J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) The J212 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Derating over temperature MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage J212 Benefits: High gain Low Leakage Low Noise J212 Applications: General Purpose Amplifiers UHV / VHF Amplifiers Mixers Oscillators J212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐4 IDSS Drain to Source Saturation Current (Note 2) 15 IGSS Gate Reverse Current (Note 3) ‐‐ IG Gate Operating Current (Note 3) ‐‐ rDS(on) Drain to Source On Resistance ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐10 ‐‐ MAX ‐‐ ‐6 40 ‐100 ‐‐ 50 UNITS V ‐55°C to +150°C ‐55°C to +135°C 360mW 3.27 mW/°C 10mA ‐25V CONDITIONS VDS = 0V, IG = ‐1µA VDS = 15V, ID = 1nA VDS = 15V, VGS = 0V VDS = 0V, VGS = ‐15V VDS = 10V, ID = 1mA IG = 1mA, VDS = 0V mA pA pA Ω Click To Buy J212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. gfs Forward Transconductance 7000 ‐‐ gos Output Conductance ‐‐ ‐‐ Ciss Input Capacitance ‐‐ 4 Crss Reverse Transfer Capacitance ‐‐ 1 en Equivalent Noise Voltage ‐‐ 10 MAX 12000 200 ‐‐ ‐‐ ‐‐ J212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS td(on) Turn On Time 2 tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 UNITS µmho CONDITIONS VDS = 15V, VGS = 0V , f = 1kHz pF VDS = 15V, VGS = 0V , f = 1MHz nV/√Hz VDS = 15V, VGS = 0V , f = 1kHz CONDITIONS VDD = 10V VGS(H) = 0V ns See Switching Circuit Note 1 ‐ Absolute maximum ratings are limiting values above which J212 serviceability may be impaired. Note 2 ‐ Pulse test duration = 2ms Note 3 – Approximately doubles for every 10°C increase in TA Micross Components Europe Available Packages: SOT-23 (Top View) J212 in SOT-23 J212 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx