NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications P−Channel • Power Management in Portable and Battery−Powered Products, 1 2 5 6 i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS "8.0 V Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 244 0.5 −1.65 −10 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 128 1.0 −2.35 −14 °C/W W A A Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) RqJA Pd ID IDM 62.5 2.0 −3.3 −20 °C/W W A A TJ, Tstg −55 to 150 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, operating to steady state. 2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single sided), t t 5.0 seconds. 3 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 6 5 4 1 TSOP−6 CASE 318G STYLE 1 PT M G PT M G G 1 2 3 Drain Drain Gate = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGS3441T1 NTGS3441T1G Package TSOP−6 Shipping† 3000 / Tape & Reel TSOP−6 3000 / Tape& Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: NTGS3441T1/D NTGS3441T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5) Symbol Characteristic Min Typ Max Unit −20 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.45 −1.05 −1.50 − − 0.069 0.117 0.090 0.135 − 6.8 − Ciss − 480 − pF Coss − 265 − pF Crss − 100 − pF td(on) − 13 25 ns tr − 23.5 45 ns td(off) − 27 50 ns tf − 24 45 ns Qtot − 6.2 14 nC Qgs − 1.3 − nC Qgd − 2.5 − nC OFF CHARACTERISTICS V(BR)DSS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) VGS(th) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) gFS Vdc W Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −20 Vdc, ID = −1.6 Adc, VGS = −4.5 Vdc, Rg = 6.0 W) Fall Time Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (IS = −1.6 Adc, VGS = 0 Vdc) VSD − −0.88 −1.2 Vdc Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) VSD − −0.98 − Vdc (IS = −1.6 Adc, dIS/dt = 100 A/ms) trr − 30 60 ns Reverse Recovery Time 4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25°C 20 VGS = −2.7 V 8 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 VGS = −2.5 V 6 VGS = −3 V VGS = −3.5 V VGS = −4 V VGS = −4.5 V VGS = −6 V V 4 GS = −2 V 2 VGS = −10 V 0 0.4 0 VGS = −1.5 V 0.8 1.2 1.6 TJ = −55°C 12 TJ = 100°C 8 4 1.6 2 2.4 2.8 3.2 3.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 4 0.28 ID = −3.3 A TJ = 25°C 0.3 0.2 0.1 3 2 4 6 5 7 8 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage TJ = 25°C 0.24 VGS = −2.5 V 0.2 0.16 0.12 VGS = −4.5 V 0.08 0.04 0 0 1 0.8 −25 0 12 16 20 VGS = 0 V TJ = 125°C 1.2 0.6 −50 8 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = −3.3 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1.4 4 −ID, DRAIN CURRENT (AMPS) 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.2 0.8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 16 0 0.4 2 0.4 0 VDS> = −10 V 25 50 75 100 125 150 10 TJ = 100°C 1 0.1 TJ = 25°C 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V VGS = 0 V TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1200 C, CAPACITANCE (pF) Ciss 900 Crss 600 Ciss 300 Coss Crss 0 8 4 −VGS 0 4 8 12 16 20 8 6 QT 4 Qgs 0 0 −IS, SOURCE CURRENT (AMPS) VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 10 ID = −250 mA 1.1 1 0.9 0.8 0.7 25 6 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1.3 0 4 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation −25 2 −VDS 1.2 VDD = −20 V ID = −3.3 A TJ = 25°C 2 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.6 −50 Qgd 50 75 100 125 150 VGS = 0 V TJ = 25°C 8 6 4 2 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 TJ, JUNCTION TEMPERATURE (°C) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1.4 NTGS3441T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 POWER (W) 16 12 8 4 0 0.01 0.10 1.00 10.00 100.00 TIME (sec) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE Figure 11. Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient http://onsemi.com 5 1E+03 NTGS3441T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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