RoHS BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C 3 1 2 0.95 IC 0.95 R T Characteristic C 2.4 1.3 N O Symbol Test Condition Collector-Base Breakdown Voltage BC846 BC847 B C 848 V (BR)CBO I C =10 A, I E =0 BC846 C E L Collector-Emitter Breakdown Voltage BC847 V (BR)CEO I C =10 mA, I B =0 B C 848 Emitter-Base Breakdown Voltage Collector Cut-off Current E Collector Cut-off Current BC846 BC847 B C 848 BC846 BC847 B C 848 V (BR)EBO I E =1 A, I C =0 V CB =70V, I E =0 I CBO V CB =45V, I E =0 V CB =25V, I E =0 V CB =60V, I E =0 I CEO V CB =40V, I E =0 V CB =25V, I E =0 1.BASE 2.EMITTER 3.COLLECTOR 0.4 1. 2.9 1.9 Electrical Characteristics D T ,. L O SOT-23 Unit:mm 。 (Ta=25 C) Min. Typ. Max. Unit 80 50 30 65 45 30 V 5 V V 0.1 A 0.1 A 0.1 A I EBO V EB =5V, I C =0 H FE(1) V CE =5V, I C =2mA V CE(sat) I C =100mA, I B =5mA 0.5 V Base-emitter saturatio voltage V BE(sat) I C =100mA, I B =5mA 1 V Transition Frequency fT V CE =5V, I C =10mA ,f=100MHz Emitter Cut-off Current J E DC Current Gain (Note) Collector-Emitter Saturation Voltage W WEJ ELECTRONIC CO. BC846 BC847 B C 848 Http:// www.wej.cn 125 220 420 250 475 800 100 E-mail:[email protected] MHz RoHS BC846-BC848 BC847 BC848 2.0 -1.0 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 =10 -0.9 V,VOLTAGE(VOLTS) Vc E =-10V 。 Ta=25 C 1.5 -0.7 -0.6 V BE(on) @V CE =-10V -0.5 -0.4 -0.3 -0.2 V CE(sat) @I C /I B =10 -0.1 -50 -100 -200 I C -COLLECTOR CURRENT(mAdc) -0.5 -1.0 -2.0 -5.0 -10 -20 “Saturation”and“On”Voltage -2.0 。 -1.6 -1.2 -0.02 -0. 1 -1.0 -10 -20 R T I B，BASE CURRENT(mA) Collector Saturation Region BC846 C E L Vc E =-5.0V 。 Ta=25 C 2.0 1.0 0.5 0.2 -0.1 -0.2 E O 200 150 W -1.6 -50mA -100mA -200mA -0.8 -0.4 。 T J =25 C 0 -0.02 -0.05 -0. 1 -0.2 -0.5 -1.0 -2.0 -5.0 I B，BASE CURRENT(mA) -10 -20 Collector Saturation Region WEJ ELECTRONIC CO. 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 I C -COLLECTOR CURRENT(mAdc) Current-Gain-Bandwidth Pouduct 。 T J =25 C -0.8 V BE(sat) @ I C /I B =10 -0.6 V BE @V CE =-5.0V -0.4 -0.2 V CE(sat) @I C /I B =10 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 I C -COLLECTOR CURRENT(mA) “On”Voltage -2.0 -20mA Vc E =-10V 。 Ta=25 C 80 0 -0.2 DC Current Gain IC= -10mA C 100 IC-COLLECTOR CURRENT(AMP) -1.2 IC 300 -1.0 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 J E 400 N I C =-100mA I C =-20mA -0.4 0 I C =-200mA V,VOLTAGE(VOLTS) I C =-50mA fT ,CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) T J =25 C I C= -10mA -50 -100 I C -COLLECTOR CURRENT(mAdc) Normailzed DC Current (mAdc) -0.8 D T ,. L O V BE(sat) @ I C /I B =10 -0.8 0 -0.1 -0.2 fT ,CURRENT-GAIN- BANDWIDTH PRODUCT VC,COLLECTOR- EMITTER VOLTAGE(VOLTS) hFE, DC CURRENT GAIN(NORMALIZED) VC,COLLECTOR- EMITTER VOLTAGE(V) hFE,NORMALIZED DC CURRENT GAIN Typical Characteristics 500 Vc E =-5.0V 200 100 Http:// www.wej.cn 50 20 -1.0 -10 -100 I C -COLLECTOR CURRENT(mA) Current-Gain-Bandwidth Pouduct E-mail:[email protected]