AO4421 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4421 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4421L is a Green Product ordering option. AO4421 and AO4421L are electrically identical. VDS (V) = -60V ID = -6.2 A (VGS = -10V) RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 50mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -40 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -6.2 TA=25°C Power Dissipation A Maximum -60 RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W AO4421, AO4421L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Conditions Min ID=-250µA, VGS=0V VDS=-48V, VGS=0V -60 VDS=0V, VGS=±20V VDS=VGS ID=-250µA -1 VGS=-10V, VDS=-5V VGS=-10V, ID=-6.2A Static Drain-Source On-Resistance TJ=125°C Output Capacitance VGS=0V, VDS=-30V, f=1MHz Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz Qgd tD(on) Gate Drain Charge Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units V µA ±100 nA -2 -3 V 32 53 40 70 mΩ 40 50 mΩ -1 -4.2 S V A -40 VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Max -1 -5 TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Typ VGS=-10V, VDS=-30V, ID=-6.2A VGS=-10V, VDS=-30V, RL=4.7Ω, RGEN=3Ω IF=-6.2A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/µs A 18 -0.74 2417 179 120 1.9 2900 2.3 pF pF pF Ω 46.5 55 nC 22.7 nC 9.1 9.2 nC nC 9.8 6.1 44 12.7 34 47 ns ns ns ns 42 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4421, AO4421L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -4.5V -5V 20 -3.5V -6V 20 15 -ID(A) -ID (A) VDS=-5V 25 10 15 10 125°C VGS=-3V 5 5 25°C 0 0 0 1 2 3 4 5 1 1.5 45 Normalized On-Resistance RDS(ON) (mΩ) 2.5 3 3.5 4 2.00 VGS=-4.5V 40 35 VGS=-10V VGS=-10V ID=-6.2A 1.80 1.60 VGS=-4.5V ID=-5A 1.40 1.20 1.00 0.80 30 0 5 10 15 0 20 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-6.2A 80 1.0E+00 125°C 1.0E-01 70 125°C 60 1.0E-02 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 1.0E-03 50 1.0E-04 25°C 40 1.0E-05 25°C 30 1.0E-06 20 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4421, AO4421L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-6.2A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1ms 0.1s 10µs 50 60 30 Power (W) -ID (Amps) 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10ms 1s 20 10 10s DC 0.1 0.1 30 40 TJ(Max)=150°C, TA=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000