SeCoS BCP3669 Npn plastic-encapsulate transistor Datasheet

BCP3669
2 A , 80 V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
oHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
Large Current Capacity.
High DC Current Gain
SOT-89
4
1
2
3
A
APPLICATION
E
LF Amplifiers, Various Drivers, Muting Circuit
C
B
D
F
G
H
MARKING
K
J
3669
REF.
Date Code
A
B
C
D
E
F
Collector
2
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-89
1K
7 inch
1
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
L
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
80
80
5
2
1
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
1
Collector-emitter saturation voltage
1
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
80
80
5
-
-
1
1
0.5
1.2
V
V
V
µA
µA
V
V
100
30
0.2
1
240
-
0.2
-
DC Current Gain
hFE
Transition Frequency
Collector Output Capacitance
Turn on
Storage time
fT
Cob
TON
TSTG
180
40
-
Tf
-
1
Fall time
MHz
pF
µS
Test condition
IC=100µA, IE=0
IC=100µA, IB=0
IE=100µA, IC=0
VCB=80V, IE=0
VBE=5V, IC=0
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
VCE=2V, IC=500mA
VCB=10V, f=1MHz
VCC=30V, RL=30Ω,
IC=1A,
IB1= -IB1=50mA
Duty Cycle≦1%
Note:
1. Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
27-Oct-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
BCP3669
Elektronische Bauelemente
2 A , 80 V
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
27-Oct-2014 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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