CY62177EV18 MoBL® 32-Mbit (2 M × 16 / 4 M × 8) Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description ■ Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns ■ Wide voltage range ❐ 1.65 V to 2.25 V ■ Ultra low standby power ❐ Typical standby current: 3 A ❐ Maximum standby current: 25 A ■ Ultra low active power ❐ Typical active current: 4.5 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE Features The CY62177EV18 is a high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL®) in portable applications, such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 48-ball TSOP I and 48-ball FBGA package To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A20). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written to the location specified on the address pins (A0 through A20). To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. Pin #13 of the 48 TSOP I package is an DNU pin that must be left floating at all times to ensure proper application. For a complete list of related documentation, click here. Logic Block Diagram 2M × 16 RAM Array SENSE AMPS ROW DECODER DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BYTE A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 BHE WE CE2 CE1 OE BLE Power-Down Circuit Cypress Semiconductor Corporation Document Number: 001-76091 Rev. *C • 198 Champion Court BHE BLE • CE2 CE1 San Jose, CA 95134-1709 • 408-943-2600 Revised November 28, 2014 CY62177EV18 MoBL® Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 5 Thermal Resistance .......................................................... 5 AC Test Loads and Waveforms ....................................... 5 Data Retention Characteristics ....................................... 6 Data Retention Waveform ................................................ 6 Switching Characteristics ................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 11 Document Number: 001-76091 Rev. *C Ordering Information ...................................................... 12 Ordering Code Definitions ......................................... 12 Package Diagrams .......................................................... 13 Acronyms ........................................................................ 15 Document Conventions ................................................. 15 Units of Measure ....................................................... 15 Document History Page ................................................. 16 Sales, Solutions, and Legal Information ...................... 17 Worldwide Sales and Design Support ....................... 17 Products .................................................................... 17 PSoC® Solutions ...................................................... 17 Cypress Developer Community ................................. 17 Technical Support ..................................................... 17 Page 2 of 17 CY62177EV18 MoBL® Pin Configuration Figure 1. 48-pin TSOP I pinout (Front View) [1, 2] A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE CE2 DNU BHE BLE A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE Vss I/O15/A21 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 Vcc I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE Vss CE1 A0 Figure 2. 48-ball FBGA pinout (Top View) 1 2 3 4 5 6 BLE OE A0 A1 A2 CE2 A I/O8 BHE A3 A4 CE1 I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 A17 A7 I/O3 Vcc D VCC I/O12 NC A16 I/O4 Vss E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 A19 A12 A13 WE I/O7 G A18 A8 A9 A10 A11 A20 H Product Portfolio Power Dissipation VCC Range (V) Product CY62177EV18LL Speed (ns) Operating ICC (mA) f = 1 MHz Min Typ[3] Max 1.65 1.8 2.25 70 Standby ISB2 (A) f = fMax Typ[3] Max Typ[3] Max Typ[3] Max 4.5 5.5 35 45 3 25 Notes 1. DNU Pin# 13 needs to be left floating to ensure proper application. 2. The BYTE pin in the 48-TSOP I package has to be tied to VCC to use the device as a 2 M × 16 SRAM. The 48-pin TSOP I package can also be used as a 4 M × 8 SRAM by tying the BYTE signal to VSS. In the 4 M × 8 configuration, Pin 45 is A21, while BHE, BLE, and I/O8 to I/O14 pins are not used. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. Document Number: 001-76091 Rev. *C Page 3 of 17 CY62177EV18 MoBL® DC input voltage [4, 5] .................... –0.2 V to VCC(max) + 0.2 V Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied .......................................... –55 °C to +125 °C Output current into outputs (LOW) ............................. 20 mA Static discharge voltage (per MIL-STD-883, method 3015) ......................... > 2001 V Latch up current ..................................................... > 200 mA Operating Range Supply voltage to ground potential ....................................... –0.2 V to VCC(max) + 0.2 V DC voltage applied to outputs in High Z state [4, 5] ....................... –0.2 V to VCC(max) + 0.2 V Device Range Ambient Temperature VCC[6] CY62177EV18LL Industrial –40 °C to +85 °C 1.65 V to 2.25 V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 70 ns Min Typ [7] Max Unit VOH Output HIGH voltage IOH = –0.1 mA VCC = 1.65 V 1.4 – – V VOL Output LOW voltage IOL = 0.1 mA VCC = 1.65 V – – 0.2 V VIH Input HIGH voltage VCC = 1.65 V to 2.25 V 1.4 – VCC + 0.2 V V VIL[8] Input LOW voltage VCC = 1.65 V to 2.25 V –0.2 – 0.4 V IIX Input leakage current GND < VI < VCC –1 – +1 A IOZ Output leakage current GND < VO < VCC, Output Disabled –1 – +1 A ICC VCC operating supply current f = fMax = 1/tRC VCC = VCC(max) IOUT = 0 mA CMOS levels – 35 45 mA – 4.5 5.5 mA CE1 > VCC – 0.2 V or CE2 < 0.2 V or – 3 25 A f = 1 MHz ISB2 [9, 10] Automatic CE power down current – CMOS inputs (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) Notes 4. VIL(min) = –2.0 V for pulse durations less than 20 ns. 5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 6. Full Device AC operation assumes a 100 s ramp time from 0 to VCC (min) and 200 s wait time after VCC stabilization. 7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 8. Under DC conditions the device meets a VIL of 0.8 V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7 V. 9. The BYTE pin in the 48-TSOP I package has to be tied to VCC to use the device as a 2 M × 16 SRAM. The 48-TSOP I package can also be used as a 4 M × 8 SRAM by tying the BYTE signal to VSS. In the 4 M × 8 configuration, Pin 45 is A21, while BHE, BLE, and I/O8 to I/O14 pins are not used. 10. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. Document Number: 001-76091 Rev. *C Page 4 of 17 CY62177EV18 MoBL® Capacitance Parameter [11] Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Max Unit 15 pF 15 pF Thermal Resistance Parameter [11] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions FBGA TSOPI Unit Still air, soldered on a 3 × 4.5 inch, 2-layer printed circuit board 38.10 44.66 C/W 7.54 12.12 C/W AC Test Loads and Waveforms R1 VCC OUTPUT 30 pF INCLUDING JIG AND SCOPE Figure 3. AC Test Loads and Waveforms ALL INPUT PULSES VCC 90% 90% 10% 10% GND Fall Time = 1 V/ns R2 Rise Time = 1 V/ns Equivalent to: THEVENIN EQUIVALENT OUTPUT RTH V Table 1. AC Test Loads Parameters Value Unit R1 13500 R2 10800 RTH 6000 VTH 0.80 V Note 11. Tested initially and after any design or process changes that may affect these parameters. Document Number: 001-76091 Rev. *C Page 5 of 17 CY62177EV18 MoBL® Data Retention Characteristics Over the Operating Range Parameter Description VDR VCC for data retention ICCDR [13] Data retention current Conditions VCC = 1.0 V, Min Typ [12] Max Unit 1.0 – – V – – 17 A CE1 > VCC – 0.2 V or CE2 < 0.2 V, or (BHE and BLE) > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V tCDR[14] Chip deselect to data retention time 0 – – ns tR[15] Operation recovery time 70 – – ns Data Retention Waveform Figure 4. Data Retention Waveform [16] VCC VCC(min) tCDR DATA RETENTION MODE VDR > 1.0 V VCC(min) tR CE1 or BHE.BLE or CE2 Notes 12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 13. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 14. Tested initially and after any design or process changes that may affect these parameters. 15. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s. 16. BHE.BLE is the AND of both BHE and BLE. Chip is deselected by either disabling the chip enable signals or by disabling both BHE and BLE. Document Number: 001-76091 Rev. *C Page 6 of 17 CY62177EV18 MoBL® Switching Characteristics Over the Operating Range Parameter [17, 18] Description 70 ns Min Max Unit Read Cycle tRC Read cycle time 70 – ns tAA Address to data valid – 70 ns tOHA Data hold from address change 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 70 ns tDOE OE LOW to data valid – 35 ns [19] 5 – ns – 25 ns tLZOE tHZOE OE LOW to LOW Z OE HIGH to High Z[19, 20] Z[19] tLZCE CE1 LOW and CE2 HIGH to Low 10 – ns tHZCE CE1 HIGH and CE2 LOW to High Z[19, 20] – 25 ns tPU CE1 LOW and CE2 HIGH to power up 0 – ns tPD CE1 HIGH and CE2 LOW to power down – 70 ns tDBE BLE/BHE LOW to data valid – 70 ns tLZBE BLE/BHE LOW to Low Z [19] 10 – ns – 25 ns tHZBE Write Cycle BLE/BHE HIGH to HIGH Z [19, 20] [21, 22] tWC Write cycle time 70 – ns tSCE CE1 LOW and CE2 HIGH to write end 60 – ns tAW Address setup to write end 60 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE pulse width 45 – ns tBW BLE/BHE LOW to write end 60 – ns tSD Data setup to write end 30 – ns tHD Data hold from Write End 0 – ns tHZWE WE LOW to High Z[19, 20] – 25 ns 10 – ns tLZWE [19] WE HIGH to Low Z Notes 17. Test conditions for all parameters other than tristate parameters assume signal transition time of 1 V/ns, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in Table 1 on page 5. 18. In an earlier revision of this device, under a specific application condition, READ and WRITE operations were limited to switching of the byte enable and/or chip enable signals as described in the Application Notes AN13842 and AN66311. However, the issue has been fixed and in production now, and hence, these Application Notes are no longer applicable. They are available for download on our website as they contain information on the date code of the parts, beyond which the fix has been in production. 19. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 20. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state. 21. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 22. The minimum write cycle pulse width for Write Cycle No. 3 (WE controlled, OE LOW) should be equal to the sum of tSD and tHZWE. Document Number: 001-76091 Rev. *C Page 7 of 17 CY62177EV18 MoBL® Switching Waveforms Figure 5. Read Cycle 1 (Address Transition Controlled) [23, 24] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 6. Read Cycle 2 (OE Controlled) [24, 25] ADDRESS tRC CE1 tPD tHZCE CE2 tACE BHE/BLE tLZBE tDBE tHZBE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU ICC 50% 50% ISB Notes 23. The device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. 24. WE is HIGH for read cycle. 25. Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2 transition HIGH. Document Number: 001-76091 Rev. *C Page 8 of 17 CY62177EV18 MoBL® Switching Waveforms (continued) Figure 7. Write Cycle 1 (WE Controlled) [26, 27, 28, 29] tWC ADDRESS tSCE CE1 CE2 tAW tHA tSA tPWE WE tBW BHE/BLE OE tSD DATA I/O tHD VALID DATA NOTE 29 tHZOE Figure 8. Write Cycle 2 (CE1 or CE2 Controlled) [26, 27, 28, 29] tWC ADDRESS tSCE CE1 CE2 tSA tAW tHA tPWE WE tBW BHE/BLE OE tSD DATA I/O tHD VALID DATA NOTE 29 tHZOE Notes 26. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 27. Data I/O is high impedance if OE = VIH. 28. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state. 29. During this period the I/Os are in output state and input signals should not be applied. Document Number: 001-76091 Rev. *C Page 9 of 17 CY62177EV18 MoBL® Switching Waveforms (continued) Figure 9. Write Cycle 3 (WE Controlled, OE LOW) [30, 31, 32] tWC ADDRESS tSCE CE1 CE2 tBW BHE/BLE tAW tHA tSA WE tPWE tSD DATA I/O NOTE 31 tHD VALID DATA tLZWE tHZWE Figure 10. Write Cycle 4 (BHE/BLE Controlled, OE LOW) [30, 32] tWC ADDRESS CE1 CE2 tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD DATA I/O NOTE 31 tHD VALID DATA Notes 30. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high-impedance state. 31. During this period the I/Os are in output state and input signals should not be applied. 32. The minimum write cycle pulse width should be equal to the sum of tSD and tHZWE. Document Number: 001-76091 Rev. *C Page 10 of 17 CY62177EV18 MoBL® Truth Table CE1 H CE2 WE OE BHE BLE [33] X X X X X X[33] Inputs Outputs Mode Power High Z Deselect/Power Down Standby (ISB) L X X X X High Z Deselect/Power Down Standby (ISB) [33] X X H H High Z Deselect/Power Down Standby (ISB) L H H L L L Data Out (I/O0–I/O15) Read Active (ICC) L H H L H L High Z (I/O8–I/O15); Data Out (I/O0–I/O7) Read Active (ICC) L H H L L H Data Out (I/O8–I/O15); High Z (I/O0–I/O7) Read Active (ICC) L H L X L L Data In (I/O0–I/O15) Write Active (ICC) L H L X H L High Z (I/O8–I/O15); Data In (I/O0–I/O7) Write Active (ICC) L H L X L H Data In (I/O8–I/O15); High Z (I/O0–I/O7) Write Active (ICC) L H H H L H High Z Output Disabled Active (ICC) L H H H H L High Z Output Disabled Active (ICC) L H H H L L High Z Output Disabled Active (ICC) [33] X X Note 33. The ‘X’ (Don’t care) state for the chip enables in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted. Document Number: 001-76091 Rev. *C Page 11 of 17 CY62177EV18 MoBL® Ordering Information Speed (ns) 70 Ordering Code CY62177EV18LL-70BAXI Package Diagram 51-85191 Package Type 48 ball FBGA (8 × 9.5 × 1.2 mm) Pb-free Operating Range Industrial Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions CY 621 7 7 E V18 LL - 70 Z,BA X I Temperature Grade: I = Industrial X = Pb-free Package Type: Z = 48TSOP I, BA = 48 ball FBGA Speed Grade: 70 ns Low Power Voltage Range: V18 = 1.8 V (typical) Process Technology: E = 90 nm Bus Width = × 16 Density = 32-Mbit 621 = MoBL SRAM family Company ID: CY = Cypress Document Number: 001-76091 Rev. *C Page 12 of 17 CY62177EV18 MoBL® Package Diagrams Figure 11. 48-ball FBGA (8 × 9.5 × 1.2 mm) Package Outline, 51-85191 51-85191 *C Document Number: 001-76091 Rev. *C Page 13 of 17 CY62177EV18 MoBL® Package Diagrams (continued) Figure 12. 48-pin TSOP I (12 × 18.4 × 1.0 mm) Package Outline, 51-85183 51-85183 *C Document Number: 001-76091 Rev. *C Page 14 of 17 CY62177EV18 MoBL® Acronyms Acronym Document Conventions Description Units of Measure BHE Byte High Enable BLE Byte Low Enable °C degree Celsius CE Chip Enable MHz megahertz CMOS Complementary Metal Oxide Semiconductor µA microampere I/O Input/Output mA milliampere OE Output Enable ms millisecond ns nanosecond SRAM Static Random Access Memory TSOP Thin Small Outline Package WE Write Enable Document Number: 001-76091 Rev. *C Symbol Unit of Measure ohm % percent pF picofarad ps picosecond V volt W watt Page 15 of 17 CY62177EV18 MoBL® Document History Page Document Title: CY62177EV18 MoBL®, 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Document Number: 001-76091 Revision ECN Orig. of Change Submission Date ** 3528465 AJU 02/17/2012 New data sheet. *A 4116295 MEMJ 09/10/2013 Changed status from Preliminary to Final. Updated Features: Added 48-ball FBGA package related information. Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85191 – Changed revision from *B to *C. Updated in new template. *B 4301112 NILE 03/07/2014 Updated Switching Characteristics: Added Note 18 and referred the same note in “Parameter” column. Completing Sunset Review. *C 4571881 NILE 11/28/2014 Added related documentation hyperlink in page 1. Added Note 22 in Switching Characteristics. Added note reference 22 in the Switching Characteristics table. Added Note 32 in Switching Waveforms. Added note reference 32 in Figure 9. Document Number: 001-76091 Rev. *C Description of Change Page 16 of 17 CY62177EV18 MoBL® Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training cypress.com/go/plc Memory PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/psoc Technical Support cypress.com/go/support cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2012-2014. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-76091 Rev. *C Revised November 28, 2014 Page 17 of 17 MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective holders.