HSMC HMX1225 0.8a 300/380 voltage scrs igt<200ua Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 1/2
HMX1225
HMM1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HMX1225/HMM1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Part No.
HMX1225
HMM1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
VGRM
IGM
PG(AV)
Tj
Tstg
Tsld
Min. Max. Unit
380
V
300
V
0.8
A
0.5
A
8
V
1
A
0.1
W
-40 125
°C
-40 125
°C
250
°C
Test Conditions
Tj=40°C to 125°C
(RGK=1K)
TC=40°C
Half Cycle=180°,TC=40°C
IGR=10uA
10us max
20ms max
1.6mm from case 10s max
Classification Of IGT
Rank
HMX1225
HMM1225
A
10-23 uA
10-23 uA
C
17-55 uA
17-55 uA
Electrical Characteristics (Ta=25°C)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
Symbol
IDRM
IDRM
VT
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
VT(TO)
rT
IGT
VGT
IH
IL
dv/dt
di/dt
tgd
Commutated Turn-off Time
tg
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
HMX1225 & HMM1225
Rθjc
Rθja
Min Max Unit
Test Conditions
0.1 mA @VDRM (RGK=1K), Tj=125°C
5
uA @VDRM (RGK=1K), Tj=25°C
1.4
V
at IT=0.4A, Tj=25°C
2.2
V
at IT=0.8A, Tj=25°C
0.95 V
Tj=125°C
600 Ohm Tj=125°C
200 uA VD=7V
0.8
V
VD=7V
5
mA RGK=1K(ohm)
6
mA RGK=1K(ohm)
25
V/us VD=0.67*VDRM(RGK=1K), Tj=125°C
30
A/us IG=10mA,diG/dt=0.1A/us, Tj=125°C
500 ns IG=10mA,diG/dt=0.1A/us
Tc=85°C,VD=0.67*VDRM
200 us
VR=35V,IT=IT(AV)
100
K/W
200
K/W
HSMC Product Specification
HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 2/2
MICROELECTRONICS CORP.
SOT-89 Dimension
HMX1225 Marking:
C
H
Date Code
Laser Marking
D
B
1
2
H MX
1 2 2 5
3
HMM1225 Marking:
I
E
F
Date Code
G
H MM
1 2 2 5
Laser Marking
A
Style: Pin 1.Gate 2.Anode 3.Cathode
3-Lead SOT-89 Plastic Surface Mounted Package
HSMC Package Code: M
*: Typical
Inches
Min.
Max.
0.1732
0.1811
0.1594
0.1673
0.0591
0.0663
0.0945
0.1024
0.0141
0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583
0.0598
0.1165
0.1197
0.0551
0.0630
0.0138
0.0161
Millimeters
Min.
Max.
1.48
1.52
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMX1225 & HMM1225
HSMC Product Specification
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