New Product ESH1B, ESH1C, ESH1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds AC/AC and DC/DC converters in high temperature conditions for both consumer applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V trr 25 ns MECHANICAL DATA VF 0.90 V TJ max. 175 °C Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code ESH1B ESH1C ESH1D EHB EHC EHD UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current at TL = 150 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 50 A TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number: 89401 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product ESH1B, ESH1C, ESH1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.7 A Maximum instantaneous forward voltage IF = 1 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage TA = 125 °C Maximum reverse current VR = 20 V, TJ = 150 °C Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 25 °C IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Typical reverse recovery time TJ = 100 °C TJ = 25 °C IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM Typical stored charge Typical junction capacitance TJ = 100 °C 4.0 V, 1 MHz SYMBOL VALUE VF (1) 0.87 VF 0.90 UNIT V 1.0 IR μA 25 IR 50 μA trr 25 ns 25 trr ns 35 10 Qrr nC 15 25 CJ pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ESH1C 85 RJL (1) 30 RJA Typical thermal resistance ESH1B (1) ESH1D UNIT °C/W Note Units mounted on PCB with 5.0 mm x 5.0 mm (0.013 mm thick) land areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ESH1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel ESH1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 TL Measured at the Cathode Band Terminal 0.4 0.2 40 30 20 10 0 0 95 105 115 125 135 145 155 165 175 Lead Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: Document Number: 89401 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product ESH1B, ESH1C, ESH1D Vishay General Semiconductor 100 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Reverse Leakage Current (µA) TJ = 175 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.001 20 1 40 60 80 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 3 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 TJ = 125 °C 10 TJ = 150 °C 1 TJ = 175 °C TJ = 25 °C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.01 1.4 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89401 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. 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