Sirectifier HUR1060 Soft recovery behaviour high-performance ultra fast recovery epitaxial diode Datasheet

HUR1060
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
600
HUR1060
Symbol
VRRM
V
600
Test Conditions
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
IFRMS
IFAVM
TC=135oC; rectangular, d=0.5
35
10
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
50
A
0.1
mJ
0.1
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=0.9A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
P1
typical
o
C
60
W
0.4...0.6
Nm
2
g
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR1060
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
60
0.25
uA
mA
VF
IF=10A; TVJ=150oC
TVJ=25oC
1.42
2.10
V
RthJC
RthCH
0.5
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
trr
VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
K/W
35
o
IRM
2.5
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ns
4.4
ADVANTAGES
A
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR1060
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
30
1.4
T = 100°C
nC VJ
V = 300V
1.2 R
A
25
IF
TVJ=150°C
20
Qr
TVJ=100°C
TVJ= 25°C
15
1.0
40
TVJ= 100°C
A VR = 300V
IRM
IF= 20A
IF= 10A
IF= 5A
0.8
30
IF= 20A
IF= 10A
IF= 5A
20
0.6
10
0.4
5
10
0.2
0
0.0
0.5
1.0
1.5
VF
0.0
100
2.0 V 2.5
Fig. 1 Forward current IF versus VF
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
120
2.0
Kf
trr
1.5
1.0
80
0.5
1.2
40
80
120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
0
200
400
0.9
10
0.6
5
0.3
TVJ= 100°C
IF = 10A
70
0
ıus
VFR
tfr
Qr
0.0
600 A/us
800 1000
-diF/dt
400
tfr
IF= 20A
IF= 10A
IF= 5A
90
IRM
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
V
VFR
15
110
100
0
20
TVJ= 100°C
VR = 300V
ns
0
600
800 1000
A/us
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
10
K/W
0
0
200
0.0
600 A/us
800 1000
diF/dt
400
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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