BYT60P-1000 BYT261PIV-1000 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF(AV) 2 x 60 A VRRM 1000 V VF (max) trr (max) 1.8 V 70 ns K2 A2 K1 A1 BYT261PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance< 5 nH ISOTOPTM (Plastic) DESCRIPTION Dual or high single voltage rectifier devices suited for Switch Mode Power Supplies and other power converters. These devices are packaged in ISOTOP or in SOD93. A K SOD93 (Plastic) ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Repetitive peak forward current tp=5 µs F=1kHz RMS forward current ISOTOP Average forward current SOD93 Tc = 50°C δ = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Value 1000 Unit V 1000 140 A A 100 ISOTOP Tc = 60°C SOD93 tp = 10 ms Sinusoidal 60 A 60 400 - 40 to + 150 A °C 150 °C TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 4B 1/7 BYT60P-1000 / BYT261PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Value 0.8 0.45 ISOTOP Per diode Total SOD93 Total 0.7 Coupling 0.1 Rth(c) Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameter Test Conditions Forward voltage drop Tj = 25°C Min. Typ. IF = 60 A Reverse leakage current Tj = 25°C Unit V 1.8 Tj = 100°C IR ** Max. 1.9 VR = VRRM Tj = 100°C 100 µA 6 mA Max. 170 Unit ns Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.005 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C Min. IF = 1A VR = 30V dIF/dt = - 15A/µs Typ. 70 IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM C= 2/7 VRP VCC Parameter Test Conditions Ma ximu m rev erse reco ve ry time dIF/dt = - 240 A/µs dIF/dt = - 480 A/µs Ma ximu m rev erse reco ve ry current dIF/dt = - 240 A/µs Turn-off overvoltage coefficient Tj = 100°C VCC = 200V IF = IF(AV) dIF/dt = - 60A/µs Lp = 2.5µH (see fig. 14) dIF/dt = - 480 A/µs VCC = 200 V IF = 60 A Lp ≤ 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 200 ns 120 40 A 4.5 / 44 3.3 BYT60P-1000 / BYT261PIV-1000 Fig. 1-1: Average forward power dissipation versus average forward current (per diode, ISOTOP). Fig. 1-2: Average forward power dissipation versus average forward current (SOD93). PF(av)(W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 PF(av)(W) δ = 0.1 δ = 0.2 130 120 110 100 90 80 70 60 50 40 30 20 10 0 δ = 0.5 δ = 0.05 δ=1 T δ=tp/T IF(av) (A) 0 10 20 30 40 50 tp 60 70 Fig. 2-1: Peak current versus form factor (per diode, ISOTOP). δ = 0.5 δ=1 δ = 0.05 T δ=tp/T IF(av) (A) 0 10 20 30 40 50 tp 60 70 IM(A) 500 450 400 350 300 250 200 150 100 50 0 0.0 T δ=tp/T P=70W tp P=40W P=100W P=20W 0.1 δ = 0.2 Fig. 2-2: Peak current versus form factor (SOD93). IM(A) 500 450 400 350 300 250 200 150 100 50 0 0.0 δ = 0.1 δ 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T P=70W δ=tp/T tp P=40W P=100W P=20W 0.1 δ 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode for ISOTOP). IF(av)(A) 70 Rth(j-a)=Rth(j-c) 60 SOD93 50 ISOTOP 40 30 Rth(j-a)=2.5°C/W 20 T 10 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 3/7 BYT60P-1000 / BYT261PIV-1000 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, ISOTOP). IM(A) IM(A) 400 400 350 350 300 300 250 250 200 200 Tc=25°C 150 Tc=25°C 150 100 100 Tc=60°C IM 50 t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode, ISOTOP). t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (SOD93). K=[Zth(j-c)/Rth(j-c)] K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 Tc=50°C IM 50 t 1.0 δ = 0.5 δ = 0.5 0.5 δ = 0.2 δ = 0.2 δ = 0.1 0.2 T δ = 0.1 T 0.2 Single pulse Single pulse 0.1 1E-3 δ=tp/T tp(s) 1E-2 1E-1 δ=tp/T tp(s) tp 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode for ISOTOP). 0.1 1E-3 1E-2 tp 1E-1 1E+0 Fig. 7: Junctioncapacitance versus reverse voltage applied(typical values, per diode for ISOTOP). IFM(A) C(pF) 500 100 F=1MHz Tj=25°C Typical values Tj=100°C 80 100 60 Tj=25°C 10 40 Tj=100°C 20 1 0.0 4/7 VR(V) VFM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 10 100 200 BYT60P-1000 / BYT261PIV-1000 Fig. 8: Recovery charges versus dIF/dt (per diode for ISOTOP). Fig. 9: Recovery current versus dIF/dt (per diode for ISOTOP). Qrr(µC) IRM(A) 10 80 IF=IF(av) 90% confidence Tj=100°C 8 IF=IF(av) 90% confidence Tj=100°C 70 60 6 50 40 4 30 2 20 dIF/dt(A/µs) 0 10 20 50 10 100 200 500 Fig. 10: Transient peak forward voltage versus dIF/dt (per diode for ISOTOP). 20 50 100 200 500 Fig. 11: Forward recovery time versus dIF/dt (per diode for ISOTOP). VFP(V) 45 40 35 30 25 20 15 10 5 0 dIF/dt(A/µs) 0 10 tfr(µs) 1.50 IF=IF(av) 90% confidence Tj=100°C IF=IF(av) 90% confidence Tj=100°C 1.25 1.00 0.75 0.50 0.25 dIF/dt(A/µs) 0 100 200 dIF/dt(A/µs) 300 400 500 0.00 0 100 200 300 400 500 Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] 1.50 1.25 1.00 IRM 0.75 Qrr 0.50 Tj(°C) 0.25 0 25 50 75 100 125 150 5/7 BYT60P-1000 / BYT261PIV-1000 Fig. 13: Turn-off switching characteristics (without serie inductance). Fig. 14: Turn-off switching characteristics (with serie inductance). IF IF DUT DUT diF/dt LC diF/dt LC LP VCC VF VCC VF VCC VRP I RM VCC tI RM PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS 6/7 REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 BYT60P-1000 / BYT261PIV-1000 PACKAGE MECHANICAL DATA SOD93 Plastic REF. DIMENSIONS Millimeters Inches Min. Typ. Max. Min. 4.70 4.90 0.185 1.17 1.37 0.046 2.50 1.27 0.50 0.78 0.020 1.10 1.30 0.043 1.75 10.80 11.10 0.425 14.70 15.20 0.578 12.20 16.20 18.0 3.95 4.15 0.156 31.00 4.00 4.10 0.157 A C D D1 E F F3 G H L L2 L3 L5 L6 O Typ. Max. 0.193 0.054 0.098 0.050 0.031 0.051 0.069 0.437 0.598 0.480 0.638 0.709 0.163 1.220 0.161 Ordering type Marking Package Weight Base qty Delivery mode BYT60P-1000 BYT60P-1000 SOD93 3.79 g. 30 Tube ISOTOP 28 g. (without screws) 10 Tube BYT261PIV-1000 BYT261PIV-1000 Cooling method: by conduction (C) Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Recommended torque value (SOD93): 0.8 N.m. Maximum torque value (SOD93): 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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