HUR1060 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=135oC; rectangular, d=0.5 35 10 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 50 A 0.1 mJ 0.1 A EAS IAR o TVJ=25 C; non-repetitive; IAS=0.9A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight P1 typical o C 60 W 0.4...0.6 Nm 2 g ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR1060 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 60 0.25 uA mA VF IF=10A; TVJ=150oC TVJ=25oC 1.42 2.10 V RthJC RthCH 0.5 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC trr VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 35 o IRM 2.5 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 4.4 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR1060 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 30 1.4 T = 100°C nC VJ V = 300V 1.2 R A 25 IF TVJ=150°C 20 Qr TVJ=100°C TVJ= 25°C 15 1.0 40 TVJ= 100°C A VR = 300V IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 1.5 VF 0.0 100 2.0 V 2.5 Fig. 1 Forward current IF versus VF A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 2.0 Kf trr 1.5 1.0 80 0.5 1.2 40 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 0.9 10 0.6 5 0.3 TVJ= 100°C IF = 10A 70 0 ıus VFR tfr Qr 0.0 600 A/us 800 1000 -diF/dt 400 tfr IF= 20A IF= 10A IF= 5A 90 IRM 200 Fig. 3 Peak reverse current IRM versus -diF/dt V VFR 15 110 100 0 20 TVJ= 100°C VR = 300V ns 0 600 800 1000 A/us -diF/dt Fig. 5 Recovery time trr versus -diF/dt 10 K/W 0 0 200 0.0 600 A/us 800 1000 diF/dt 400 Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com