Toshiba GT30J324 Silicon n channel igbt high power switching application Datasheet

GT30J324
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT30J324
High Power Switching Applications
Fast Switching Applications
Unit: mm
•
Fourth-generation IGBT
•
Enhancement mode type
•
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 μs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
•
Low saturation voltage: VCE (sat) = 2.0 V (typ.)
•
FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Symbol
Rating
Unit
VCES
600
V
V
VGES
±20
DC
IC
30
1 ms
ICP
60
DC
IF
30
1 ms
IFM
60
Collector power dissipation
(Tc = 25°C)
PC
170
W
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
Emitter-collector forward
current
Storage temperature range
A
A
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance (IGBT)
Rth (j-c)
0.735
°C/W
Thermal resistance (diode)
Rth (j-c)
1.90
°C/W
Equivalent Circuit
Marking
Collector
TOSHIBA
GT30J324
Gate
Emitter
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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GT30J324
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
―
―
±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0
―
―
1.0
mA
VGE (OFF)
IC = 3 mA, VCE = 5 V
3.5
―
6.5
V
VCE (sat)
IC = 30 A, VGE = 15 V
―
2.0
2.45
V
VCE = 10 V, VGE = 0, f = 1 MHz
―
4650
―
pF
td (on)
―
0.09
―
tr
―
0.07
―
Inductive Load
―
0.24
―
VCC = 300 V, IC = 30 A
―
0.30
―
―
0.05
―
―
0.43
―
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Cies
Turn-on delay time
Rise time
Switching time
Turn-on time
ton
Turn-off delay time
td (off)
Fall time
Switching loss
tf
VGG = +15 V, RG = 24 Ω
(Note 1)
Turn-off time
toff
Turn-on switching
loss
Eon
―
1.00
―
Turn-off switching
loss
Eoff
―
0.80
―
(Note 2)
μs
mJ
Peak forward voltage
VF
IF = 30 A, VGE = 0
―
―
3.8
V
Reverse recovery time
trr
IF = 30 A, di/dt = −100 A/μs
―
60
―
ns
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
10%
0
−VGE
IC
L
IC
VCC
90%
90%
RG
VCE
0
VCE
10%
10%
10%
10%
td (on)
td (off)
tf
toff
tr
ton
Note 2: Switching loss measurement waveforms
VGE
90%
10%
0
IC
0
5%
VCE
Eoff
Eon
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GT30J324
IC – VCE
VCE – VGE
20
60
Common emitter
Common emitter
20
15
40
9
Collector-emitter voltage
Collector current IC
(A)
50 Tc = 25°C
VCE (V)
10
30
20
VGE = 8 V
10
0
0
1
2
3
Collector-emitter voltage
4
Tc = −40°C
16
12
8
60
30
4
IC = 10 A
0
0
5
VCE (V)
4
8
12
Gate-emitter voltage
VCE – VGE
16
VGE (V)
VCE – VGE
20
20
VCE (V)
Common emitter
Tc = 25°C
16
Collector-emitter voltage
Collector-emitter voltage
VCE (V)
Common emitter
12
8
30
60
4
IC = 10 A
0
0
4
8
12
Gate-emitter voltage
16
Tc = 125°C
16
12
8
30
60
4
IC = 10 A
0
0
20
VGE (V)
4
8
12
Gate-emitter voltage
IC – VGE
16
20
VGE (V)
VCE (sat) – Tc
60
4
Common emitter
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
(A)
50 VCE = 5 V
Collector current IC
20
40
30
20
25
10
Tc = 125°C
0
0
4
VGE = 15 V
60
3
30
2
IC = 10 A
1
−40
8
Gate-emitter voltage
12
16
0
−60
20
VGE (V)
−20
20
60
100
140
Case temperature Tc (°C)
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GT30J324
Switching time
1
(μs)
0.3
ton
0.1
td (on)
tr
0.03
0.01
1
3
10
30
100
Gate resistance
Switching time
1
0.3
10
30
100
300
15
20
25
30
(A)
toff, tf, td (off) – IC
3
1
toff
0.3 td (off)
tf
0.1
0.03
5
10
15
20
Collector current IC
Switching loss
Eon, Eoff – RG
25
30
(A)
Eon, Eoff – IC
3
Eon
1
Eoff
0.3
10
10
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24 Ω
: Tc = 25°C
: Tc = 125°C
(Note 1)
(Ω)
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25°C
: Tc = 125°C
(Note 2)
3
5
0.01
0
1000
Switching loss
Eon, Eoff (mJ)
RG
3
0.1
1
tr
Switching time
tf
Switching loss
10
0.03
10
Gate resistance
30
td (on)
toff, tf, td (off) – RG
toff
td (off)
3
ton
0.1
Collector current IC
0.1
0.01
1
0.3
(Ω)
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.03
1
ton, tr, td (on) – IC
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24 Ω
: Tc = 25°C
: Tc = 125°C
(Note 1)
0.01
0
1000
(μs)
3
RG
300
Switching time toff, tf, td (off)
Switching time toff, tf, td (off)
(μs)
10
Switching loss
Switching time
3
Eon, Eoff (mJ)
Switching time ton, tr, td (on)
3
ton, tr, td (on) – RG
Common emitter
VCC = 300 V
VGG = 15 V
IC = 30 A
: Tc = 25°C
: Tc = 125°C
(Note 1)
Switching time ton, tr, td (on)
(μs)
10
30
Gate resistance
100
RG
300
0.3
Eoff
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 24 Ω
: Tc = 25°C
: Tc = 125°C
(Note 2)
0.03
0.01
0
1000
Eon
1
5
10
15
20
Collector current IC
(Ω)
4
25
30
(A)
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GT30J324
VCE, VGE – QG
Collector-emitter voltage
(pF)
1000
300
100
Common emitter
Coes
VGE = 0
30 f = 1 MHz
Cres
400
20
Common emitter
RL = 10 Ω
Tc = 25°C
300
16
12
200
300
200
8
VCE = 100 V
100
4
VGE (V)
Cies
3000
Capacitance C
VCE (V)
500
Gate-emitter voltage
C – VCE
10000
Tc = 25°C
10
0.1
0.3
1
3
10
30
Collector-emitter voltage
100
300
0
0
1000
40
VCE (V)
80
120
0
200
160
Gate charge QG (nC)
trr, Irr – IF
IF – V F
60
10
1000
Forward current IF
40
30
20
25
Tc = 125°C
10
(ns)
Irr
3
300
1
100
trr
Common collector
di/dt = −100 A/μs
VGE = 0
: Tc = 25°C
: Tc = 125°C
0.3
−40
0
0
0.6
1.2
1.8
2.4
Forward voltage VF
3.0
0.1
0
3.6
5
10
30
IC max (pulsed)*
1000
(A)
(A)
Collector current IC
Collector current IC
300
30
DC operation
3
1 ms*
*: Single pulse
Tc = 25°C
Curves must be
derated linearly
0.3
with increase in
temperature.
10
3
1
0.3
10 ms*
10
(A)
50 μs*
IC max (continuous)
3
10
30
Reverse Bias SOA
10
0.1
1
25
100
100 μs*
1
20
Forward current IF
(V)
Safe Operating Area
100
15
30
trr
(A)
50 VGE = 0
Reverse recovery time
Reverse recovery current Irr (A)
Common collector
30
Collector-emitter voltage
100
300
0.1
1
1000
VCE (V)
Tj ≤ 125°C
VGE = 15 V
RG = 24 Ω
3
10
30
Collector-emitter voltage
5
100
VCE (V)
2006-11-01
Transient thermal resistance rth (t) (°C/W)
GT30J324
rth (t) – tw
102
10
1
FRD
100
IGBT
10
−1
10−2
10−3
10−4
10−5
Tc = 25°C
10
−4
10
−3
10
−2
Pulse width
10
−1
tw
10
0
101
102
(s)
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GT30J324
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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