Diode Semiconductor Korea MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER FEATURES ITO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 4.5± 0.2 10.2± 0.2 3.1+0.2 -0.1 4.0± 0.3 13.5± 0.5 Cas e:JEDEC ITO-220AC,m olded plas tic body Term inals :Solderable per MIL-STD-750, 1 1 2 φ 3 .2± 0.2 PIN 1 MECHANICAL DATA 8.2± 0.2 Guard ring for over voltage protection. 16.5± 0.3 15.2± 0.5 High current capacity, low forward voltage drop. φ 3 .3± 0.1 Metal s ilicon junction, m ajority carrier conduction. 2.6± 0.2 1.4± 0.1 0.6± 0.1 Method 2026 Polarity: As m arked 0.6± 0.1 5.0± 0.1 Pos ition: Any Weight:0.056 ounces,1.587 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNITS 850 860 880 8100 830 835 840 845 Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 80 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 56 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 80 100 V Maximum average forw ard total device11111111 m rectified current @TC = 125°C IF(AV) 8.0 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 150 A Maximum forw ard (I F=8.0A ,TC=125 ) voltage (IF=8.0A,TC=25 (Note 1) ( I F=16A ,TC=25 Maximum reverse current at rated DC blocking voltage ) VF ) @TC =25 @TC =125 IR 0.57 0.70 - 0.70 0.80 0.85 0.84 0.95 - 0.1 0.5 15 50 mA Maximum thermal resistance (Note 2) RθJC 3.0 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance f rom junction to case. V K/W www.diode.kr Diode Semiconductor Korea MBRF830 - - - MBRF8100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 -- FORWARD DERATING CURVE 150 120 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave TJ=125 90 60 30 0 10 1 100 10 8 6 4 2 0 25 50 NUMBER OF CYCLES AT 60HZ MBR850-MBR860 P u ls e w id t h = 3 0 0 1 % D u t y C y c le .2 .4 .6 .8 1.0 1 .2 1 .4 1 .6 1 .8 s 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 2.2 INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES MBR830-MBR845 MBR880-MBR8100 1 125 150 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 200 10 100 CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 100 75 10 Tc=125 1.0 T C=25 0.1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr