ON NTGS3441T1G Power mosfet 1 amp, 20 voltsp−channel tsop−6 Datasheet

NTGS3441T1
Power MOSFET
1 Amp, 20 Volts
P−Channel TSOP−6
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Features
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP−6 Surface Mount Package
Pb−Free Package is Available
1 AMPERE
20 VOLTS
RDS(on) = 90 mW
Applications
P−Channel
• Power Management in Portable and Battery−Powered Products,
1 2 5 6
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
"8.0
V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
244
0.5
−1.65
−10
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
128
1.0
−2.35
−14
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp t 10 mS)
RqJA
Pd
ID
IDM
62.5
2.0
−3.3
−20
°C/W
W
A
A
TJ, Tstg
−55 to 150
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, operating to steady state.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
3
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
1
TSOP−6
CASE 318G
STYLE 1
PT
M
G
PT M G
G
1 2 3
Drain Drain Gate
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTGS3441T1
NTGS3441T1G
Package
TSOP−6
Shipping†
3000 / Tape & Reel
TSOP−6 3000 / Tape& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
NTGS3441T1/D
NTGS3441T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5)
Symbol
Characteristic
Min
Typ
Max
Unit
−20
−
−
−
−
−
−
−1.0
−5.0
−
−
−100
−
−
100
−0.45
−1.05
−1.50
−
−
0.069
0.117
0.090
0.135
−
6.8
−
Ciss
−
480
−
pF
Coss
−
265
−
pF
Crss
−
100
−
pF
td(on)
−
13
25
ns
tr
−
23.5
45
ns
td(off)
−
27
50
ns
tf
−
24
45
ns
Qtot
−
6.2
14
nC
Qgs
−
1.3
−
nC
Qgd
−
2.5
−
nC
OFF CHARACTERISTICS
V(BR)DSS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −10 mA)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C)
IDSS
Gate−Body Leakage Current
(VGS = −8.0 Vdc, VDS = 0 Vdc)
IGSS
Gate−Body Leakage Current
(VGS = +8.0 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
VGS(th)
Static Drain−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −3.3 Adc)
(VGS = −2.5 Vdc, ID = −2.9 Adc)
RDS(on)
Forward Transconductance
(VDS = −10 Vdc, ID = −3.3 Adc)
gFS
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −5.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −20 Vdc, ID = −1.6 Adc,
VGS = −4.5 Vdc, Rg = 6.0 W)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −10 Vdc, VGS = −4.5 Vdc,
ID = −3.3 Adc)
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = −1.6 Adc, VGS = 0 Vdc)
VSD
−
−0.88
−1.2
Vdc
Diode Forward On−Voltage
(IS = −3.3 Adc, VGS = 0 Vdc)
VSD
−
−0.98
−
Vdc
(IS = −1.6 Adc, dIS/dt = 100 A/ms)
trr
−
30
60
ns
Reverse Recovery Time
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge are mandatory.
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2
NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
20
VGS = −2.7 V
8
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
VGS = −2.5 V
6
VGS = −3 V
VGS = −3.5 V
VGS = −4 V
VGS = −4.5 V
VGS = −6 V
V
4
GS
= −2 V
2
VGS = −10 V
0
0.4
0
VGS = −1.5 V
0.8
1.2
1.6
TJ = −55°C
12
TJ = 100°C
8
4
1.6
2
2.4
2.8
3.2
3.6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4
0.28
ID = −3.3 A
TJ = 25°C
0.3
0.2
0.1
3
2
4
6
5
7
8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
TJ = 25°C
0.24
VGS = −2.5 V
0.2
0.16
0.12
VGS = −4.5 V
0.08
0.04
0
0
1
0.8
−25
0
12
16
20
VGS = 0 V
TJ = 125°C
1.2
0.6
−50
8
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = −3.3 A
VGS = −4.5 V
−IDSS, LEAKAGE (nA)
1.4
4
−ID, DRAIN CURRENT (AMPS)
100
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.2
0.8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
TJ = 25°C
16
0
0.4
2
0.4
0
VDS> = −10 V
25
50
75
100
125
150
10
TJ = 100°C
1
0.1
TJ = 25°C
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
VDS = 0 V
VGS = 0 V
TJ = 25°C
−VGS, GATE−TO−SOURCE VOLTAGE
(VOLTS)
1200
C, CAPACITANCE (pF)
Ciss
900
Crss
600
Ciss
300
Coss
Crss
0
8
4
−VGS
0
4
8
12
16
20
8
6
QT
4
Qgs
0
0
−IS, SOURCE CURRENT (AMPS)
VGS(th), GATE THRESHOLD VOLTAGE
(NORMALIZED)
10
ID = −250 mA
1.1
1
0.9
0.8
0.7
25
6
8
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.3
0
4
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
−25
2
−VDS
1.2
VDD = −20 V
ID = −3.3 A
TJ = 25°C
2
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
0.6
−50
Qgd
50
75
100
125
150
VGS = 0 V
TJ = 25°C
8
6
4
2
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
TJ, JUNCTION TEMPERATURE (°C)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Gate Threshold Voltage Variation
with Temperature
Figure 10. Diode Forward Voltage vs. Current
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4
1.4
NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
20
POWER (W)
16
12
8
4
0
0.01
0.10
1.00
10.00
100.00
TIME (sec)
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
Figure 11. Single Pulse Power
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E−04
Single Pulse
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
SQUARE WAVE PULSE DURATION (sec)
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient
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5
1E+03
NTGS3441T1
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS3441T1/D
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