ＩＮJ0001AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING DESCRIPTION INJ0001AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. INJ0001AT2 INJ0001AM1 2.1 0.3 ② 0.425 ③ 0.15 ① 1.25 0～0.1 0.7 0.5 0.9 ③ 0.65 1.2 0.8 2.0 1.3 ② 0.2 0.25 0.4 ① 0.4 FEATURE 0.425 0.65 0.8 0.2 ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6～-1.2V ・Low on Resistance. Ron=7Ω(TYP) ・High speed switching. ・Small package for easy mounting. Unit：mm APPLICATION high speed switching , Analog switching JEITA, JEDEC：－ ISAHAYA：T-USM JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0001AU1 INJ0001AC1 1.6 EQUIVALENT CIRCUIT 0.4 0.8 2.5 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 2.9 1.90 ② 0.3 0.5 ① 1.6 1.0 G 0.5 D ③ 0.16 0～0.1 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN 0.8 1.1 0.15 0～0.1 0.55 0.7 S JEITA：SC-59 JEDEC：Similar to TO-236 T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ISAHAYA ELECTRONICS CORPORATION ＩＮJ0001AＸ SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶDSS ＶGSS Ｉ D Drain-source voltage Gate-source voltage Drain current Total power dissipation （Ta=25℃） Channel temperature Range of Storage temperature ＰＤ Ｔch Ｔｓｔｇ RATING INJ0001AU1 INJ0001AM1 -50 ±8 -100 INJ0001AT2 125（※） 150 +125 -55～+125 ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） 200 mW ℃ ℃ ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. PARAMETER V(BR)DSS IGSS IDSS Vth | Yfs | Drain-source breakdown voltage I D=-100μA, V Gate-source leak current V GS Zero gate voltage drain current V DS Gate threshold voltage I D=-250μA, V Forward transfer admittance Static drain-source on-state resistance Input capacitance V V DS GS =0V,f=1MHz Output capacitance V DS=-10V, V GS=0V,f=1MHz Switching time V V Ciss Coss tON tOFF V V mA +150 -55～+150 SYMBOL RDS(ON) UNIT INJ0001AC1 TEST CONDITION =0V GS MIN -50 LIMIT TYP - MAX - - - ±0.5 μA =±5V, VDS=0V =-50V ,VGS=0V UNIT V - - -1.0 μA -0.6 - -1.2 V - 220 - mS - 7 - Ω - 28 - pF - 5.2 - pF DD - 13 - GS - 135 - DS= V GS =-10V, I D=-0.1A DS I D=-100mA, V =-10V, V =-4.0V GS =-5V , I D=-10mA =0～-5V ns Switching time test condition test circuit OUT IN 0 RL 50Ω -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 0V input waveform 10% 90% -5V VDD VDS(ON） 90% output waveform 10% VDD tf tr ton ISAHAYA ELECTRONICS CORPORATION toff TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ ID -VDS(Low voltage region) Ta=25℃ -100 -10 -1.6V -1.5V -8 -1.4V -60 -1.3V -40 -1.2V -20 -1.0V Drain current ID (mA) Drain current ID (mA) -80 -6 -0.95V -4 VGS=-0.9V -2 -1.1V -0.85V VGS=-1.0V -0.8V -0 -0 -0 -5 -10 -0 -0.1 Drain-Source voltage VDS (V) -0.2 IDR -VDS -0.5 -2 -3 -4 Gate-Source voltage VGS (V) -5 -1000 Ta=25℃ VGS=0V Ta=25℃ VDS=-10V Drain current ID (mA) Drain reverse current IDR (mA) -0.4 ID -VGS -100 -10 -100 -10 -1 -1 0 0.5 1 1.5 Drain-Source voltage VDS (V) 2 -0 -1 |Yfs| - ID VDS(ON) - ID -1000 1000 Ta=25℃ VDS=-10V Drain-Source ON voltage VDS(ON)(mV) Forward transfet admittance |Yfs| (mS) -0.3 Drain-Source voltage VDS (V) 100 10 1 Ta=25℃ VGS=-4V -100 -10 -1 -1 -10 -100 Drain current ID (mA) -1000 -1 -10 Drain current ID (mA) -100 C - VDS t - ID 100 10000 Ta=25℃ 1000 tf Capacitance C (pF) Switching time t (ns) toff 100 10 ton Ciss 10 Ta=25℃ VGS=0V Coss tr 1 -0.1 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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