HANBit HMF8M32M8V Flash-ROM Module 32MByte (8Mx32Bit), 72Pin-SIMM, 3.3V Design Part No. HMF8M32M8V GENERAL DESCRIPTION The HMF8M32M8V is a high-speed flash read only memory (FROM) module containing 16,777,216 words organized in a x32bit configuration. The module consists of eight 4M x 8bit FROM mounted on a 72-pin, double -sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, ,(/CE_1L, /CE_1H, /CE_2L, /CE_2H) are used to enable the module’s 16 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES PIN Symbol PIN Symbol PIN Symbol 1 Vss 25 DQ17 49 /WE 2 /RESET 26 DQ18 50 A18 w High-reliability, low-power design 3 DQ0 27 DQ19 51 A17 w Single + 3.3V ± 0.3V power supply 4 DQ1 28 DQ20 52 A16 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 w Access time : 90, 120ns w High-density 32MByte design w Easy memory expansion w All inputs and outputs are TTL-compatible 7 DQ4 31 DQ22 55 A13 w FR4-PCB design 8 DQ5 32 DQ23 56 A12 w Low profile 72-pin SIMM 9 DQ6 33 /CE_1H 57 A11 w Minimum 1,000,000 write/erase cycle 10 Vcc 34 /CE_2H 58 A10 w Sectors erase architecture 11 DQ7 35 DQ24 59 Vcc w Sector group protection 12 /CE_1L 36 DQ25 60 A9 13 /CE_2L 37 DQ26 61 A8 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 DQ12 42 DQ30 66 A3 w Temporary sector group unprotection OPTIONS MARKING w Timing 90ns access -90 18 120ns access -120 19 DQ13 43 DQ31 67 A2 20 DQ14 44 NC 68 A1 21 DQ15 45 NC 69 A0 22 NC 46 Vcc 70 A20 23 NC 47 A19 71 A21 24 DQ16 48 /OE 72 Vss w Packages 72-pin SIMM URL:www.hbe.co.kr REV.02(August,2002) M 1 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A1 – A21 A0 /CE_1L 32 21 A0-20 DQ15/A-1 A0-20 DQ15/A-1 /CE /OE /OE /WE RY-BY /WE U1 /CE_1H A0-20 DQ15/A-1 /CE DQ 8-15 A0-20 /OE /OE /WE RY-BY /WE RY-BY U2 /WE /RESET URL:www.hbe.co.kr REV.02(August,2002) U6 A0-20 DQ15/A-1 DQ16-23 DQ16-23 /OE /OE /WE /WE RY-BY U3 /CE /CE_2H /CE U7 /RESET A0-20 DQ15/A-1 DQ24-31 /OE /OE /WE /WE RY-BY RY-BY /RESET /CE_2L /CE A0-20 DQ15/A-1 A0-20 DQ15/A-1 /OE DQ 8-15 /RESET RY-BY /RESET /CE_1H DQ15/A-1 /RESET /CE /CE_2L U5 RY-BY /RESET /RESET /CE_1L DQ 0-7 /CE DQ 0-7 U4 DQ24-31 /CE /CE_2H U8 /RESET 2 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Power dissipation PD 8W TSTG -65oC to +150oC Voltage with respect to ground all other pins Storage Temperature Operating Temperature TA 0oC to + 70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNIT IL1 ±1.0 µA IL0 ±1.0 µA Vcc=Vcc max, VIN= VSS to Input Load Current Vcc Vcc=Vcc max, VOUT= VSS to Output Leakage Current Vcc Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL /CE = VIL, 0.85 Vcc V 0.45 5MHZ 80 128 16 32 ICC1 Vcc Active Read Current (1) /OE = VIH, V mA 1MHZ Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 120 240 mA Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 1.6 40.0 µA 2.5 V Low Vcc Lock-Out Voltage Notes: VLKO 2.3 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress URL:www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Sector Erase Time TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 49 Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 36 108 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER DESCRIPTION PARAMETER SYMBOL CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time -90 -120 Min 90 120 ns Max 90 120 ns Max 90 120 ns tAVQV tACC Address to Output Delay /CE = VIL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Output Enable to Output Delay Max 35 50 ns tEHQZ tDF Chip Enable to Output High-Z Max 30 30 ns tGHQZ tDF Max 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns TEST SPECIFICATIONS TEST CONDITION 90 Output load 120 UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and fall times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL:www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V 3.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 90 120 tAVAV tWC Write Cycle Time Min 90 120 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 50 ns tDVWH tDS Data Setup Time Min 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recovery Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations u Erase/Program Operations URL:www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -90 120 tAVAV tWC Write Cycle Time Min 90 120 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 50 ns tDVWH tDS Data Setup Time Min 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recovery Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 50 ns Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V u READ OPERATIONS TIMING u RESET TIMING URL:www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL:www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL:www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL:www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M32M8V PACKAGE DIMENSIONS (UNIT : mm) 2.54 mm MIN 0.25 mm MAX 1.27±0.08 mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF8M32M8V-90 32MByte 8Mx 32bit 72Pin -SIMM HMF8M32M8V-120 32MByte 8Mx 32bit 72Pin -SIMM URL:www.hbe.co.kr REV.02(August,2002) 11 Component Vcc SPEED 8EA 3.3V 90ns 8EA 3.3V 120ns Number HANBit Electronics Co., Ltd.