CPH5504 Ordering number : ENN6793A CPH5504 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5504 is composed of 2 chips each equivaient to the CPH3205. Ultrasmall package facilitates miniaturization in end products. (mounting height : 0.9mm) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions Ratings 100 100 50 6 3 6 600 0.9 1.2 150 -55 to +15 Mounted on a ceramic board (600mm2✕0.8mm) Mounted on a ceramic board (600mm2✕0.8mm) Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO hFE1 hFE2 fT Cob DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=2V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA Ratings min typ max 1 1 560 200 70 Marking : ED 380 13 80 140 0.88 120 210 1.2 Unit µA µA MHz pF mV mV V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005EA MS IM TB-00001409 / 21401 TS IM TA-2946 No.6793-1/4 CPH5504 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings Conditions V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf min 100 100 50 6 IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Package Dimensions typ Unit max V V V V ns ns ns 35 300 22 Switching Time Test Circuit unit : mm 7017-003 4 3 0.2 2.8 1.6 OUTPUT RB 0.05 VR 50Ω 0.6 1 IB2 INPUT 0.6 5 IB1 PW=20µs D.C.≤1% 0.15 0.4 2 0.95 1 : Collector 2 : Collector 3 : Base 4 : Emitter Common 5 : Base + + 100µF 470µF VBE= --5V VCC=25V 10IB1= --10IB2=IC=1A 0.7 0.9 0.2 2.9 RL SANYO : CPH5 Electrical Connection 4 1 3 Top view 2 IC -- VCE A 100m 4.5 IC -- VBE 3.0 VCE=2V 80mA 4.0 60mA 3.5 40mA 2.5 Collector Current, IC -- A 5.0 Collector Current, IC -- A 1 : Collector 2 : Collector 3 : Base 4 : Emitter Common 5 : Base 3.0 2.5 20mA 2.0 10mA 1.5 5.0mA 1.0 2.0 Ta=75°C 25°C --25°C 5 1.5 1.0 0.5 0.5 IB=0mA 0 0 0.4 0.8 1.2 1.6 Collector-to-Emitter Voltage, VCE -- V 2.0 IT02464 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT02465 No.6793-2/4 CPH5504 hFE -- IC 1000 Gain Bandwidth Product, f T -- MHz 7 5 DC Current Gain, hFE Ta=75°C 3 2 --25°C 25°C 100 7 5 3 2 10 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 5 3 2 100 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A IT02466 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 10 7 5 3 5 IT02467 VCE(sat) -- IC 1000 f=1MHz 7 Output Capacitance, Cob -- pF VCE=10V 7 2 0.01 3 Cob -- VCB 100 f T -- IC 1000 VCE=2V IC / IB=20 7 5 3 2 °C 75 100 = Ta 7 5 °C 25 C 5° --2 3 2 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- mV 2 5°C 7 = Ta 5 C 5° °C 2 --25 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A ASO s s s 0m op s er 3 2 0µ DC ms 10 ati on 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 7 1.0 2 3 5 IT02469 2 1000 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT02471 PC -- Ta 1.2 0µ 10 1.0 7 5 5 IC / IB=50 1.4 1m IC=3A 3 Collector Current, IC -- A ICP=6A 50 3 2 2 3 IT02470 10 Collector Current, IC -- A 10 7 5 7 0.1 VBE(sat) -- IC 100 0.01 5 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 7 5 5 5 100 3 Collector Current, IC -- A IC / IB=50 7 2 IT02468 VCE(sat) -- IC 1000 0.01 10 0.01 5 7 1.0 To t 0.9 al 0.8 1u nit Di ss ip ati on 0.6 0.4 0.2 Mounted on a ceramic board (600mm2✕0.8mm) 0 5 7 IT02472 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02473 No.6793-3/4 CPH5504 PC(TR2) -- PC(TR1) Collector Dissipation, PC(TR2) -- W 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Mounted on a ceramic board (600mm2✕0.8mm) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Dissipation, PC(TR1) -- W 0.9 1.0 IT02474 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.6793-4/4