOT23
Top View
D
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: May 2011
Steady-State
Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol
t ≤ 10s
V
30
PD
TA=70°C
±12
5
IDM
TA=25°C
Power Dissipation B
Units
V
6
ID
TA=70°C
Maximum
20
RθJA
RθJL
-55 to 150
Typ
70
100
63
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°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
VDS=0V, VGS= ±12V
±100
0.75
24
23
35
VGS=4.5V, ID=5A
18
27
mΩ
VGS=2.5V, ID=4A
23
42
mΩ
VGS=1.8V, ID=2A
31
55
mΩ
gFS
Forward Transconductance
VDS=5V, ID=6A
25
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
S
1
V
2
A
420
525
630
pF
VGS=0V, VDS=10V, f=1MHz
65
95
125
pF
45
75
105
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.7
2.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
A
VSD
Output Capacitance
1.1
nA
16
TJ=125°C
Coss
µA
5
VGS=10V, ID=6A
Units
V
VDS=20V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
VGS=10V, VDS=10V, ID=6A
12.5
nC
6
nC
1
nC
2
nC
3
ns
VGS=10V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
7.5
ns
20
ns
tf
Turn-Off Fall Time
6
ns
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
14
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: May 2011
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Page 2 of 5
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
3.5V
15
2.5V
4.5V
ID(A)
ID (A)
30
VDS=5V
20
10
1.8V
125°C
5
10
25°C
VGS=3.5V
0
0
0
1
2
3
4
0
5
0.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
1.5
2
2.5
1.8
Normalized On-Resistance
55
50
45
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VGS=1.8V
40
35
VGS=2.5V
30
25
VGS=4.5V
20
15
VGS=10V
10
0
5
1.6
VGS=4.5V
ID=5A
VGS=2.5V
ID=4A
1.4
17
VGS=1.8V
5
ID=2A
2
1.2
VGS=10V10
ID=6A
1
0.8
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
45
1.0E+02
ID=6A
1.0E+01
40
40
1.0E+00
30
IS (A)
RDS(ON) (mΩ )
35
125°C
25
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
15
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: May 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=10V
ID=6A
800
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
600
400
Coss
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
Crss
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
RDS(ON)
limited
10µs
1000
100µs
1.0
Power (W)
ID (Amps)
10.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
100
10
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: May 2011
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Page 4 of 5
AO3420
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 1: May 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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