BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Flat lead SOD-323 small outline plastic package A 1.15 1.35 0.045 0.053 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 2.30 2.70 0.091 0.106 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260 °C/10s D 1.60 1.80 0.063 0.071 Polarity : Indicated by cathode band E 0.80 1.00 0.031 0.039 Weight : 4.02±0.5 mg F 0.05 0.20 0.002 0.008 Ordering Information Part No. Package Packing BZT52CxxS RR SOD-323F 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Symbol Value Units PD 200 mW Forward Voltage IF=10mA VF 1 V Thermal Resistance (Junction to Ambient) (Note 1) RθJA 625 °C/W TJ, TSTG -65 to + 150 °C Junction and Storage Temperature Range Notes:1. Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics Current IF VZM VZ VBR VR IR IZK VF Voltage IZT IZM BreakdownRegion Leakage Region Forward Region VBR : Voltage at I ZK IZK : Test current for voltage V BR ZZK : Dynamic impedance at I ZK IZT : Test current for voltage V Z VZ : Voltage at current I ZT ZZT : Dynamic impedance at I ZT IZM : Maximum steady state current VZM : Voltage at I ZM Version : C09 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25°C unless otherwise noted VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers VZ @ IZT (Volt) IZT(mA) ZZT @ IZT(Ω) Max IZK(mA) 2.52 5 100 1 564 45 2.84 5 100 1 564 18 1 3.0 3.15 5 100 1 564 9 1 3.14 3.3 3.47 5 95 1 564 4.5 1 BZT52C3V6S 3.42 3.6 3.78 5 90 1 564 4.5 1 BZT52C3V9S 3.71 3.9 4.10 5 90 1 564 2.7 1 BZT52C4V3S 4.09 4.3 4.52 5 90 1 564 2.7 1 BZT52C4V7S 4.47 4.7 4.94 5 80 1 470 2.7 2 BZT52C5V1S 4.85 5.1 5.36 5 60 1 451 1.8 2 BZT52C5V6S 5.32 5.6 5.88 5 40 1 376 0.9 2 BZT52C6V2S 5.89 6.2 6.51 5 10 1 141 2.7 4 BZT52C6V8S 6.46 6.8 7.14 5 15 1 75 1.8 4 BZT52C7V5S 7.11 7.5 7.86 5 15 1 75 0.9 5 BZT52C8V2S 7.79 8.2 8.61 5 15 1 75 0.63 5 BZT52C9V1S 8.65 9.1 9.56 5 15 1 94 0.45 6 BZT52C10S 9.50 10 10.50 5 20 1 141 0.18 7 BZT52C11S 10.45 11 11.55 5 20 1 141 0.09 8 BZT52C12S 11.40 12 12.60 5 25 1 141 0.09 8 BZT52C13S 12.35 13 13.65 5 30 1 160 0.09 8 BZT52C15S 14.25 15 15.75 5 30 1 188 0.045 10.5 BZT52C16S 15.20 16 16.80 5 40 1 188 0.045 11.2 BZT52C18S 17.10 18 18.90 5 45 1 212 0.045 12.6 BZT52C20S 19.00 20 21.00 5 55 1 212 0.045 14.0 BZT52C22S 20.90 22 23.10 5 55 1 235 0.045 15.4 Part Number Nom Min Max BZT52C2V4S 2.28 2.4 BZT52C2V7S 2.57 2.7 BZT52C3V0S 2.85 BZT52C3V3S ZZK @ IR @ VR(μ IZK(Ω) Max A) Max VR(V) 1 BZT52C24S 22.80 24 25.20 5 70 1 235 0.045 16.8 BZT52C27S 25.65 27 28.35 2 80 0.5 282 0.045 18.9 BZT52C30S 28.50 30 31.50 2 80 0.5 282 0.045 21.0 BZT52C33S 31.35 33 34.65 2 80 0.5 306 0.045 23.0 BZT52C36S 34.20 36 37.80 2 90 0.5 329 0.045 25.2 BZT52C39S 37.05 39 40.95 2 130 0.5 329 0.045 27.3 BZT52C43S 40.85 43 45.15 2 150 0.5 353 0.045 30.1 BZT52C47S 44.65 47 49.35 2 170 0.5 353 0.045 33.0 BZT52C51S 48.45 51 53.55 2 180 0.5 376 0.045 35.7 BZT52C56S 53.20 56 58.80 2 200 0.5 400 0.045 39.2 BZT52C62S 58.90 62 65.10 2 215 0.5 423 0.045 43.4 BZT52C68S 64.60 68 71.40 2 240 0.5 447 0.045 47.6 BZT52C75S 71.25 75 78.75 2 255 0.5 470 0.045 52.5 Notes: 1. The Zener Voltage (V Z) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK. Version : C09 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics FIG 1 Typical Forward Characteristics 100 Zener Current (mA) Forward Current (mA) 1000 100 Ta=25°C 10 Ta=25°C 10 1 0.10 1 0 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1 2 3 Forward Voltage (V) 6 7 8 9 10 11 12 FIG 4 Admissible Power Disspation Curve FIG 3 Zener Breakdown Characteristics 300 Power Dissipation (mW) 10 Zener Current (mA) 5 Zener Voltage (V) 100 1 0 250 200 150 100 50 0 0 15 25 35 45 55 65 0 75 50 100 150 200 Ambient Tempeture (°C) Zener Voltage (V) FIG 5 Typical Capacitance FIG 6 Effect of Zener Voltage on Impedence 1000 1000 100 Dynamic Impedence (Ώ) Capacitance(pF) 4 100 1V Bias Ta=150°C 10 Bias at 50% of VZ(Nom) Iz=1mA Ta=25°C Iz=5mA 10 Iz=20m 1 1 1 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version : C09