DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive HR1 SERIES LISTS Products Marking R1 (KΩ) R2 (KΩ) HR1A3M MP 1.0 1.0 HR1F3P MQ 2.2 10 HR1L3N MR 4.7 10 HR1A4, MS 10 10 HR1L2Q MT 0.47 4.7 HR1F2Q MU 0.22 2.2 HR1A4A MX − 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −1.0 A IC(pulse) * −2.0 A Base current (DC) IB(DC) −0.02 A Total power dissipation Collector current (Pulse) PT ** 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ** When 0.7 mm × 16 cm ceramic board is used 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16184EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 HR1 SERIES +5$0 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.4 A −0.4 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ +5)3 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.3 A −0.3 VIL ** VCE = –5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ +5/1 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.2 A −0.3 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ 3:≤µVGXW\F\FOH≤ − 'DWD6KHHW'(-9'6 HR1 SERIES +5$0 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.1 A −0.2 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ +5/4 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 − Low level output voltage VOL ** VIN = −5.0 V, IC = −0.5 A −0.55 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ +5)4 (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −60 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 100 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 Low level output voltage VOL ** VIN = −5.0 V, IC = −0.5 A −0.55 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − Input resistance R1 154 220 286 kΩ E-to-B resistance R2 1.54 2.2 2.86 kΩ 3:≤µVGXW\F\FOH≤ 'DWD6KHHW'(-9'6 HR1 SERIES +5$$ (/(&75,&$/&+$5$&7(5,67,&6 7D °°& Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = −60 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −0.5 A 100 − hFE3 ** VCE = −2.0 V, IC = −1.0 A 50 DC current gain Collector saturation voltage Low level input voltage VCE(sat) ** IC = −500 mA, IB = −10 mA VIL ** VCE = −5.0 V, IC = −100 µA −0.3 Input resistance R1 E-to-B resistance R2 7 'DWD6KHHW'(-9'6 − 0.20 − 3:≤µVGXW\F\FOH≤ MIN. 0.35 V −1.5 V − − Ω 10 13 kΩ HR1 SERIES 7<3,&$/&+$5$&7(5,67,&6 7a °°& 'DWD6KHHW'(-9'6 HR1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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