JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N03 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU30N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability TO-252-2L 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 30 Pulsed Drain Current IDM 80 Single Pulsed Avalanche Energy* EAS 72 mJ Power Dissipation PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient V A ℃ *EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-3,Nov,2015 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30 Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 2.2 V Static drain-source on-resistance RDS(on) VGS =10V, ID =15A 9 14 mΩ Static drain-source on-resistance RDS(on) VGS =4.5V, ID =15A 11 25 mΩ V On characteristics (note1) 1 Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =15V,VGS =0V, f =1MHz 938 pF 142 99 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf VDS=15V, VGS=10V, ID=20A VDD=15V,ID=2A, VGS=10V,RG=3Ω, RL=0.75Ω 17.5 nC 3 4.1 5 12 ns 19 6 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=10A 1.2 V IS 30 A ISM 80 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A-3,Nov,2015 Typical Characteristics Transfer Characteristics Output Characteristics 20 80 Pulsed VDS=5V VGS= 6,8,10V 70 18 Pulsed 16 14 ID (A) 60 50 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 4.5V 40 30 VGS= 3.5V 12 10 Ta=100℃ Ta=25℃ 8 6 20 4 VGS= 3V 10 2 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 5 0.5 (V) 1.0 1.5 2.0 2.5 3.0 GATE TO SOURCE VOLTAGE VGS 3.5 4.0 (V) RDS(ON)—— VGS RDS(ON) —— ID 34 16 15 14 Ta=25℃ 32 Pulsed 30 Pulsed ID=15A 9 VGS=10V 8 22 ON-RESISTANCE 10 (m) RDS(ON) 11 26 RDS(ON) VGS=4.5V 12 ON-RESISTANCE (m) 28 13 7 6 5 24 20 18 16 Ta=100℃ 14 12 10 8 Ta=25℃ 6 4 4 3 2 2 0.0 0 2.5 5.0 7.5 10.0 12.5 DRAIN CURRENT 15.0 ID 17.5 20.0 22.5 25.0 2 (A) 3 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 25 2.5 Pulsed (V) 2.0 VTH 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 10 0.1 0.01 1E-3 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 800 1000 ID=250uA 1.5 1.0 0.5 0.0 25 1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-3,Nov,2015 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Max. Min. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 4 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. A-3,Nov,2015 To-252(4R)-2L Tape and Reel www.cj-elec.com 5 A-3,Nov,2015