ON NCV8440STT3G Protected power mosfet 2.6 a, 52 v, n−channel, logic level, clamped mosfet w/ esd protection Datasheet

NCV8440
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Benefits
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• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Features
•
•
•
•
•
•
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
These are Pb−Free Devices
VDSS
(Clamped)
RDS(ON) TYP
ID MAX
52 V
95 mW @ 10 V
2.6 A
Drain (Pins 2, 4)
Overvoltage
Protection
Gate
(Pin 1)
Applications
ESD Protection
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
4
SOT−223
CASE 318E
STYLE 3
AYW
F9N05 G
G
1 = Gate
2 = Drain
3 = Source
1
2
GATE
3
SOURCE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NCV8440STT1G
SOT−223
(Pb−Free)
1000/Tape & Reel
NCV8440STT3G
SOT−223
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 5
1
Publication Order Number:
NCV8440/D
NCV8440
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
52−59
V
Gate−to−Source Voltage − Continuous
VGS
±15
V
IDM
2.6
10
A
PD
1.69
W
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 ms) (Note 1)
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
ID
TJ, Tstg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W)
EAS
110
mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
VLD
60
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
RqJA
RqJA
74
169
TL
260
V
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2).
2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8440
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
52
50.8
55
54
−9.3
59
59.5
V
V
mV/°C
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
(VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4)
IDSS
Gate−Body Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
IGSS
10
25
±35
±10
mA
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 100 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
RDS(on)
Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)
1.1
1.5
−4.1
1.9
135
150
95
180
160
110
V
mV/°C
mW
gFS
3.8
Mhos
Ciss
155
pF
Coss
60
Crss
25
Ciss
170
Coss
70
Crss
30
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
VDS = 35 V, VGS = 0 V,
f = 10 kHz
Transfer Capacitance
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 10 kHz
Transfer Capacitance
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
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3
pF
NCV8440
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VGS = 4.5 V, VDD = 40 V,
ID = 2.6 A, RD = 15.4 W
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VGS = 4.5 V, VDD = 40 V,
ID = 1.0 A, RD = 40 W
Fall Time
Turn−On Delay Time
Rise Time
VGS = 10 V, VDD = 15 V,
ID = 2.6 A, RD = 5.8 W
Turn−Off Delay Time
Fall Time
Gate Charge
VGS = 4.5 V, VDS = 40 V,
ID = 2.6 A (Note 3)
Gate Charge
VGS = 4.5 V, VDS = 15 V,
ID = 1.5 A (Note 3)
td(on)
375
tr
1525
td(off)
1530
tf
1160
td(on)
325
tr
1275
td(off)
1860
tf
1150
td(on)
190
tr
710
td(off)
2220
tf
1180
QT
4.5
Q1
0.9
Q2
2.6
QT
3.9
Q1
1.0
Q2
1.7
VSD
0.81
0.66
trr
730
ta
200
tb
530
QRR
6.3
ns
ns
ns
nC
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
IS = 2.6 A, VGS = 0 V (Note 3)
IS = 2.6 A, VGS = 0 V, TJ = 125°C
Reverse Recovery Time
IS = 1.5 A, VGS = 0 V,
dIs/dt = 100 A/ms (Note 3)
Reverse Recovery Stored Charge
1.5
V
ns
mC
ESD CHARACTERISTICS (Note 4)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
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4
ESD
5000
500
V
NCV8440
10
Emax, MAX SWITCHING ENERGY (mJ)
100°C
150°C
1
0.1
10
ID, DRAIN CURRENT (AMPS)
100
25°C
1
10
100
100°C
150°C
10
0.1
1
10
100
L, LOAD INDUCTANCE (mH)
Figure 1. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 2. Single Pulse Maximum Switching
Energy vs. Load Inductance
VGS = 10 V
10
5V
VDS ≥ 10 V
4V
3.8 V
TJ = 25°C
8
3.6 V
6
3.4 V
3.2 V
4
3V
2.8 V
2
0
25°C
L, LOAD INDUCTANCE (mH)
ID, DRAIN CURRENT (AMPS)
ILmax, MAX SWITCH−OFF CURRENT (A)
TYPICAL PERFORMANCE CURVES
2.6 V
2.4 V
0
1
2
3
4
8
6
4
TJ = 25°C
0
5
TJ = 150°C
2
1
1.5
TJ = −40°C
2.5
3
2
3.5
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−State Output Characteristics
Figure 4. Transfer Characteristics
300
350
ID = 2 A
300
250
250
RDS(on) (mW)
RDS(on) (mW)
150°C
200
25°C
150
200
150°C, VGS = 10 V
150
25°C, VGS = 5 V
25°C, VGS = 10 V
100
100
50
150°C, VGS = 5 V
−40°C, VGS = 5 V
−40°C
3
4
5
6
7
8
9
50
10
1
2
3
4
−40°C, VGS = 10 V
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 5. RDS(on) vs. Gate−Source Voltage
Figure 6. RDS(on) vs. Drain Current
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5
9
10
NCV8440
TYPICAL PERFORMANCE CURVES
2.00
1.2
NORMALIZED RDS(on)
1.75
NORMALIZED VGS(th) (V)
ID = 2 A
1.50
VGS = 5 V
1.25
1.00
VGS = 10 V
0.75
0.50
−40 −20
0
20
40
60
80
100
120
ID = 100 mA,
VDS = VGS
1.1
1.0
0.9
0.8
0.7
0.6
−40 −20
140
TJ, JUNCTION TEMPERATURE (°C)
0
20
40
60
80
120 140
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Normalized RDS(on) vs. Temperature
Figure 8. Normalized Threshold Voltage vs.
Temperature
10
1000
VGS = 0 V
IS, SOURCE CURRENT (A)
100
IDSS (mA)
10
1
0.1
150°C
100°C
0.01
25
30
35
45
40
150°C
0.6
0.7
−40°C
0.8
0.9
1
VDS , DRAIN−TO−SOURCE VOLTAGE (V)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Drain−to−Source Leakage Current
Figure 10. Source−Drain Diode Forward
Characteristics
TJ = 25°C
Ciss
VGS = 0 V
Crss
200
Ciss
100
Coss
Crss
0
10
2
0
0.5
50
5
VGS
0
VDS
5
10
15
20
25
30
35
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
20
400 VDS = 0 V
300
4
5
50
QT
VDS
4
QGS
QGD
3
30
2
20
1
0
0
1
2
4
3
QG, TOTAL GATE CHARGE (nC)
Figure 12. Gate−to−Source Voltage vs. Total
Gate Charge
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6
10
ID = 2.6 A
TJ = 25°C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance Variation
40
VGS
5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
500
15
6
25°C
25°C
0.001
10
8
NCV8440
TYPICAL PERFORMANCE CURVES
3000
VDD = 40 V
VDD = 15 V
2500
10,000
td(off)
VDD = 40 V
VDD = 15 V
td(off)
ID = 2.6 A
RG = 0 W
1500
TIME (ns)
TIME (ns)
2000
tf
1000
tf
tr
1000
0
td(on)
tr
500
td(on)
4
5
6
7
8
9
100
10
1
10
100
1000
10,000
VGS (V)
RG (W)
Figure 13. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 14. Resistive Load Switching Time vs.
Gate Resistance (VGS = 5 V, ID = 2.6 A)
110
10,000
VDD = 40 V
VDD = 15 V
100
RqJA (°C/W)
TIME (ns)
td(off)
tf
1000
tr
td(on)
100
1
90
PCB Cu thickness, 1.0 oz
80
70
60
10
100
1000
50
10,000
PCB Cu thickness, 2.0 oz
0
50
100 150 200 250 300 350 400 450 500
RG (W)
COPPER HEAT SPREADER AREA (mm2)
Figure 15. Resistive Load Switching Time vs.
Gate Resistance (VGS = 10 V, ID = 2.6 A)
Figure 16. RqJA vs. Copper Area
100
RqJA 788 mm2 C°/W
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 17. Transient Thermal Resistance
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7
1
10
100
1000
NCV8440
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
HE
q
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
E
1
2
3
b
e1
e
0.08 (0003)
C
q
A
A1
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
4
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NCV8440/D