MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc http://onsemi.com 60 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 300 WATTS • Pb−Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage Rating MJ14001 MJ14002/03 VCEO 60 80 Vdc Collector−Base Voltage MJ14001 MJ14002/03 VCBO 60 80 Vdc VEBO 5.0 Vdc IC 60 Adc Base Current − Continuous IB 15 Adc Emitter Current − Continuous IE 75 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 300 1.71 W W/°C TJ, Tstg − 65 to +200 °C Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−204 (TO−3) CASE 197A STYLE 1 MJ1400x = Device Code xx = 1, 2, or 3 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin ORDERING INFORMATION 360 PD, POWER DISSIPATION (WATTS) MJ1400xG AYYWW MEX 330 Device MJ14001 270 MJ14001G 210 MJ14002 150 MJ14002G 90 MJ14003 30 0 MJ14003G 0 40 80 120 160 TC, CASE TEMPERATURE (°C) 200 Package Shipping TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray TO−3 100 Units/Tray TO−3 (Pb−Free) 100 Units/Tray 240 Preferred devices are recommended choices for future use and best overall value. Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 6 1 Publication Order Number: MJ14001/D MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.584 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 − − − − 1.0 1.0 − − 1.0 1.0 − − 1.0 1.0 − 1.0 30 15 5.0 − 100 − − − − 1.0 2.5 3.0 − − − 2.0 3.0 4.0 − 2000 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) MJ14001 MJ14002, MJ14003 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) MJ14001 MJ14402, MJ14003 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 V) (VCE = 80 Vdc, VBE(off) = 1.5 V) MJ14001 MJ14002, MJ14003 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MJ14001 MJ14002, MJ14003 Vdc ICEO mA ICEX mA ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mA mA ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 25 Adc, VCE = 3.0 V) (IC = 50 Adc, VCE = 3.0 V) (IC = 60 Adc, VCE = 3.0 V) hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) VCE(sat) Base−Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 100 70 50 30 20 IC, COLLECTOR CURRENT (AMP) 5.0 ms dc 10 7.0 5.0 3.0 2.0 TC = 25°C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 0.7 0.5 0.3 0.2 0.1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200_C. T J(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 1.0 ms MJ14001 MJ14002, MJ14003 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 Figure 2. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 2 MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) TYPICAL ELECTRICAL CHARACTERISTICS MJ14001, MJ14003 (PNP) 300 200 300 200 100 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN MJ14002 (NPN) 70 50 VCE = 3.0 V TJ = −55°C TJ = 25°C TJ = 150°C 30 20 10 7.0 5.0 70 50 VCE = 3.0 V TJ = −55°C TJ = 25°C TJ = 150°C 30 20 10 7.0 5.0 3.0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 3.0 0.7 1.0 70 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2.8 TJ = 25°C IC = 60 A 2.0 1.6 IC = 25 A 1.2 0.8 IC = 10 A 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 2.4 TJ = 25°C IC = 60 A 2.0 1.6 IC = 25 A 1.2 0.8 IC = 10 A 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 Figure 6. Collector Saturation Region 2.8 2.8 TJ = 25°C 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 TJ = 25°C 2.4 V, VOLTAGE (VOLTS) 2.4 V, VOLTAGE (VOLTS) 70 2.8 Figure 5. Collector Saturation Region 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 3.0 V 0.4 0 0.7 50 Figure 4. DC Current Gain Figure 3. DC Current Gain 2.4 30 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) VBE(on) @ VCE = 3.0 V 0.4 VCE(sat) @ IC/IB = 10 50 70 0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) Figure 8. “On” Voltages Figure 7. “On” Voltages http://onsemi.com 3 50 70 MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) 1.0 0.7 0.5 4.0 3.0 2.0 0.3 0.2 t, TIME (s) μ t, TIME (s) μ ts tr td 0.1 0.07 0.05 0.03 0.01 0.7 1.0 tf 0.3 0.2 0.1 0.07 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.02 1.0 0.7 0.5 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.04 0.7 1.0 70 Figure 9. Turn−On Switching Times 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) RB 0 C, CAPACITANCE (pF) 10000 7000 5000 tr ≤ 20 ns 2000 1000 700 500 300 0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 2.0 50 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 12. Switching Test Circuit 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 0.05 0.02 0.03 0.02 TO SCOPE tr ≤ 20 ns D = 0.5 0.3 0.1 0.07 0.05 RB FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 70 100 Figure 11. Capacitance Variation 1.0 0.7 0.5 −30 V RL tr ≤ 20 ns 10 to 100 ms VBB DUTY CYCLE ≈ 2.0% +7.0 V MJ14002 (NPN) MJ14001, MJ14003 (PNP) 100 1.0 VCC −12 V TJ = 25°C 200 +10 V Cob Cob TO SCOPE tr ≤ 20 ns −12 V 10 to 100 ms DUTY CYCLE ≈ 2.0% 3000 −30 V RL +2.0 V Cib 70 Figure 10. Turn−Off Switching Times VCC Cib 50 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 Figure 13. Thermal Response http://onsemi.com 4 50 70 100 200 300 500 700 1000 2000 MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A N C −T− E D U DIM A B C D E G H K L N Q U V K 2 PL 0.30 (0.012) V SEATING PLANE T Q M M Y M −Y− L 2 H G B 1 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR −Q− 0.25 (0.010) INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 M T Y M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJ14001/D