isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD201 VCBO VCEO VEBO UNIT 60 Collector-Base Voltage V BD203 60 BD201 45 BD203 60 Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak tp≤10ms 12 A ICSM Collector Current-Peak tp≤2ms 25 A IB Base Current 3 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS BD201 MIN MAX UNIT 45 IC= 0.2A ;IB= 0 V B BD203 60 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.6A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.2 mA ICBO Collector Cutoff Current VCB= 40V;IE= 0; TJ= 150℃ 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.5 mA hFE fT B B B B BD201 IC= 3A ; VCE= 2V BD203 IC= 2A ; VCE= 2V DC Current Gain 30 Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 3V, ftest= 1.0MHz 7.0 MHz Switching Times ton Turn-On Time 1 μs 4 μs IC= 2A; IB1= -IB2= 0.2A toff Turn-Off Time isc Website：www.iscsemi.cn 2