HiPerFETTM Power MOSFETs IXFB38N100Q2 VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM 1000 1000 V V Continuous Transient ± 30 ± 40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 38 152 38 A A A EAR EAS TC = 25°C TC = 25°C 60 5.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Fc Mounting Force G D G = Gate S = Source D = Drain TAB = Drain Features z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications 30...120/7.5...27 N/lb z Weight 10 g z z z Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 1000 V VGS(th) VDS = VGS, ID =8 mA 2.5 5.5 V IGSS VGS = ± 30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2005 IXYS All rights reserved (TAB) S Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. z Advantages z ± 200 nA TJ = 25°C TJ = 125°C 50 μA 3 mA DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers z z PLUS 264TM package for clip or spring mounting Space savings High power density 0.25 Ω DS98949E(09/05) IXFB38N100Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25 Note 1 24 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 S 7200 pF 950 pF Crss 170 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns td(off) RG = 1 Ω (External) 57 ns 15 ns 250 nC 60 nC 105 nC tf QG(on) QGS VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD RthJC 0.14 RthCK 0.13 Source-Drain Diode Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 QRM IRM Terminals: K/W 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol trr K/W PLUS 264TM Outline IF = 25A -di/dt = 100 A/μs VR = 100 V 38 A 152 A 1.5 V 300 ns 1.4 μC 9 A Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFB38N100Q2 Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 20 75 VGS = 10V 9V 8V 7V 6V 12 60 ID - Amperes ID - Amperes 16 5V 8 45 5V 15 0 0 1 2 3 4 VDS - Volts 5 6 7 0 45 10 15 VDS - Volts 20 25 2.8 VGS = 10V 27 RDS(on) - Normalized 2.5 9V 8V 7V 6V 36 ID - Amperes 5 Fig. 4. RDS(on) Normalized to I D25 Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125 Deg. C 5V 18 9 2.2 1.9 1.6 ID = 38A 1.3 ID = 19A 1 0.7 0.4 0 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade VDS - Volts Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D25 Value vs. ID 2.8 40 2.5 TJ = 125 °C 32 2.2 ID - Amperes RDS(on) - Normalized 6V 30 4 0 VGS = 10V 9V 8V 7V 1.9 1.6 1.3 TJ = 25 °C 24 16 8 1 0 0.7 0 20 40 I D - Amperes © 2005 IXYS All rights reserved 60 80 -50 -25 0 25 50 75 100 125 150 T C - Degrees Centigrade IXFB38N100Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 75 40 TJ = -40°C 60 TJ = -40°C 24 Gfs - Siemens ID - Amperes 32 25°C 125°C 16 8 45 TJ = 25°C 30 TJ = 125°C 15 0 0 3 3.5 4 4.5 5 5.5 6 0 10 VGS - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 20 ID - Amperes 30 40 Fig. 10. Gate Charge -100 10 -80 8 V GS - Volts IS - Amperes VDS = 500V -60 TJ = 125°C -40 TJ = 25°C -20 ID = 19A IG = 10mA 6 4 2 0 0 -0.3 -0.5 -0.7 -0.9 -1.1 0 -1.3 VSD - Volts 100 150 200 250 QG - nanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1 10000 Ciss f=1Mhz 1000 R(th)JC - (ºC/W) Capacitance - pF 50 Coss 0.1 Crss 100 0.01 0 10 20 VDS - Volts 30 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000