MIC45212-1/-2 26V, 14A DC-to-DC Power Module Features General Description • • • • The MIC45212 is a synchronous, step-down regulator module, featuring a unique adaptive ON-time control architecture. The module incorporates a DC-to-DC controller, power MOSFETs, bootstrap diode, bootstrap capacitor and an inductor in a single package, simplifying the design and layout process for the end user. • • • • • • • • • • No Compensation Required Up to 14A Output Current >93% Peak Efficiency Output Voltage: 0.8V to 0.85*VIN with ±1% Accuracy Adjustable Switching Frequency from 200 kHz to 600 kHz Enable Input and Open-Drain Power Good Output Hyper Speed Control® (MIC45212-2) Architecture enables Fast Transient Response HyperLight Load® (MIC45212-1) improves Light Load Efficiency Supports Safe Start-up into Pre-Biased Output -40°C to +125°C Junction Temperature Range Thermal Shutdown Protection Short-Circuit Protection with Hiccup mode Adjustable Current Limit Available in 64-Pin 12 mm x 12 mm x 4 mm QFN Package This highly integrated solution expedites system design and improves product time-to-market. The internal MOSFETs and inductor are optimized to achieve high efficiency at a low output voltage. The fully optimized design can deliver up to 14A current under a wide input voltage range of 4.5V to 26V, without requiring additional cooling. The MIC45212-1 uses the HyperLight Load (HLL) while the MIC45212-2 uses the Hyper Speed Control (HSC) architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45212 offers 1% output accuracy that can be adjusted from 0.8V to 0.85*VIN with two external resistors. Additional features include thermal shutdown protection, input undervoltage lockout, adjustable current limit and short-circuit protection. The MIC45212 allows for safe start-up into a pre-biased output. Applications • • • • High-Power Density Point-of-Load Conversion Servers, Routers, Networking and Base Stations FPGAs, DSP and Low-Voltage ASIC Power Supplies Industrial and Medical Equipment Data sheet and other support documentation can be found on the Microchip web site at: www.microchip.com. Typical Application Schematic VIN 12V PVDD ANODE 5VDD BST PG RIA VOUT PVIN MIC45212 VIN CIN VOUT 0.8V to 0.85 * VIN/Up to 14A FREQ FB RIB CFF ON COUT RFB2 SW OFF RFB1 RLIM EN GND 2017 Microchip Technology Inc. ILIM PGND DS20005607A-page 1 MIC45212-1/-2 Package Types 54 53 ANODE 55 BST 56 BST 57 NC 58 BST GND 59 PG 60 FB FREQ 61 VIN 62 EN 63 5VDD GND 64 5VDD MIC45212-1/-2 64-Pin 12 mm x 12 mm x 4 mm QFN (Top View) 52 51 GND 1 PVDD 2 PVDD 3 ILIM 4 PGND 5 46 RIA KEEPOUT BST PGND ANODE 49 ANODE 48 RIB 47 RIA 6 45 SW 7 44 SW SW 8 43 SW SW 9 42 SW SW 10 41 SW KEEPOUT 11 40 SW PVIN 12 39 SW PVIN 13 PVIN 14 PGND SW PVIN ePAD 38 SW 37 KEEPOUT 36 VOUT PVIN 15 PVIN 16 35 VOUT PVIN 17 34 VOUT PVIN 18 33 VOUT VOUT ePAD 31 32 VOUT 30 VOUT 29 VOUT 28 VOUT 27 VOUT 26 VOUT 25 VOUT 24 VOUT 23 VOUT PVIN 22 KEEPOUT 21 PVIN 20 PVIN 19 PVIN DS20005607A-page 2 50 2017 Microchip Technology Inc. MIC45212-1/-2 Functional Block Diagram VIN 5VDD VDD VIN PVIN PVDD PVDD VOUT ILIM ILIM 2017 Microchip Technology Inc. DS20005607A-page 3 MIC45212-1/-2 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† VPVIN, VVIN to PGND................................................................................................................................. –0.3V to +30V VPVDD, V5VDD, VANODE to PGND ................................................................................................................ –0.3V to +6V VSW, VFREQ, VILIM, VEN to PGND .................................................................................................. –0.3V to (VIN + 0.3V) VBST to VSW................................................................................................................................................. –0.3V to +6V VBST to PGND .......................................................................................................................................... –0.3V to +36V VPG to PGND .............................................................................................................................. –0.3V to (5VDD + 0.3V) VFB, VRIB to PGND...................................................................................................................... –0.3V to (5VDD + 0.3V) PGND to GND ........................................................................................................................................... -0.3V to +0.3V Junction Temperature........................................................................................................................................... +150°C Storage Temperature (TS) ..................................................................................................................... –65°C to +150°C Lead Temperature (soldering, 10s) ...................................................................................................................... +260°C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Operating Ratings(1) Supply Voltage (VPVIN, VVIN) ......................................................................................................................... 4.5V to 26V Output Current ........................................................................................................................................................... 14A Enable Input (VEN) ............................................................................................................................................ 0V to VIN Power-Good (VPG) ......................................................................................................................................... 0V to 5VDD Junction Temperature (TJ)..................................................................................................................... –40°C to +125°C Junction Thermal Resistance(2) 12 mm x 12 mm x 4 mm QFN-64 (JA) ...........................................................................................................12.6°C/W 12 mm x 12 mm 4 mm QFN-64 (JC) ................................................................................................................3.5°C/W Note 1: The device is not ensured to function outside the operating range. 2: JA and JC were measured using the MIC45212 evaluation board. DS20005607A-page 4 2017 Microchip Technology Inc. MIC45212-1/-2 ELECTRICAL CHARACTERISTICS(1) TABLE 1-1: Electrical Specifications: unless otherwise specified, VPVIN = VVIN; VIN = VEN = 12V; VOUT = 3.3V; VBST – VSW = 5V; TJ = +25°C. Boldface values indicate –40°C TJ +125°C. Symbol Parameter Min. Typ. Max. Units Test Conditions Power Supply Input VIN, VPVIN Input Voltage Range 4.5 — 26 V IQ Quiescent Supply Current (MIC45212-1) — — 0.75 mA VFB = 1.5V IQ Quiescent Supply Current (MIC45212-2) — 2.1 3 mA VFB = 1.5V — 0.37 — mA PVIN = VIN = 12V, VOUT = 1.8V, IOUT = 0A, fSW = 600 kHz — IIN Operating Current: MIC45208-1 — 54 — ISHDN Shutdown Supply Current — 0.1 10 µA SW = Unconnected, VEN = 0V VDD 5VDD Output Voltage 4.8 5.1 5.4 V VIN = 7V to 26V, I5VDD = 10 mA UVLO MIC45208-2 5VDD Output 5VDD UVLO Threshold 3.8 4.2 4.6 V V5VDD Rising UVLO_HYS 5VDD UVLO Hysteresis — 400 — mV V5VDD Falling VDD(LR) 0.6 2 3.6 % 0.792 0.8 0.808 0.784 0.8 0.816 — 5 500 nA LDO Load Regulation I5VDD = 0 to 40 mA Reference VFB Feedback Reference Voltage IFB_BIAS Feedback Bias Current V TJ = +25°C –40°C TJ +125°C VFB = 0.8V Enable Control ENHIGH EN Logic Level High 1.8 — — V — ENLOW EN Logic level Low — — 0.6 V — ENHYS EN Hysteresis — 200 — mV — IENBIAS EN Bias Current — 5 10 µA VEN = 12V 400 600 750 — 350 — Oscillator VFREQ = VIN, IOUT = 2A fSW Switching Frequency DMAX Maximum Duty Cycle — 85 — % — DMIN Minimum Duty Cycle — 0 — % VFB = 1V tOFF(MIN) Minimum OFF-Time 140 200 260 ns — — 3 — ms FB Rising from 0V to 0.8V VCL_OFFSET Current-Limit Threshold –30 –14 0 mV VFB = 0.79V VSC Short-Circuit Threshold –23 –7 9 mV VFB = 0V ICL Current-Limit Source Current 50 70 90 µA VFB = 0.79V ISC Short-Circuit Source Current 25 35 45 µA VFB = 0V ISW_Leakage SW, BST Leakage Current — — 10 µA — IFREQ_LEAK FREQ Leakage Current — — 10 µA — kHz VFREQ = 50% VIN, IOUT = 2A Soft Start tSS Soft Start Time Short-Circuit Protection Leakage Note 1: Specification for packaged product only. 2017 Microchip Technology Inc. DS20005607A-page 5 MIC45212-1/-2 TABLE 1-1: ELECTRICAL CHARACTERISTICS(1) (CONTINUED) Electrical Specifications: unless otherwise specified, VPVIN = VVIN; VIN = VEN = 12V; VOUT = 3.3V; VBST – VSW = 5V; TJ = +25°C. Boldface values indicate –40°C TJ +125°C. Symbol Parameter Min. Typ. Max. Units Test Conditions Power Good (PG) VPG_TH PG Threshold Voltage 85 90 95 %VOUT Sweep VFB from Low-to-High %VOUT Sweep VFB from High-to-Low VPG_HYS PG Hysteresis — 6 — tPG_DLY PG Delay Time — 100 — µs Sweep VFB from Low-to-High VPG_LOW PG Low Voltage — 70 200 mV VFB < 90% x VNOM, IPG = 1 mA Thermal Protection TSHD Overtemperature Shutdown — 160 — °C TJ Rising TSHD_HYS Overtemperature Shutdown Hysteresis — 15 — °C — Note 1: Specification for packaged product only. DS20005607A-page 6 2017 Microchip Technology Inc. MIC45212-1/-2 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. FIGURE 2-1: VIN Operating Supply Current vs. Input Voltage (MIC45212-1). FIGURE 2-4: Temperature. VDD Supply Voltage vs. FIGURE 2-2: VIN Operating Supply Current vs. Temperature (MIC45212-2). FIGURE 2-5: Temperature. Enable Threshold vs. FIGURE 2-3: Input Voltage. FIGURE 2-6: Temperature. EN Bias Current vs. VIN Shutdown Current vs. 2017 Microchip Technology Inc. DS20005607A-page 7 MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. FIGURE 2-7: Temperature. Feedback Voltage vs. FIGURE 2-10: vs. Temperature. FIGURE 2-8: vs.Temperature. Output Voltage FIGURE 2-11: Efficiency vs. Output Current (MIC45212-1, VIN = 5V). FIGURE 2-9: vs.Temperature. Switching Frequency FIGURE 2-12: Efficiency vs. Output Current (MIC45212-1, VIN = 12V). DS20005607A-page 8 Output Peak Current-Limit 2017 Microchip Technology Inc. MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. FIGURE 2-13: Efficiency vs. Output Current (MIC45212-1, VIN = 24V). FIGURE 2-16: Efficiency vs. Output Current (MIC45212-2, VIN = 24V). FIGURE 2-14: Efficiency vs. Output Current (MIC45212-2, VIN = 5V). FIGURE 2-17: IC Power Dissipation vs. Output Current (MIC45212-2, VIN = 5V). FIGURE 2-15: Efficiency vs. Output Current (MIC45212-2, VIN = 12V). FIGURE 2-18: IC Power Dissipation vs. Output Current (MIC45212-2, VIN = 12V). 2017 Microchip Technology Inc. DS20005607A-page 9 MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. FIGURE 2-19: IC Power Dissipation vs. Output Current (MIC45212-2, VIN = 24V). FIGURE 2-20: DS20005607A-page 10 FIGURE 2-21: (MIC45212-1). Load Regulation Line Regulation. 2017 Microchip Technology Inc. MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. y VIN Soft Turn On VIN (10V/div) VIN = 12V VOUT = 1.8V IOUT = 14A VOUT (1V/div) VEN (2V/div) PGOOD (5V/div) VOUT (1V/div) IIN (5A/div) IIN (2A/div) Time (2ms/div) Time (2ms/div) FIGURE 2-22: VIN Soft Turn-On. FIGURE 2-25: VOUT (1V/div) VIN = 12V VOUT = 1.8V IOUT = 1A VPRE-BIAS = 0.5V VOUT (1V/div) PGOOD (5V/div) VIN = 12V VOUT = 1.8V IOUT = 14A IIN (5A/div) PGOOD (5V/div) Time (8ms/div) Time (2ms/div) VIN Soft Turn-Off. FIGURE 2-26: Output. y VIN = 12V VOUT = 1.8V IOUT = 14A VEN (2V/div) VOUT (1V/div) IIN (2A/div) IIN (2A/div) Time (2ms/div) Enable Turn-On Delay and 2017 Microchip Technology Inc. VIN Start-up with Pre-Biased ab e u VOUT (1V/div) FIGURE 2-24: Rise Time. p VIN (10V/div) VIN (10V/div) VEN (2V/div) Enable Turn-Off Delay. p VIN Soft Turn Off FIGURE 2-23: VIN = 12V VOUT = 1.8V IOUT = 14A O / u O VIN = 12V VOUT = 1.8V IOUT = 14A Time (8ms/div) FIGURE 2-27: Enable Turn-On/Turn-Off. DS20005607A-page 11 MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. Output Recovery from Short Circuit Power-Up Into Short Circuit VIN (10V/div) VOUT (20mV/div) VOUT (1V/div) VIN = 12V VOUT = 1.8V VIN = 12V VOUT = 1.8V IOUT = Short = Wire Across Output IIN (1A/div) IOUT (5A/div) Time (2ms/div) FIGURE 2-28: Time (8ms/div) Power-up into Short Circuit. FIGURE 2-31: Circuit. VIN = 12V VOUT = 1.8V IOUT = Short = Wire Across Output VOUT (50mV/div) VOUT (1V/div) VIN = 12V VOUT = 1.8V IPK-CL = 20.2A IOUT (10A/div) IIN (200mA/div) Time (800μs/div) FIGURE 2-29: Output Recovery from Short Peak Current Limit Threshold Enabled Into Short Circuit VEN (2V/div) Pulse: 2Hz; 0V - 3.3V; 20ms Enabled into Short Circuit. Time (8ms/div) FIGURE 2-32: Threshold. Peak Current-Limit Short Circuit VIN = 12V VOUT = 1.8V VOUT (1V/div) Pulse: 2Hz; 0V - 3.3V; 20ms IOUT (5A/div) Time (2ms/div) FIGURE 2-30: Short Circuit During Steady State with 14A Load. DS20005607A-page 12 FIGURE 2-33: Output Recovery from Thermal Shutdown. 2017 Microchip Technology Inc. MIC45212-1/-2 Note: Unless otherwise indicated, VIN = VEN = 12V, VOUT = 1.8V, VBST – VSW = 5V, TJ = +25°C. g a se t VIN = 12V VOUT = 1.8V IOUT = 14A VOUT (20mV/div) espo se ( VOUT (100mV/div) C 5 ) VIN = 12V VOUT = 1.8V IOUT = 1A to 8A VSW (5V/div) IOUT (5A/div) IOUT (10A/div) Time (40μs/div) Time (1μs/div) FIGURE 2-34: di/dt = 2A/μs COUT = 2 x 100μF + 270μF POS Switching Waveforms. FIGURE 2-37: (MIC45212-1). Transient Response p Switching Waveforms (MIC45212 1) ( VOUT (100mV/div) VOUT (20mV/div) AC-Coupled ) VIN = 12V VOUT = 1.8V IOUT = 7A to 14A VIN = 12V VOUT = 1.8V IOUT = 50mA VSW (10V/div) IOUT (50mA/div) IOUT (5A/div) Time (40μs/div) Time (20μs/div) FIGURE 2-35: (MIC45212-1). Switching Waveforms g ( , FIGURE 2-38: (MIC45212-2). ) Transient Response OUT VIN = 12V VOUT = 1.8V IOUT = 0A VOUT (20mV/div) di/dt = 2A/μs COUT = 2 x 100μF + 270μF POS VEN (2V/div) μ VIN = 12V VOUT = 1.8V IOUT = 14A VOUT (1V/div) VSW (5V/div) IOUT (10A/div) IIN (2A/div) Time (1μs/div) FIGURE 2-36: Switching Waveforms (IOUT = 0A, MIC45212-2) 2017 Microchip Technology Inc. Output ALE cap, 3000μF Time (8ms/div) FIGURE 2-39: Inrush with COUT = 3000 µF. DS20005607A-page 13 MIC45212-1/-2 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MIC45212 Pin Number Pin Name 1, 56, 64 GND Analog Ground: Connect bottom feedback resistor to GND. GND and PGND are internally connected. 2, 3 PVDD PVDD: Supply input for the internal low-side power MOSFET driver. 4 ILIM 5, 6 PGND Power Ground: PGND is the return path for the step-down power module power stage. The PGND pin connects to the sources of the internal low-side power MOSFET, the negative terminals of input capacitors and the negative terminals of output capacitors. 7-10, 38-44 SW The SW pin connects directly to the switch node. Due to the high-speed switching on this pin, the SW pin should be routed away from sensitive nodes. The SW pin also senses the current by monitoring the voltage across the low-side MOSFET during off time. 12-22 PVIN Power Input Voltage: Connection to the drain of the internal high-side power MOSFET. Connects an input capacitor from PVIN to PGND. 24-36 VOUT Power Output Voltage: Connected to the internal inductor. The output capacitor should be connected from this pin to PGND, as close to the module as possible. 46, 47 RIA Pin Function Current Limit: Connect a resistor between ILIM and SW to program the current limit. Ripple Injection Pin A: Leave floating, no connection. 48 RIB 49-51 ANODE Ripple Injection Pin B: Connect this pin to FB. 52-54 BST Connection to the internal bootstrap circuitry and high-side power MOSFET drive circuitry. Leave floating, no connection. 55 NC No Connection. 57 FB Feedback: Input to the transconductance amplifier of the control loop. The FB pin is referenced to 0.8V. A resistor divider connecting the feedback to the output is used to set the desired output voltage. Connect the bottom resistor from FB to GND. 58 PG Power Good: Open-Drain Output. If used, connect to an external pull-up resistor of at least 10 kOhm between PG and the external bias voltage. 59 EN Enable: A logic signal to enable or disable the step-down regulator module operation. The EN pin is TTL/CMOS compatible. Logic high = enable, logic low = disable or shutdown. Do not leave floating. 60 VIN Internal 5V Linear Regulator Input: A 1 µF ceramic capacitor from VIN to GND is required for decoupling. 61 FREQ Switching Frequency Adjust: Use a resistor divider from VIN to GND to program the switching frequency. Connecting FREQ to VIN sets frequency = 600 kHz. 62, 63 5VDD Internal +5V linear regulator output. Powered by VIN, 5VDD is the internal supply bus for the device. In the applications with VIN<+5.5V, 5VDD should be tied to VIN to bypass the linear regulator. Anode Bootstrap Diode: Anode connection of internal bootstrap diode; this pin should be connected to the PVDD pin. 11, 23, 37, 45 KEEPOUT — PVIN ePAD PVIN Exposed Pad: Internally connected to the PVIN pins. — VOUT ePAD VOUT Exposed Pad: Internally connected to the VOUT pins. DS20005607A-page 14 Depopulated pin positions. 2017 Microchip Technology Inc. MIC45212-1/-2 4.0 FUNCTIONAL DESCRIPTION The MIC45212 is an adaptive on-time synchronous buck regulator module, built for high input voltage to low output voltage conversion applications. The MIC45212 is designed to operate over a wide input voltage range, from 4.5V to 26V, and the output is adjustable with an external resistor divider. An adaptive ON-time control scheme is employed to obtain a constant switching frequency in steady state and to simplify the control compensation. Hiccup mode overcurrent protection is implemented by sensing low-side MOSFET’s RDS(ON). The device features internal soft start, enable, UVLO and thermal shutdown. The module has integrated switching FETs, inductor, bootstrap diode, resistor, capacitor and controller. 4.1 As shown in Figure 4-1, in association with Equation 4-1, the output voltage is sensed by the MIC45212 Feedback pin, FB, via the voltage dividers, RFB1 and RFB2, and compared to a 0.8V reference voltage, VREF, at the error comparator through a low-gain transconductance (gM) amplifier. If the feedback voltage decreases and falls below 0.8V, then the error comparator will trigger the control logic and generate an ON-time period. The ON-time period length is predetermined by the “Fixed tON Estimator” circuitry. RFB1 Compensation Comp gM – + – + FB RFB2 VREF + 0.8V – FIGURE 4-1: FB Pin. Output Voltage Sense via EQUATION 4-1: ON-TIME ESTIMATION tON(ESTIMATED) = VOUT VIN fSW Where: VOUT = Output voltage The maximum duty cycle is obtained from the 200 ns tOFF(MIN): EQUATION 4-2: Theory of Operation EA At the end of the ON-time period, the internal high-side driver turns off the high-side MOSFET and the low-side driver turns on the low-side MOSFET. In most cases, the OFF-time period length depends upon the feedback voltage. When the feedback voltage decreases and the output of the gM amplifier falls below 0.8V, the ON-time period is triggered and the OFF-time period ends. If the OFF-time period determined by the feedback voltage, is less than the minimum OFF-time tOFF(MIN), which is about 200ns, the MIC45212 control logic will apply the tOFF(MIN) instead. tOFF(MIN) is required to maintain enough energy in the Boost Capacitor (CBST) to drive the high-side MOSFET. DMAX = MAXIMUM DUTY CYCLE 200 ns tS – tOFF(MIN) =1– t tS S Where: tS = 1/fSW It is not recommended to use the MIC45212 device with an OFF-time close to tOFF(MIN) during steady-state operation. The adaptive ON-time control scheme results in a constant switching frequency in the MIC45212 during steady-state operation. Also, the minimum tON results in a lower switching frequency in high VIN to VOUT applications. During load transients, the switching frequency is changed due to the varying OFF-time. To illustrate the control loop operation, we will analyze both the steady-state and load transient scenarios. For easy analysis, the gain of the gM amplifier is assumed to be 1. With this assumption, the inverting input of the error comparator is the same as the feedback voltage. Figure 4-2 shows the MIC45212 control loop timing during steady-state operation. During steady-state operation, the gM amplifier senses the feedback voltage ripple, which is proportional to the output voltage ripple, plus injected voltage ripple, to trigger the ON-time period. The ON-time is predetermined by the tON estimator. The termination of the OFF-time is controlled by the feedback voltage. At the valley of the feedback voltage ripple, which occurs when VFB falls below VREF, the OFF-time period ends and the next ON-time period is triggered through the control logic circuitry. VIN = Power stage input voltage fSW = Switching frequency 2017 Microchip Technology Inc. DS20005607A-page 15 MIC45212-1/-2 Unlike true Current mode control, the MIC45212 uses the output voltage ripple to trigger an ON-time period. The output voltage ripple is proportional to the inductor current ripple if the ESR of the output capacitor is large enough. IL IL(PP) IOUT VOUT VOUT(PP) = ESRCOUT IL(PP) VFB VFB(PP) = VOUT(PP) VREF DH RFB2 RFB1 + RFB2 Trigger ON-Time if VFB is Below VREF Estimated ON-time FIGURE 4-2: Timing. MIC45212 Control Loop Figure 4-3 shows the operation of the MIC45212 during a load transient. The output voltage drops due to the sudden load increase, which causes the VFB to be less than VREF. This will cause the error comparator to trigger an ON-time period. At the end of the ON-time period, a minimum OFF-time, tOFF(MIN), is generated to charge the Bootstrap Capacitor (CBST) since the feedback voltage is still below VREF. Then, the next ON-time period is triggered due to the low feedback voltage. Therefore, the switching frequency changes during the load transient, but returns to the nominal fixed frequency once the output has stabilized at the new load current level. With the varying duty cycle and switching frequency, the output recovery time is fast and the output voltage deviation is small. Note that the instantaneous switching frequency during load transient remains bounded and cannot increase arbitrarily. The minimum is limited by tON + tOFF(MIN). Because the variation in VOUT is relatively limited during load transient, tON stays virtually close to its steady-state value. IOUT Full Load No Load VOUT VFB VREF DH In order to meet the stability requirements, the MIC45212 feedback voltage ripple should be in phase with the inductor current ripple, and is large enough to be sensed by the gM amplifier and the error comparator. The recommended feedback voltage ripple is 20 mV ~ 100 mV over full input voltage range. If a low-ESR output capacitor is selected, then the feedback voltage ripple may be too small to be sensed by the gM amplifier and the error comparator. Also, the output voltage ripple and the feedback voltage ripple are not necessarily in phase with the inductor current ripple if the ESR of the output capacitor is very low. In these cases, ripple injection is required to ensure proper operation. Please refer to Section 5.5 “Ripple Injection” in Section 5.0 “Application Information” for more details about the ripple injection technique. 4.2 Discontinuous Mode (MIC45212-1 only) In Continuous mode, the inductor current is always greater than zero; however, at light loads, the MIC45212-1 is able to force the inductor current to operate in Discontinuous mode. Discontinuous mode is where the inductor current falls to zero, as indicated by trace (IL) shown in Figure 4-4. During this period, the efficiency is optimized by shutting down all the non-essential circuits and minimizing the supply current as the switching frequency is reduced. The MIC45212-1 wakes up and turns on the high-side MOSFET when the feedback voltage, VFB, drops below 0.8V. The MIC45212-1 has a Zero-Crossing (ZC) comparator that monitors the inductor current by sensing the voltage drop across the low-side MOSFET during its ON-time. If the VFB > 0.8V and the inductor current goes slightly negative, then the MIC45212-1 automatically powers down most of the IC circuitry and goes into a Low-Power mode. Once the MIC45212-1 goes into Discontinuous mode, both DL and DH are low, which turns off the high-side and low-side MOSFETs. The load current is supplied by the output capacitors and VOUT drops. If the drop of VOUT causes VFB to go below VREF, then all the circuits will wake-up into normal Continuous mode. First, the bias currents of most circuits reduced during the Discontinuous mode are restored, and then a tON pulse is triggered before the drivers are turned on to avoid any possible glitches. Finally, the high-side driver is turned on. Figure 4-4 shows the control loop timing in Discontinuous mode. tOFF(MIN) FIGURE 4-3: Response. DS20005607A-page 16 MIC45212 Load Transient 2017 Microchip Technology Inc. MIC45212-1/-2 4.4 IL Crosses 0 and VFB > 0.8 Discontinuous Mode Starts IL VFB < 0.8V, Wake-up from Discontinuous Mode Current Limit The MIC45212 uses the RDS(ON) of the low-side MOSFET and the external resistor, connected from the ILIM pin to the SW node, to set the current limit. 0 VFB MIC45212 VIN VIN VREF BST ZC CIN SW SW CS R15 ILIM FB C15 DH PGND Estimated ON-Time DL FIGURE 4-4: MIC45212-1 Control Loop Timing (Discontinuous Mode). During Discontinuous mode, the bias current of most circuits is substantially reduced. As a result, the total power supply current during Discontinuous mode is only about 370 µA, allowing the MIC45212-1 to achieve high efficiency in light load applications. 4.3 Soft Start Soft start reduces the input power supply surge current at start-up by controlling the output voltage rise time. The input surge appears while the output capacitor is charged up. The MIC45212 implements an internal digital soft start by making the 0.8V reference voltage, VREF, ramp from 0 to 100% in about 3 ms with 9.7 mV steps. Therefore, the output voltage is controlled to increase slowly by a staircase VFB ramp. Once the soft start cycle ends, the related circuitry is disabled to reduce current consumption. PVDD must be powered up at the same time or after VIN to make the soft start function correctly. 2017 Microchip Technology Inc. FIGURE 4-5: Circuit. MIC45212 Current-Limiting In each switching cycle of the MIC45212, the inductor current is sensed by monitoring the low-side MOSFET in the OFF period. The Sensed Voltage, VILIM, is compared with the Power Ground (PGND) after a blanking time of 150 ns. In this way, the drop voltage over the resistor, R15 (VCL), is compared with the drop over the bottom FET generating the short current limit. The small Capacitor (C15) connected from the ILIM pin to PGND filters the switching node ringing during the OFF-time, allowing a better short limit measurement. The time constant created by R15 and C15 should be much less than the minimum OFF-time. The VCL drop allows programming of the short limit through the value of the Resistor (R15). If the absolute value of the voltage drop on the bottom FET becomes greater than VCL, and the VILIM falls below PGND, an overcurrent is triggered causing the IC to enter Hiccup mode. The hiccup mode sequence, including the soft start, reduces the stress on the switching FETs, and protects the load and supply for severe short conditions. The short-circuit current limit can be programmed by using Equation 4-3. DS20005607A-page 17 MIC45212-1/-2 EQUATION 4-3: PROGRAMMING CURRENT LIMIT The peak-to-peak inductor current ripple is: EQUATION 4-4: (ICLIM + IL(PP) 0.5) RDS(ON) + VCL_OFFSET R15 = ICL Where: ICLIM = Desired current limit RDS(ON) = On resistance of low-side power MOSFET, 6 m typically VCL_OFFSET = Current-limit threshold (typical absolute value is 14 mV per Table 1-1) ICL = Current-limit source current (typical value is 70 µA per Table 1-1) IL(PP) = Inductor current peak-to-peak; since the inductor is integrated, use Equation 4-4 to calculate the inductor ripple current IL(PP) = PEAK-TO-PEAK INDUCTOR CURRENT RIPPLE VOUT (VIN(MAX) – VOUT) VIN(MAX) fSW L The MIC45212 has a 0.6 µH inductor integrated into the module. In case of a hard short, the short limit is folded down to allow an indefinite hard short on the output without any destructive effect. It is mandatory to make sure that the inductor current used to charge the output capacitance during soft start is under the folded short limit; otherwise, the supply will go into hiccup mode and may not finish the soft start successfully. The MOSFET RDS(ON) varies 30% to 40% with temperature; therefore, it is recommended to add a 50% margin to ICLIM in Equation 4-3 to avoid false current limiting due to increased MOSFET junction temperature rise. With R15 = 1.69 k and C15 = 15 pF, the typical output current limit is 16.8A. DS20005607A-page 18 2017 Microchip Technology Inc. MIC45212-1/-2 5.0 APPLICATION INFORMATION 5.1 Setting the Switching Frequency The MIC45212 switching frequency can be adjusted by changing the value of resistors, R1 and R2. MIC45212 VIN BST CIN SW CS 5.2 Output Capacitor Selection The type of output capacitor is usually determined by the application and its Equivalent Series Resistance (ESR). Voltage and RMS current capability are two other important factors for selecting the output capacitor. Recommended capacitor types are MLCC, OS-CON and POSCAP. The output capacitor’s ESR is usually the main cause of the output ripple. The MIC45212 requires ripple injection and the output capacitor ESR affects the control loop from a stability point of view. The maximum value of ESR is calculated as in Equation 5-2: EQUATION 5-2: ESR MAXIMUM VALUE R1 ESRCOUT FREQ R2 FB PGND VOUT(PP) IL(PP) Where: VOUT(PP) = Peak-to-peak output voltage ripple FIGURE 5-1: Adjustment. Switching Frequency Equation 5-1 gives the estimated switching frequency: EQUATION 5-1: ESTIMATED SWITCHING FREQUENCY IL(PP) = Peak-to-peak inductor current ripple The total output ripple is a combination of the ESR and output capacitance. The total ripple is calculated in Equation 5-3: EQUATION 5-3: R2 fSW = fO R1 + R2 VOUT(PP) = Where: fO = 600 kHz (typical per TABLE 1-1: “Electrical Characteristics(1)” table) TOTAL OUTPUT RIPPLE IL(PP) 2 2 + (I L(PP) ESRCOUT) f 8 OUT SW C R1 = 100 k is recommended Where: R2 = Needs to be selected in order to set the required switching frequency fSW = Switching frequency FIGURE 5-2: COUT = Output capacitance value Switching Frequency vs. R2. 2017 Microchip Technology Inc. DS20005607A-page 19 MIC45212-1/-2 As described in Section 4.1 “Theory of Operation” in Section 4.0 “Functional Description”, the MIC45212 requires at least a 20 mV peak-to-peak ripple at the FB pin to make the gM amplifier and the error comparator behave properly. Also, the output voltage ripple should be in phase with the inductor current. Therefore, the output voltage ripple caused by the output capacitors’ value should be much smaller than the ripple caused by the output capacitor, ESR. If low-ESR capacitors, such as ceramic capacitors, are selected as the output capacitors, a ripple injection method should be applied to provide enough feedback voltage ripple. Please refer to Section 5.5 “Ripple Injection” in Section 5.0 “Application Information” for more details. The output capacitor RMS current is calculated in Equation 5-4: EQUATION 5-4: 12 DISSIPATED POWER IN OUTPUT CAPACITOR PDISS(COUT) = ICOUT(RMS) ESRCOUT 2 Input Capacitor Selection POWER DISSIPATED IN INPUT CAPACITOR PDISS(CIN(RMS)) = ICIN(RMS)2 ESRCIN The general rule is to pick the capacitor with a ripple current rating equal to or greater than the calculated worst-case RMS capacitor current. Equation 5-9 should be used to calculate the input capacitor. Also, it is recommended to keep some margin on the calculated value: EQUATION 5-9: INPUT CAPACITOR CALCULATION I (1 – D) CIN OUT(MAX) fSW dV IL(PP) The power dissipated in the output capacitor is: 5.3 EQUATION 5-8: OUTPUT CAPACITOR RMS CURRENT ICOUT(RMS) = EQUATION 5-5: The power dissipated in the input capacitor is: Where: dV = Input ripple fSW = Switching frequency 5.4 Output Voltage Setting Components The MIC45212 requires two resistors to set the output voltage, as shown in Figure 5-3: The input capacitor for the Power Stage Input, PVIN, should be selected for ripple current rating and voltage rating. The input voltage ripple will primarily depend on the input capacitor’s ESR. The peak input current is equal to the peak inductor current, so: RFB1 gM AMP EQUATION 5-6: FB CONFIGURING RIPPLE CURRENT AND VOLTAGE RATINGS RFB2 VIN = IL(pk) ESRCIN VREF The input capacitor must be rated for the input current ripple. The RMS value of input capacitor current is determined at the maximum output current. Assuming the peak-to-peak inductor current ripple is low: EQUATION 5-7: RMS VALUE OF INPUT CAPACITOR CURRENT FIGURE 5-3: Configuration. Voltage/Divider ICIN(RMS) IOUT(MAX)D(1 – D) Where: D = Duty cycle DS20005607A-page 20 2017 Microchip Technology Inc. MIC45212-1/-2 The output voltage is determined by Equation 5-10: The applications are divided into two situations according to the amount of the feedback voltage ripple: EQUATION 5-10: 1. OUTPUT VOLTAGE DETERMINATION Enough ripple at the feedback voltage due to the large ESR of the output capacitors: As shown in Figure 5-4, the converter is stable without any ripple injection. RFB1 VOUT = VFB 1 + RFB2 Where: VFB = 0.8V VOUT RFB1 A typical value of RFB1 used on the standard evaluation board is 10 k. If RFB1 is too large, it may allow noise to be introduced into the voltage feedback loop. If RFB1 is too small in value, it will decrease the efficiency of the power supply, especially at light loads. Once RFB1 is selected, RFB2 can be calculated using Equation 5-11: EQUATION 5-11: CALCULATING RFB2 RFB2 = VFB RFB1 VOUT – VFB MIC45212 5.5 FIGURE 5-4: ESR. Enough Ripple at FB from The feedback voltage ripple is: EQUATION 5-12: VFB(PP) RFB2 VOUT OPEN 0.8V 40.2 k 1.0V 20 k 1.2V 11.5 k 1.5V 8.06 k 1.8V 4.75 k 2.5V 3.24 k 3.3V 1.91 k 5.0V Ripple Injection The VFB ripple required for proper operation of the MIC45212 gM amplifier and error comparator is 20 mV to 100 mV. However, the output voltage ripple is generally too small to provide enough ripple amplitude at the FB pin and this issue is more visible in lower output voltage applications. If the feedback voltage ripple is so small that the gM amplifier and error comparator cannot sense it, then the MIC45212 will lose control and the output voltage is not regulated. In order to have some amount of VFB ripple, a ripple injection method is applied for low output voltage ripple applications. FEEDBACK VOLTAGE RIPPLE RFB2 RFB1 RFB2 ESRCOUT IL(PP) Where: VOUT PROGRAMMING RESISTOR LOOK-UP 2017 Microchip Technology Inc. COUT ESR RFB2 For fixed RFB1 = 10 k, the output voltage can be selected by RFB2. Table 5-1 provides RFB2 values for some common output voltages. TABLE 5-1: FB IL(PP) = The peak-to-peak value of the inductor current ripple 2. There is virtually inadequate or no ripple at the FB pin voltage due to the very low-ESR of the output capacitors; such is the case with the ceramic output capacitor. In this case, the VFB ripple waveform needs to be generated by injecting a suitable signal. MIC45212 has provisions to enable an internal series RC injection network, RINJ and CINJ, as shown in Figure 5-5, by connecting RIB to the FB pin. This network injects a square wave current waveform into the FB pin, which by means of integration across the capacitor (C14), generates an appropriate sawtooth FB ripple waveform. VOUT MIC45212 FB RFB1 C14 COUT RIB RINJ CINJ RIA RFB2 ESR SW FIGURE 5-5: FB via RIB Pin. Internal Ripple Injection at DS20005607A-page 21 MIC45212-1/-2 The injected ripple is: EQUATION 5-13: INJECTED RIPPLE VFB(PP) VIN Kdiv D (1 – D) Kdiv = RFB1//RFB2 RINJ + RFB1//RFB2 Where: VIN = Power stage input voltage D = Duty cycle fSW = Switching frequency 1 fSW In Equation 5-13 and Equation 5-14, it is assumed that the time constant associated with C14 must be much greater than the switching period: EQUATION 5-14: CONDITION ON TIME CONSTANT OF C14 1 T = <<1 fSW If the voltage divider resistors, RFB1 and RFB2, are in the k range, then a C14 of 1 nF to 100 nF can easily satisfy the large time constant requirements. = (RFB1//RFB2//RINJ) C14 RINJ = 10 k CINJ = 0.1 µF DS20005607A-page 22 2017 Microchip Technology Inc. MIC45212-1/-2 5.6 Thermal Measurements and Safe Operating Area (SOA) Measuring the IC’s case temperature is recommended to ensure it is within its operating limits. Although this might seem like a very elementary task, it is easy to get erroneous results. The most common mistake is to use the standard thermal couple that comes with a thermal meter. This thermal couple wire gauge is large, typically 22 gauge, and behaves like a heat sink, resulting in a lower case measurement. Two methods of temperature measurement are using a smaller thermal couple wire or an infrared thermometer. If a thermal couple wire is used, it must be constructed of 36-gauge wire or higher (smaller wire size) to minimize the wire heat sinking effect. In addition, the thermal couple tip must be covered in either thermal grease or thermal glue to make sure that the thermal couple junction is making good contact with the case of the IC. Omega® Engineering brand thermal couple (5SC-TT-K-36-36) is adequate for most applications. FIGURE 5-6: MIC45212 Power Derating vs. Airflow (5 VIN to 1.5 VOUT). Wherever possible, an infrared thermometer is recommended. The measurement spot size of most infrared thermometers is too large for an accurate reading on a small form factor IC. However, an IR thermometer from Optris® has a 1 mm spot size, which makes it a good choice for measuring the hottest point on the case. An optional stand makes it easy to hold the beam on the IC for long periods of time. The Safe Operating Area (SOA) of the MIC45212 is shown in Figure 5-6 through Figure 5-10. These thermal measurements were taken on the MIC45212 evaluation board. Since the MIC45212 is an entire system comprised of a switching regulator controller, MOSFETs and inductor, the part needs to be considered as a system. The SOA curves will give guidance to reasonable use of the MIC45212. FIGURE 5-7: MIC45212 Power Derating vs. Airflow (12 VIN to 1.5 VOUT). SOA curves should only be used as a point of reference. SOA data was acquired using the MIC45212 evaluation board. Thermal performance depends on the PCB layout, board size, copper thickness, number of thermal vias and actual airflow. FIGURE 5-8: MIC45212 Power Derating vs. Airflow (12 VIN to 3.3 VOUT). 2017 Microchip Technology Inc. DS20005607A-page 23 MIC45212-1/-2 FIGURE 5-9: MIC45212 Power Derating vs. Airflow (24 VIN to 1.5 VOUT). DS20005607A-page 24 FIGURE 5-10: MIC45212 Power Derating vs. Airflow (24 VIN to 3.3 VOUT). 2017 Microchip Technology Inc. MIC45212-1/-2 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 64-Lead 12 mm x 12 mm B2QFN MIC XXXXX-XXXX WNNN 64-Lead 12 mm x 12 mm B2QFN MIC XXXXX-XXXX WNNN Legend: XX...X Y YY WW NNN e3 * Example MIC 45212-1YMP 1256 Example MIC 45212-2YMP 1256 Product code or customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. ●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (⎯) symbol may not be to scale. 2017 Microchip Technology Inc. DS20005607A-page 25 MIC45212-1/-2 6.2 Package Details The following sections give the technical details of the package. Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DRAWING # B2QFN1212-64LD-PL-1 Lead Frame Copper DS20005607A-page 26 UNIT MM Lead Finish Matte Tin 2017 Microchip Technology Inc. MIC45212-1/-2 2017 Microchip Technology Inc. DS20005607A-page 27 MIC45212-1/-2 DS20005607A-page 28 2017 Microchip Technology Inc. MIC45212-1/-2 6.3 Note: Thermally Enhanced Landing Pattern For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. 2017 Microchip Technology Inc. DS20005607A-page 29 MIC45212-1/-2 6.3 Note: Thermally Enhanced Landing Pattern (Continued) For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20005607A-page 30 2017 Microchip Technology Inc. MIC45212-1/-2 APPENDIX A: REVISION HISTORY Revision A (November 2017) • Converted Micrel document MIC45212-1/-2 to Microchip data sheet DS20005607A. • Minor text changes throughout document. 2017 Microchip Technology Inc. DS20005607A-page 31 MIC45212-1/-2 NOTES: DS20005607A-page 32 2017 Microchip Technology Inc. MIC45212-1/-2 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. Device – XXX – X Option Package XX Media Type Examples: a) MIC45212-1YMP-T1: MIC45212, HLL, 64-Pin B2QFN, 100/Reel b) MIC45212-1YMP-TR: MIC45212, HLL, 64-Pin B2QFN, 750/Reel Device: MIC45212: Option: 1 2 26V, 14A DC-to-DC Power Module c) MIC45212-2YMP-T1: MIC45212,HSC, 64-Pin B2QFN, 100/Reel = = HLL HSC Package: YMP = 64-Pin 12 mm x 12 mm B2QFN Media Type: T1 TR 100/Reel 750/Reel = = 2017 Microchip Technology Inc. d) MIC45212-2YMP-TR: MIC45212,HSC, 64-Pin B2QFN, 750/Reel DS20005607A-page 33 MIC45212-1/-2 NOTES: DS20005607A-page 34 2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2360-7 == ISO/TS 16949 == 2017 Microchip Technology Inc. DS20005607A-page 35 NOTES: DS20005607A-page 36 2017 Microchip Technology Inc. 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