Hittite HMC478MP86E Sige hbt gain block mmic amplifier, dc - 4 ghz Datasheet

HMC478MP86 / 478MP86E
v03.0810
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
Features
The HMC478MP86 / HMC478MP86E is an ideal RF/
IF gain block & LO or PA driver:
P1dB Output Power: +18 dBm
• Cellular / PCS / 3G
Output IP3: +32 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
Single Supply: +5V to +8V
• Microwave Radio & Test Equipment
Robust 1,000V ESD, Class 1C
Gain: 22 dB
Included in the HMC-DK001 Designer’s Kit
General Description
Functional Diagram
The HMC478MP86 & HMC478MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. This
Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC478MP86(E) offers 22 dB of gain with a
+32 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Min.
Typ.
19
15
13
11
22
18
16
14
Max.
Units
dB
dB
dB
dB
DC - 4 GHz
0.015
Input Return Loss
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
12
13
dB
dB
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
20
17
dB
dB
Reverse Isolation
DC - 4 GHz
dB/ °C
20
dB
18
16
14
12
dBm
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
32
29
25
dBm
dBm
dBm
Noise Figure
DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
3.5
dB
dB
62
mA
Supply Current (Icq)
15
13
11
9
0.02
Note: Data taken with broadband bias tee on device output.
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Gain vs. Temperature
30
20
25
10
20
S21
S11
S22
0
8
15
-10
10
-20
5
+25 C
+85 C
-40 C
0
-30
0
1
2
3
4
5
6
7
0
8
1
FREQUENCY (GHz)
0
-5
-5
-10
-15
+25 C
-25
+85 C
-40 C
3
4
5
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
-20
2
FREQUENCY (GHz)
-10
-15
-20
+25 C
+85 C
-40 C
-25
-30
-30
0
1
2
3
4
5
0
1
FREQUENCY (GHz)
2
3
4
5
4
5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
9
-5
+25 C
+85 C
-40 C
-10
-15
-20
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
30
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
+25 C
+85 C
-40 C
7
6
5
4
3
2
-25
1
0
-30
0
1
2
3
FREQUENCY (GHz)
4
5
0
1
2
3
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
24
22
22
20
20
18
18
16
16
Psat (dBm)
P1dB (dBm)
24
14
12
10
8
10
+25C
+85C
-40C
4
2
2
0
0
0
1
2
3
4
5
0
1
2
FREQUENCY (GHz)
30
25
20
+25 C
+85 C
-40 C
10
1
2
3
4
5
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
35
0
32
28
24
20
16
12
Gain
P1dB
Psat
OIP3
8
4
0
5
Icc (mA)
+25 C
60
55
-40 C
50
45
3.9
4
Vcc (Vdc)
4.1
4.2
4.3
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
+85 C
3.8
7
8
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 18 Ohms @ 850 MHz
80
40
3.7
6
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 18 Ohms
65
5
36
FREQUENCY (GHz)
75
4
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
Output IP3 vs. Temperature
15
3
FREQUENCY (GHz)
70
8-3
12
6
+85 C
-40 C
4
14
8
+25 C
6
OIP3 (dBm)
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
Psat vs. Temperature
36
32
28
24
20
16
12
Gain
P1dB
Psat
OIP3
8
4
0
4.5
5
5.5
Vs (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFIN)(Vcc = +4.3 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Collector Bias Voltage (Vcc)
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC478MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC478MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking
[1]
478
[2]
478
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-4
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
RBIAS VALUE
18 Ω
35 Ω
67 Ω
RBIAS POWER RATING
1/8 W
1/4 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
8-5
50
900
1900
2200
2400
3500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC478MP86 / 478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Evaluation PCB
List of Materials for Evaluation PCB 110170 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1, C2
Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 μF Capacitor, Tantalum
R1
Resistor, 1210 Pkg.
L1
Inductor, 0603 Pkg.
U1
HMC478MP86 / HMC478MP86E
PCB [2]
107087 Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink.
The evaluation circuit board shown is available from
Hittite upon request.
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-6
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