IXYS IXFB38N100Q2 Hiperfet tm power mosfet Datasheet

HiPerFETTM
Power MOSFETs
IXFB38N100Q2
VDSS = 1000 V
ID25 =
38 A
RDS(on)= 0.25 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
trr ≤ 300 ns
PLUS 264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
1000
1000
V
V
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
38
152
38
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
890
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Fc
Mounting Force
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
z
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
30...120/7.5...27 N/lb
z
Weight
10
g
z
z
z
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
1000
V
VGS(th)
VDS = VGS, ID =8 mA
2.5
5.5 V
IGSS
VGS = ± 30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2005 IXYS All rights reserved
(TAB)
S
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
z
Advantages
z
± 200 nA
TJ = 25°C
TJ = 125°C
50 μA
3 mA
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
z
z
PLUS 264TM package for clip or spring
mounting
Space savings
High power density
0.25 Ω
DS98949E(09/05)
IXFB38N100Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25
Note 1
24
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
S
7200
pF
950
pF
Crss
170
pF
td(on)
25
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
28
ns
td(off)
RG = 1 Ω (External)
57
ns
15
ns
250
nC
60
nC
105
nC
tf
QG(on)
QGS
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
QGD
RthJC
0.14
RthCK
0.13
Source-Drain Diode
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
QRM
IRM
Terminals:
K/W
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
trr
K/W
PLUS 264TM Outline
IF = 25A
-di/dt = 100 A/μs
VR = 100 V
38
A
152
A
1.5
V
300
ns
1.4
μC
9
A
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFB38N100Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
20
75
VGS = 10V
9V
8V
7V
6V
12
60
ID - Amperes
ID - Amperes
16
5V
8
45
5V
15
0
0
1
2
3
4
VDS - Volts
5
6
7
0
45
10
15
VDS - Volts
20
25
2.8
VGS = 10V
27
RDS(on) - Normalized
2.5
9V
8V
7V
6V
36
ID - Amperes
5
Fig. 4. RDS(on) Normalized to I D25 Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125 Deg. C
5V
18
9
2.2
1.9
1.6
ID = 38A
1.3
ID = 19A
1
0.7
0.4
0
0
5
10
15
20
-50
25
-25
0
25
50
75
100 125 150
T J - Degrees Centigrade
VDS - Volts
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to I D25 Value
vs. ID
2.8
40
2.5
TJ = 125 °C
32
2.2
ID - Amperes
RDS(on) - Normalized
6V
30
4
0
VGS = 10V
9V
8V
7V
1.9
1.6
1.3
TJ = 25 °C
24
16
8
1
0
0.7
0
20
40
I D - Amperes
© 2005 IXYS All rights reserved
60
80
-50
-25
0
25
50
75
100 125 150
T C - Degrees Centigrade
IXFB38N100Q2
Fig. 7. Input Admittance
Fig. 8. Transconductance
75
40
TJ = -40°C
60
TJ = -40°C
24
Gfs - Siemens
ID - Amperes
32
25°C
125°C
16
8
45
TJ = 25°C
30
TJ = 125°C
15
0
0
3
3.5
4
4.5
5
5.5
6
0
10
VGS - Volts
Fig. 9. Source Current vs. Source-ToDrain Voltage
20
ID - Amperes
30
40
Fig. 10. Gate Charge
-100
10
-80
8
V GS - Volts
IS - Amperes
VDS = 500V
-60
TJ = 125°C
-40
TJ = 25°C
-20
ID = 19A
IG = 10mA
6
4
2
0
0
-0.3
-0.5
-0.7
-0.9
-1.1
0
-1.3
VSD - Volts
100
150
200
250
QG - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
1
10000
Ciss
f=1Mhz
1000
R(th)JC - (ºC/W)
Capacitance - pF
50
Coss
0.1
Crss
100
0.01
0
10
20
VDS - Volts
30
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
Pulse Width - milliseconds
1000
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