100mA/50V Digital transistors(with built-in resistors) DTC024EM / DTC024EEB / DTC024EUB Dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 48 EMT3F (3) (1) Structure NPN epitaxial planar silicon transistor (Resistor built-in type) (2) Abbreviated symbol : 48 UMT3F (1) 0.65 0.65 1.3 0.53 0.425 2.1 0.9 (3) 1.25 Applications Inverter, Interface, Driver 2.0 0.53 0.425 0.32 (2) 0.13 Abbreviated symbol : 48 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTC024EM DTC024EEB DTC024EUB Equivalent circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - - ○ ○ - OUT R1 IN R2 GND IN OUT GND R1=R2=22k Absolute maximum (Ta=25C) Parameter Symbol Supply voltage VCC Input voltage VIN Collector current *1 Output current Power dissipation *2 Junction temperature Range of storage temperature M Limits(DTC024E□) EB UB 50 40 -10 100 30 IC(max) IO PD Tj Tstg 150 200 150 -55 to +150 Unit V V V mA mA mW C C *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.08 - Rev.A Data Sheet DTC024EM / DTC024EEB / DTC024EUB Electrical characteristics (Ta=25C) Parameter Symbol Input voltage Output voltage Min. Typ. VI(off) - - 0.5 V VCC=5V / IO=100uA VI(on) 3.0 - - V VO=0.3V / IO=5mA VO(on) - 0.05 0.15 V IO=5mA / II=0.5mA II - - 0.36 mA 500 nA VCC=50V / VI=0V Input current Max. Test Conditions Unit VI=5V IO(off) - - DC current gain GI 60 - - - VO=10V / IO=5mA Transition frequency * fT - 250 - MHz VCE=10V /IE=-5mA f=100MHz Input resistance R1 15.4 22 28.6 k Resistance ratio R2/R1 0.8 1.0 1.2 - Output current * Characteristics of built-in transistor Electrical characteristics curves 100 10 VCC=5V 10 OUTPUT CURRENT : IO (mA) INPUT VOLTAGE : VI(on) (V) VO=0.3V Ta=-40ºC Ta=25ºC Ta=75ºC Ta=125ºC 1 0.1 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.1 0.01 0.001 0.1 1 10 100 0 OUTPUT CURRENT : IO (mA) 1 1.5 2 2.5 3 INPUT VOLTAGE : V I(off) (V) Fig.1 Input Voltage vs. Output Current fig.2 Input Voltage vs. Output Current (ON characteristics) (OFF characteristics) 1000 1 OUTPUT VOLTAGE : VO(on) (V) VO=10V DC CURRENT GAIN : GI 0.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 100 10 1 IO/II=10 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.1 0.01 0.001 0.1 1 10 100 0.1 OUTPUT CURRENT : IO (mA) Fig.3 DC Current Gain vs. Output Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 100 OUTPUT CURRNET : IO (mA) Fig.4 Output Voltage vs. Output Current 2/2 2011.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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