TI LM3410XSDX 525khz/1.6mhz, constant current boost and sepic led driver with internal compensation Datasheet

LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal
Compensation
Check for Samples: LM3410, LM3410Q
FEATURES
DESCRIPTION
•
•
•
•
•
The LM3410 constant current LED driver is a
monolithic, high frequency, PWM DC/DC converter in
5-pin
1
23
•
•
•
•
•
•
Space Saving SOT-23 and WSON Packages
Input Voltage Range of 2.7V to 5.5V
Output Voltage Range of 3V to 24V
2.8A Typical Switch Current
High Switching Frequency
– 525 KHz (LM3410Y)
– 1.6 MHz (LM3410X)
170 mΩ NMOS Switch
190 mV Internal Voltage Reference
Internal Soft-Start
Current-Mode, PWM Operation
Thermal Shutdown
LM3410Q is AEC-Q100 Grade 1 Qualified and
is Manufactured on an Automotive Grade Flow
SOT-23, 6-pin WSON, and 8-pin MSOP-PowerPad™
packages. With a minimum of external components
the LM3410 is easy to use. It can drive 2.8A typical
peak currents with an internal 170 mΩ NMOS switch.
Switching frequency is internally set to either 525 kHz
or 1.60 MHz, allowing the use of extremely small
surface mount inductors and chip capacitors. Even
though the operating frequency is high, efficiencies
up to 88% are easy to achieve. External shutdown is
included, featuring an ultra-low standby current of 80
nA. The LM3410 utilizes current-mode control and
internal compensation to provide high-performance
over a wide range of operating conditions. Additional
features include dimming, cycle-by-cycle current limit,
and thermal shutdown.
APPLICATIONS
•
•
•
•
•
LED Backlight Current Source
LiIon Backlight OLED and HB LED Driver
Handheld Devices
LED Flash Driver
Automotive
Typical Boost Application Circuit
L1
D1
VIN
4
DIM
5
C1
VIN
3
LM3410
DIMM
FB
2
LEDs
C2
GND
1
SW
R1
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPad is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Connection Diagram
SW 1
5
VIN
PGND
1
6
SW
VIN
2
5
AGND
GND 2
FB
3
4
NC
1
8
NC
PGND
2
7
SW
VIN
3
6
AGND
DIM
4
5
FB
DIM
DIM
Figure 1. 5-Pin SOT-23 (Top
View)
See DBV Package
3
4
FB
Figure 2. 6-Pin WSON (Top View)
See NGG0006A Package
Figure 3. 8-Pin MSOP-PowerPad
(Top View)
See GDN0008A Package
Table 1. Pin Descriptions - 5-Pin SOT-23
Pin
Name
Function
1
SW
2
GND
Output switch. Connect to the inductor, output diode.
3
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
4
DIM
Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin
to float or be greater than VIN + 0.3V.
5
VIN
Supply voltage pin for power stage, and input supply voltage.
Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this pin.
Table 2. Pin Descriptions - 6-Pin WSON
2
Pin
Name
Function
1
PGND
Power ground pin. Place PGND and output capacitor GND close together.
2
VIN
Supply voltage for power stage, and input supply voltage.
3
DIM
Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin
to float or be greater than VIN + 0.3V.
4
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
5
AGND
6
SW
DAP
GND
Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin and pin 4.
Output switch. Connect to the inductor, output diode.
Signal and Power ground. Connect to pin 1 and pin 5 on top layer. Place 4-6 vias from DAP to bottom layer GND
plane.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Table 3. Pin Descriptions - 8-Pin MSOP-PowerPad
Pin
Name
1
-
Function
2
PGND
3
VIN
Supply voltage for power stage, and input supply voltage.
4
DIM
Dimming and shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow this pin
to float or be greater than VIN + 0.3V.
5
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
6
AGND
7
SW
8
-
DAP
GND
No Connect
Power ground pin. Place PGND and output capacitor GND close together.
Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin and pin 5
Output switch. Connect to the inductor, output diode.
No Connect
Signal and Power ground. Connect to pin 2 and pin 6 on top layer. Place 4-6 vias from DAP to bottom layer GND
plane.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
VIN
-0.5V to 7V
SW Voltage
-0.5V to 26.5V
FB Voltage
-0.5V to 3.0V
DIM Voltage
ESD Susceptibility
-0.5V to 7.0V
(3)
Junction Temperature
Human Body Model
150°C
Storage Temp. Range
-65°C to 150°C
Soldering Information
(1)
(2)
(3)
(4)
Infrared/Convection Reflow (15sec)
(1)
VIN
2.7V to 5.5V
VDIM
(2)
0V to VIN
VSW
3V to 24V
Junction Temperature Range
-40°C to 125°C
Power Dissipation
(Internal) SOT-23
(2)
220°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,
see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test method is per JESD22-A114.
Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device.
Operating Ratings
(1)
2kV
(4)
400 mW
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,
see the Electrical Characteristics.
Do not allow this pin to float or be greater than VIN +0.3V.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
3
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to 125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. VIN = 5V, unless otherwise
indicated under the Conditions column.
Symbol
VFB
ΔVFB/VIN
Parameter
Feedback Voltage Line Regulation
Feedback Input Bias Current
FSW
Switching Frequency
DMAX
Maximum Duty Cycle
DMIN
Minimum Duty Cycle
Switch On Resistance
ICL
Switch Current Limit
SU
Start Up Time
IQ
VDIM_H
(1)
(2)
4
Typ
Max
178
190
202
mV
-
0.06
-
%/V
-
0.1
1
µA
LM3410X
1200
1600
2000
LM3410Y
360
525
680
LM3410X
88
92
-
LM3410Y
90
95
-
LM3410X
-
5
-
LM3410Y
-
2
-
SOT-23 and MSOP-PowerPad
-
170
330
190
350
2.1
2.80
-
A
-
20
-
µs
LM3410X VFB = 0.25
-
7.0
11
LM3410Y VFB = 0.25
-
3.4
7
All Options VDIM = 0V
-
80
-
VIN Rising
-
2.3
2.65
VIN Falling
1.7
1.9
-
-
-
0.4
1.8
-
-
VIN = 2.7V to 5.5V
WSON
Quiescent Current (switching)
Quiescent Current (shutdown)
UVLO
Min
Feedback Voltage
IFB
RDS(ON)
Conditions
Undervoltage Lockout
Shutdown Threshold Voltage
Enable Threshold Voltage
Units
kHz
%
%
mΩ
mA
nA
V
V
ISW
Switch Leakage
VSW = 24V
-
1.0
-
µA
IDIM
Dimming Pin Current
Sink/Source
-
100
-
nA
θJA
Junction to Ambient
0 LFPM Air Flow (1)
WSON and MSOP-PowerPad Packages
-
80
-
SOT-23 Package
-
118
-
θJC
Junction to Case
WSON and MSOP-PowerPad Packages
-
18
-
SOT-23 Package
-
60
-
TSD
Thermal Shutdown Temperature
-
165
-
(1)
(2)
°C/W
°C/W
°C
Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.
Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Typical Performance Characteristics
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Application Information section of this
datasheet. TJ = 25C, unless otherwise specified.
LM3410X Efficiency vs VIN (RSET = 4Ω)
LM3410X Start-Up Signature
Figure 4.
Figure 5.
4 x 3.3V LEDs 500 Hz DIM FREQ D = 50%
DIM Freq and Duty Cycle vs Avg I-LED
Figure 6.
Figure 7.
Current Limit vs Temperature
RDSON vs Temperature
Figure 8.
Figure 9.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
5
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Application Information section of this
datasheet. TJ = 25C, unless otherwise specified.
Oscillator Frequency vs Temperature - "X"
Oscillator Frequency vs Temperature - "Y"
Figure 10.
Figure 11.
VFB vs Temperature
Figure 12.
6
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Simplified Internal Block Diagram
DIM
VIN
ThermalSHDN
Control Logic
+
RampArtificial
UVLO = 2.3V
Oscillator
+
-
cv
1.6 MHz
+
S
R
SW
+
NMOS
+
R
Q
-
VFB
+
VREF = 190 mV
Internal
Compensation
ILIMIT
ISENSE
+
GND
Figure 13. Simplified Block Diagram
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
7
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
APPLICATION INFORMATION
THEORY OF OPERATION
The LM3410 is a constant frequency PWM, boost regulator IC. It delivers a minimum of 2.1A peak switch
current. The device operates very similar to a voltage regulated boost converter except that it regulates the
output current through LEDs. The current magnitude is set with a series resistor. This series resistor multiplied by
the LED current creates the feedback voltage (190 mV) which the converter regulates to. The regulator has a
preset switching frequency of either 525 kHz or 1.60 MHz. This high frequency allows the LM3410 to operate
with small surface mount capacitors and inductors, resulting in a DC/DC converter that requires a minimum
amount of board space. The LM3410 is internally compensated, so it is simple to use, and requires few external
components. The LM3410 uses current-mode control to regulate the LED current. The following operating
description of the LM3410 will refer to the Simplified Block Diagram (Figure 13) the simplified schematic
(Figure 14), and its associated waveforms (Figure 15). The LM3410 supplies a regulated LED current by
switching the internal NMOS control switch at constant frequency and variable duty cycle. A switching cycle
begins at the falling edge of the reset pulse generated by the internal oscillator. When this pulse goes low, the
output control logic turns on the internal NMOS control switch. During this on-time, the SW pin voltage (VSW)
decreases to approximately GND, and the inductor current (IL) increases with a linear slope. IL is measured by
the current sense amplifier, which generates an output proportional to the switch current. The sensed signal is
summed with the regulator’s corrective ramp and compared to the error amplifier’s output, which is proportional
to the difference between the feedback voltage and VREF. When the PWM comparator output goes high, the
output switch turns off until the next switching cycle begins. During the switch off-time, inductor current
discharges through diode D1, which forces the SW pin to swing to the output voltage plus the forward voltage
(VD) of the diode. The regulator loop adjusts the duty cycle (D) to maintain a regulated LED current.
IL
L1
D1
Q1
VIN
Control
+
VSW
-
VO
IC
C1
ILED
Figure 14. Simplified Boost Topology Schematic
8
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
VOUT + VD
Vsw (t)
t
VIN
VL(t)
t
VIN - VOUT - VD
I L (t)
iL
t
I DIODE (t)
t
( iL
- - i OUT
)
I Capacitor (t)
t
- i OUT
'v
VOUT (t)
DTS
TS
Figure 15. Typical Waveforms
CURRENT LIMIT
The LM3410 uses cycle-by-cycle current limiting to protect the internal NMOS switch. It is important to note that
this current limit will not protect the output from excessive current during an output short circuit. The input supply
is connected to the output by the series connection of an inductor and a diode. If a short circuit is placed on the
output, excessive current can damage both the inductor and diode.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
9
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Design Guide
SETTING THE LED CURRENT
ILED
VFB
RSET
Figure 16. Setting ILED
The LED current is set using the following equation:
VFB
= ILED
RSET
where
•
RSET is connected between the FB pin and GND.
(1)
DIM PIN / SHUTDOWN MODE
The average LED current can be controlled using a PWM signal on the DIM pin. The duty cycle can be varied
between 0 and 100% to either increase or decrease LED brightness. PWM frequencies in the range of 1 Hz to
25 kHz can be used. For controlling LED currents down to the µA levels, it is best to use a PWM signal
frequency between 200 and 1 kHz. The maximum LED current would be achieved using a 100% duty cycle, i.e.
the DIM pin always high.
LED-DRIVE CAPABILITY
When using the LM3410 in the typical application configuration, with LEDs stacked in series between the VOUT
and FB pin, the maximum number of LEDs that can be placed in series is dependent on the maximum LED
forward voltage (VFMAX).
(VFMAX x NLEDs) + 190 mV < 24V
(2)
When inserting a value for maximum VFMAX the LED forward voltage variation over the operating temperature
range should be considered.
THERMAL SHUTDOWN
Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature
exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature
drops to approximately 150°C.
INDUCTOR SELECTION
The inductor value determines the input ripple current. Lower inductor values decrease the physical size of the
inductor, but increase the input ripple current. An increase in the inductor value will decrease the input ripple
current.
10
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
'i L
I L (t)
iL
VIN
L
VIN - VOUT
L
DTS
TS
t
Figure 17. Inductor Current
2'iL § VIN ·
=
¸
DTS ¨© L ¹
§ VIN ·
¸ x DTS
'iL = ¨
© 2L ¹
(3)
The Duty Cycle (D) for a Boost converter can be approximated by using the ratio of output voltage (VOUT) to input
voltage (VIN).
VOUT
VIN
§ 1 · 1
=¨
¸= c
©1 - D¹ D
(4)
Therefore:
D=
VOUT - VIN
VOUT
(5)
Power losses due to the diode (D1) forward voltage drop, the voltage drop across the internal NMOS switch, the
voltage drop across the inductor resistance (RDCR) and switching losses must be included to calculate a more
accurate duty cycle (See Calculating Efficiency and Junction Temperature for a detailed explanation). A more
accurate formula for calculating the conversion ratio is:
K
VOUT
=
VIN
'¶
Where
•
η equals the efficiency of the LM3410 application.
(6)
Or:
K=
VOUT x ILED
VIN x IIN
(7)
Therefore:
D=
VOUT - KVIN
VOUT
(8)
Inductor ripple in a LED driver circuit can be greater than what would normally be allowed in a voltage regulator
Boost and Sepic design. A good design practice is to allow the inductor to produce 20% to 50% ripple of
maximum load. The increased ripple shouldn’t be a problem when illuminating LEDs.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
11
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
From the previous equations, the inductor value is then obtained.
§ VIN ·
L= ¨
¸ x DTS
©2'iL¹
(9)
Where
1/TS = fSW
(10)
One must also ensure that the minimum current limit (2.1A) is not exceeded, so the peak current in the inductor
must be calculated. The peak current (Lpk I) in the inductor is calculated by:
ILpk = IIN + ΔIL or ILpk = IOUT /D' + ΔiL
(11)
When selecting an inductor, make sure that it is capable of supporting the peak input current without saturating.
Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating
correctly. Because of the speed of the internal current limit, the peak current of the inductor need only be
specified for the required maximum input current. For example, if the designed maximum input current is 1.5A
and the peak current is 1.75A, then the inductor should be specified with a saturation current limit of >1.75A.
There is no need to specify the saturation or peak current of the inductor at the 2.8A typical switch current limit.
Because of the operating frequency of the LM3410, ferrite based inductors are preferred to minimize core losses.
This presents little restriction since the variety of ferrite-based inductors is huge. Lastly, inductors with lower
series resistance (DCR) will provide better operating efficiency. For recommended inductors see Example
Circuits.
INPUT CAPACITOR
An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The
primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent
Series Inductance). The recommended input capacitance is 2.2 µF to 22 µF depending on the application. The
capacitor manufacturer specifically states the input voltage rating. Make sure to check any recommended
deratings and also verify if there is any significant change in capacitance at the operating input voltage and the
operating temperature. The ESL of an input capacitor is usually determined by the effective cross sectional area
of the current path. At the operating frequencies of the LM3410, certain capacitors may have an ESL so large
that the resulting impedance (2πfL) will be higher than that required to provide stable operation. As a result,
surface mount capacitors are strongly recommended. Multilayer ceramic capacitors (MLCC) are good choices for
both input and output capacitors and have very low ESL. For MLCCs it is recommended to use X7R or X5R
dielectrics. Consult capacitor manufacturer datasheet to see how rated capacitance varies over operating
conditions.
OUTPUT CAPACITOR
The LM3410 operates at frequencies allowing the use of ceramic output capacitors without compromising
transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple.
The output capacitor is selected based upon the desired output ripple and transient response. The initial current
of a load transient is provided mainly by the output capacitor. The output impedance will therefore determine the
maximum voltage perturbation. The output ripple of the converter is a function of the capacitor’s reactance and
its equivalent series resistance (ESR):
§
'VOUT = 'iL x RESR + ¨
©
VOUT x D
·
2 x fSW x ROUT x COUT ¸
¹
(12)
When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the
output ripple will be approximately sinusoidal and 90° phase shifted from the switching action.
Given the availability and quality of MLCCs and the expected output voltage of designs using the LM3410, there
is really no need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability
to bypass high frequency noise. A certain amount of switching edge noise will couple through parasitic
capacitances in the inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not.
Since the output capacitor is one of the two external components that control the stability of the regulator control
loop, most applications will require a minimum at 0.47 µF of output capacitance. Like the input capacitor,
recommended multilayer ceramic capacitors are X7R or X5R. Again, verify actual capacitance at the desired
operating voltage and temperature.
12
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
DIODE
The diode (D1) conducts during the switch off time. A Schottky diode is recommended for its fast switching times
and low forward voltage drop. The diode should be chosen so that its current rating is greater than:
ID1 ≥ IOUT
(13)
The reverse breakdown rating of the diode must be at least the maximum output voltage plus appropriate margin.
OUTPUT OVER-VOLTAGE PROTECTION
A simple circuit consisting of an external zener diode can be implemented to protect the output and the LM3410
device from an over-voltage fault condition. If an LED fails open, or is connected backwards, an output open
circuit condition will occur. No current is conducted through the LED’s, and the feedback node will equal zero
volts. The LM3410 will react to this fault by increasing the duty-cycle, thinking the LED current has dropped. A
simple circuit that protects the LM3410 is shown in Figure 18.
Zener diode D2 and resistor R3 is placed from VOUT in parallel with the string of LEDs. If the output voltage
exceeds the breakdown voltage of the zener diode, current is drawn through the zener diode, R3 and sense
resistor R1. Once the voltage across R1 and R3 equals the feedback voltage of 190 mV, the LM3410 will limit its
duty-cycle. No damage will occur to the LM3410, the LED’s, or the zener diode. Once the fault is corrected, the
application will work as intended.
VSW
D1
O
V
P
VFB
L EDs
D2
C2
R3
R1
Figure 18. Overvoltage Protection Circuit
PCB Layout Considerations
When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The
most important consideration when completing a Boost Converter layout is the close coupling of the GND
connections of the COUT capacitor and the LM3410 PGND pin. The GND ends should be close to one another
and be connected to the GND plane with at least two through-holes. There should be a continuous ground plane
on the bottom layer of a two-layer board except under the switching node island. The FB pin is a high impedance
node and care should be taken to make the FB trace short to avoid noise pickup and inaccurate regulation. The
RSET feedback resistor should be placed as close as possible to the IC, with the AGND of RSET (R1) placed as
close as possible to the AGND (pin 5 for the WSON) of the IC. Radiated noise can be decreased by choosing a
shielded inductor. The remaining components should also be placed as close as possible to the IC. Please see
TI Lit Number SNVA054 for further considerations and the LM3410 demo board as an example of a four-layer
layout.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
13
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Below is an example of a good thermal and electrical PCB design.
LEDs
PCB
R1
PGND
DIM
FB
4
3
AGND
5
C2
2
VIN
VSW
VO
6
1
PGND
D1
C1
SW
L1
Figure 19. Boost PCB Layout Guidelines
This is very similar to our LM3410 demonstration boards that are obtainable via the Texas Instruments website.
The demonstration board consists of a two layer PCB with a common input and output voltage application. Most
of the routing is on the top layer, with the bottom layer consisting of a large ground plane. The placement of the
external components satisfies the electrical considerations, and the thermal performance has been improved by
adding thermal vias and a top layer “Dog-Bone”.
For certain high power applications, the PCB land may be modified to a "dog bone" shape (see Figure 20).
Increasing the size of ground plane and adding thermal vias can reduce the RθJA for the application.
COPPER
PGND 1
6
SW
VIN
2
5
AGND
DIM
3
4
FB
COPPER
Figure 20. PCB Dog Bone Layout
Thermal Design
When designing for thermal performance, one must consider many variables:
Ambient Temperature: The surrounding maximum air temperature is fairly explanatory. As the temperature
increases, the junction temperature will increase. This may not be linear though. As the surrounding air
temperature increases, resistances of semiconductors, wires and traces increase. This will decrease the
efficiency of the application, and more power will be converted into heat, and will increase the silicon junction
temperatures further.
Forced Airflow: Forced air can drastically reduce the device junction temperature. Air flow reduces the hot spots
within a design. Warm airflow is often much better than a lower ambient temperature with no airflow.
14
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
External Components: Choose components that are efficient, and you can reduce the mutual heating between
devices.
PCB design with thermal performance in mind:
The PCB design is a very important step in the thermal design procedure. The LM3410 is available in three
package options (5-pin SOT-23, 8-pin MSOP-PowerPad and 6-pin WSON). The options are electrically the
same, but difference between the packages is size and thermal performance. The WSON and MSOP-PowerPad
have thermal Die Attach Pads (DAP) attached to the bottom of the packages, and are therefore capable of
dissipating more heat than the SOT-23 package. It is important that the customer choose the correct package for
the application. A detailed thermal design procedure has been included in this data sheet. This procedure will
help determine which package is correct, and common applications will be analyzed.
There is one significant thermal PCB layout design consideration that contradicts a proper electrical PCB layout
design consideration. This contradiction is the placement of external components that dissipate heat. The
greatest external heat contributor is the external Schottky diode. It would be nice if you were able to separate by
distance the LM3410 from the Schottky diode, and thereby reducing the mutual heating effect. This will however
create electrical performance issues. It is important to keep the LM3410, the output capacitor, and Schottky
diode physically close to each other (see PCB layout guidelines). The electrical design considerations outweigh
the thermal considerations. Other factors that influence thermal performance are thermal vias, copper weight,
and number of board layers.
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
15
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Thermal Definitions
Heat energy is transferred from regions of high temperature to regions of low temperature via three basic
mechanisms: radiation, conduction and convection.
Radiation: Electromagnetic transfer of heat between masses at different temperatures.
Conduction: Transfer of heat through a solid medium.
Convection: Transfer of heat through the medium of a fluid; typically air.
Conduction and Convection will be the dominant heat transfer mechanism in most applications.
RθJA: Thermal impedance from silicon junction to ambient air temperature.
RθJC: Thermal impedance from silicon junction to device case temperature.
CθJC: Thermal Delay from silicon junction to device case temperature.
CθCA: Thermal Delay from device case to ambient air temperature.
RθJA and RθJC: These two symbols represent thermal impedances, and most data sheets contain associated
values for these two symbols. The units of measurement are °C/Watt.
RθJA is the sum of smaller thermal impedances (see simplified thermal model Figure 21 and Figure 22).
Capacitors within the model represent delays that are present from the time that power and its associated
heat is increased or decreased from steady state in one medium until the time that the heat increase or
decrease reaches steady state in the another medium.
The datasheet values for these symbols are given so that one might compare the thermal performance of one
package against another. To achieve a comparison between packages, all other variables must be held constant
in the comparison (PCB size, copper weight, thermal vias, power dissipation, VIN, VOUT, load current etc). This
does shed light on the package performance, but it would be a mistake to use these values to calculate the
actual junction temperature in your application.
LM3410 Thermal Models
Heat is dissipated from the LM3410 and other devices. The external loss elements include the Schottky diode,
inductor, and loads. All loss elements will mutually increase the heat on the PCB, and therefore increase each
other’s temperatures.
L1
D1
IL(t)
VOUT(t)
VIN
Q1
C1
Figure 21. Thermal Schematic
16
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
RTCASE-AMB
TCASE
CTCASE-AMB
RTJ-CASE
CTJ-CASE
INTERNAL
PDISS
SMALL
LARGE
PDISS-TOP
TAMBIENT
PDISS-PCB
TJUNCTION
RTJ-PCB
CTJ-PCB
DEVICE
EXTERNAL
PDISS
RTPCB-AMB
TPCB
CTPCB-AMB
PCB
Figure 22. Associated Thermal Model
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
17
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Calculating Efficiency and Junction Temperature
We will talk more about calculating proper junction temperature with relative certainty in a moment. For now we
need to describe how to calculate the junction temperature and clarify some common misconceptions.
TJ - TA
RTJA =
PDissipation
(14)
A common error when calculating RθJA is to assume that the package is the only variable to consider.
RθJA [variables]:
• Input Voltage, Output Voltage, Output Current, RDS(ON)
• Ambient temperature and air flow
• Internal and External components power dissipation
• Package thermal limitations
• PCB variables (copper weight, thermal via’s, layers component placement)
Another common error when calculating junction temperature is to assume that the top case temperature is the
proper temperature when calculating RθJC. RθJC represents the thermal impedance of all six sides of a package,
not just the top side. This document will refer to a thermal impedance called RΨJC. RΨJC represents a thermal
impedance associated with just the top case temperature. This will allow one to calculate the junction
temperature with a thermal sensor connected to the top case.
The complete LM3410 Boost converter efficiency can be calculated in the following manner.
POUT
K=
PIN
or
K=
POUT
POUT + PLOSS
(15)
Power loss (PLOSS) is the sum of two types of losses in the converter, switching and conduction. Conduction
losses usually dominate at higher output loads, where as switching losses remain relatively fixed and dominate at
lower output loads.
Losses in the LM3410 Device:
PLOSS = PCOND + PSW + PQ
Where
•
PQ = quiescent operating power loss
(16)
Conversion ratio of the Boost Converter with conduction loss elements inserted:
VOUT
VIN
§
·
¨
¸
c
·
§
1
¸
1 ¨ D x VD ¸ ¨
1=
¨
¸
¨
c
+ (D x R DSON) ¸
R
D ©
VIN ¹
¨ 1 + DCR
¸
¨
¸
2
c
R
D
©
¹
OUT
Where
•
ROUT =
RDCR = Inductor series resistance
(17)
VOUT
ILED
(18)
One can see that if the loss elements are reduced to zero, the conversion ratio simplifies to:
18
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
VOUT
VIN
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
1
=
'¶
(19)
And we know:
VOUT
VIN
=
K
'¶
(20)
Therefore:
K = Dc
VOUT
VIN
§
Dc x VD
·
1¨
¸
V
¨
¸
IN
=¨
+ (D x R DSON) ¸
R
¨ 1 + DCR
¸
¨
¸
2
c
R
D
¹
©
OUT
(21)
Calculations for determining the most significant power losses are discussed below. Other losses totaling less
than 2% are not discussed.
A simple efficiency calculation that takes into account the conduction losses is shown below:
§
Dc x VD
·
1¨
¸
V
¨
¸
IN
K|¨
+ (D x R DSON) ¸
R
¨ 1 + DCR
¸
¨
¸
2
c
R
D
¹
©
OUT
(22)
The diode, NMOS switch, and inductor DCR losses are included in this calculation. Setting any loss element to
zero will simplify the equation.
VD is the forward voltage drop across the Schottky diode. It can be obtained from the manufacturer’s Electrical
Characteristics section of the data sheet.
The conduction losses in the diode are calculated as follows:
PDIODE = VD x ILED
(23)
Depending on the duty cycle, this can be the single most significant power loss in the circuit. Care should be
taken to choose a diode that has a low forward voltage drop. Another concern with diode selection is reverse
leakage current. Depending on the ambient temperature and the reverse voltage across the diode, the current
being drawn from the output to the NMOS switch during time D could be significant, this may increase losses
internal to the LM3410 and reduce the overall efficiency of the application. Refer to Schottky diode
manufacturer’s data sheets for reverse leakage specifications, and typical applications within this data sheet for
diode selections.
Another significant external power loss is the conduction loss in the input inductor. The power loss within the
inductor can be simplified to:
PIND = IIN2RDCR
(24)
Or
§I 2 R
·
PIND = ¨ O DCR ¸
¨ D' ¸
©
¹
(25)
The LM3410 conduction loss is mainly associated with the internal power switch:
PCOND-NFET = I2SW-rms x RDSON x D
(26)
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
19
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
'i
IIN
ISW(t)
t
Figure 23. LM3410 Switch Current
Isw-rms = IIND D x 1 + 1
3
'i
IIND
2
| IIND
D
(27)
(small ripple approximation)
PCOND-NFET = IIN2 x RDSON x D
(28)
Or
2
§I ·
PCOND - NFET = ¨ LED¸ x RDSON x D
© D' ¹
(29)
The value for RDSON should be equal to the resistance at the junction temperature you wish to analyze. As an
example, at 125°C and RDSON = 250 mΩ (See typical graphs for value).
Switching losses are also associated with the internal power switch. They occur during the switch on and off
transition periods, where voltages and currents overlap resulting in power loss.
The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the
switch at the switch node:
PSWR = 1/2(VOUT x IIN x fSW x tRISE)
PSWF = 1/2(VOUT x IIN x fSW x tFALL)
PSW = PSWR + PSWF
(30)
(31)
(32)
Table 4. Typical Switch-Node Rise and Fall Times
VIN
VOUT
tRISE
tFALL
3V
5V
6nS
4nS
5V
12V
6nS
5nS
3V
12V
8nS
7nS
5V
18V
10nS
8nS
Quiescent Power Losses
IQ is the quiescent operating current, and is typically around 1.5 mA.
PQ = IQ x VIN
(33)
RSET Power Loss
PRSET =
VFB2
RSET
(34)
Example Efficiency Calculation:
Operating Conditions:
5 x 3.3V LEDs + 190mVREF ≊ 16.7V
20
(35)
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Table 5. Operating Conditions
VIN
3.3V
VOUT
16.7V
ILED
50mA
VD
0.45V
fSW
1.60MHz
IQ
3mA
tRISE
10nS
tFALL
10nS
RDSON
225mΩ
LDCR
75mΩ
D
0.82
IIN
0.31A
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
(36)
Quiescent Power Loss:
PQ = IQ x VIN = 10 mW
(37)
Switching Power Loss:
PSWR = 1/2(VOUT x IIN x fSW x tRISE) ≊ 40 mW
PSWF = 1/2(VOUT x IIN x fSW x tFALL) ≊ 40 mW
PSW = PSWR + PSWF = 80 mW
(38)
(39)
(40)
Internal NFET Power Loss:
RDSON = 225 mΩ
PCONDUCTION = IIN2 x D x RDSON = 17 mW
IIN = 310 mA
(41)
(42)
(43)
Diode Loss:
VD = 0.45V
PDIODE = VD x ILED = 23 mW
(44)
(45)
Inductor Power Loss:
RDCR = 75 mΩ
PIND = IIN2 x RDCR = 7 mW
(46)
(47)
Total Power Losses are:
Table 6. Power Loss Tabulation
VIN
3.3V
VOUT
16.7V
ILED
50mA
POUT
825W
VD
0.45V
PDIODE
23mW
fSW
1.6MHz
IQ
10nS
PSWR
40mW
tRISE
10nS
PSWF
40mW
IQ
3mA
PQ
10mW
RDSON
225mΩ
PCOND
17mW
LDCR
75mΩ
PIND
7mW
D
0.82
η
85%
PLOSS
137mW
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
21
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
PINTERNAL = PCOND + PSW = 107 mW
(48)
Calculating RθJA and RΨJC
TJ - TCase
TJ - TA
: R <JC =
R TJA =
PDissipation
PDissipation
(49)
We now know the internal power dissipation, and we are trying to keep the junction temperature at or below
125°C. The next step is to calculate the value for RθJA and/or RΨJC. This is actually very simple to accomplish,
and necessary if you think you may be marginal with regards to thermals or determining what package option is
correct.
The LM3410 has a thermal shutdown comparator. When the silicon reaches a temperature of 165°C, the device
shuts down until the temperature drops to 150°C. Knowing this, one can calculate the RθJA or the RΨJC of a
specific application. Because the junction to top case thermal impedance is much lower than the thermal
impedance of junction to ambient air, the error in calculating RΨJC is lower than for RθJA . However, you will need
to attach a small thermocouple onto the top case of the LM3410 to obtain the RΨJC value.
Knowing the temperature of the silicon when the device shuts down allows us to know three of the four variables.
Once we calculate the thermal impedance, we then can work backwards with the junction temperature set to
125°C to see what maximum ambient air temperature keeps the silicon below the 125°C temperature.
Procedure:
Place your application into a thermal chamber. You will need to dissipate enough power in the device so you can
obtain a good thermal impedance value.
Raise the ambient air temperature until the device goes into thermal shutdown. Record the temperatures of the
ambient air and/or the top case temperature of the LM3410. Calculate the thermal impedances.
Example from previous calculations (SOT-23 Package):
PINTERNAL = 107 mW
TA @ Shutdown = 155°C
TC @ Shutdown = 159°C
R TJA =
TJ - TA
PDissipation
: R <JC =
(50)
(51)
(52)
TJ - TCase-Top
PDissipation
RθJA SOT-23 = 93°C/W
RΨJC SOT-23 = 56°C/W
(53)
(54)
(55)
Typical WSON and MSOP-PowerPad typical applications will produce RθJA numbers in the range of 50°C/W to
65°C/W, and RΨJC will vary between 18°C/W and 28°C/W. These values are for PCB’s with two and four layer
boards with 0.5 oz copper, and four to six thermal vias to bottom side ground plane under the DAP. The thermal
impedances calculated above are higher due to the small amount of power being dissipated within the device.
Note: To use these procedures it is important to dissipate an amount of power within the device that will indicate
a true thermal impedance value. If one uses a very small internal dissipated value, one can see that the thermal
impedance calculated is abnormally high, and subject to error. Figure 24 shows the nonlinear relationship of
internal power dissipation vs . RθJA.
22
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Figure 24. RθJA vs Internal Dissipation
For 5-pin SOT-23 package typical applications, RθJA numbers will range from 80°C/W to 110°C/W, and RΨJC will
vary between 50°C/W and 65°C/W. These values are for PCB’s with two and four layer boards with 0.5 oz
copper, with two to four thermal vias from GND pin to bottom layer.
Here is a good rule of thumb for typical thermal impedances, and an ambient temperature maximum of 75°C: If
your design requires that you dissipate more than 400mW internal to the LM3410, or there is 750mW of total
power loss in the application, it is recommended that you use the 6-pin WSON or the 8-pin MSOP-PowerPad
package with the exposed DAP.
SEPIC Converter
The LM3410 can easily be converted into a SEPIC converter. A SEPIC converter has the ability to regulate an
output voltage that is either larger or smaller in magnitude than the input voltage. Other converters have this
ability as well (CUK and Buck-Boost), but usually create an output voltage that is opposite in polarity to the input
voltage. This topology is a perfect fit for Lithium Ion battery applications where the input voltage for a single cell
Li-Ion battery will vary between 2.7V and 4.5V and the output voltage is somewhere in between. Most of the
analysis of the LM3410 Boost Converter is applicable to the LM3410 SEPIC Converter.
SEPIC Design Guide:
SEPIC Conversion ratio without loss elements:
VOUT
VIN
=
D
'¶
(56)
Therefore:
D=
VOUT
VOUT + VIN
(57)
Small ripple approximation:
In a well-designed SEPIC converter, the output voltage, and input voltage ripple, the inductor ripple IL1 and IL2 is
small in comparison to the DC magnitude. Therefore it is a safe approximation to assume a DC value for these
components. The main objective of the Steady State Analysis is to determine the steady state duty-cycle, voltage
and current stresses on all components, and proper values for all components.
In a steady-state converter, the net volt-seconds across an inductor after one cycle will equal zero. Also, the
charge into a capacitor will equal the charge out of a capacitor in one cycle.
Therefore:
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
23
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
I L2
www.ti.com
§ D' ·
= ¨ ¸ x I L1
© D¹
and
IL1 =
§D· x
¨ D' ¸
© ¹
ILED
(58)
Substituting IL1 into IL2
IL2 = ILED
(59)
The average inductor current of L2 is the average output load.
VL(t)
AREA 1
t (s)
AREA 2
DTS
TS
Figure 25. Inductor Volt-Sec Balance Waveform
Applying Charge balance on C1:
VC3 =
D' ( VOUT)
D
(60)
Since there are no DC voltages across either inductor, and capacitor C3 is connected to Vin through L1 at one
end, or to ground through L2 on the other end, we can say that
VC3 = VIN
(61)
Therefore:
VIN =
D' ( VOUT)
D
(62)
This verifies the original conversion ratio equation.
It is important to remember that the internal switch current is equal to IL1 and IL2 during the D interval. Design the
converter so that the minimum ensured peak switch current limit (2.1A) is not exceeded.
24
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
VIN
L1
LM3410
C1
1
6
2
5
3
4
VO
D1
C3
C2
L2
HB/OLED
R2
R1
Figure 26. HB/OLED SEPIC CONVERTER Schematic
Steady State Analysis with Loss Elements
i L1( t )
i sw
iC1( t )
vC1( t )
+
i D1( t )
vD1( t )
i L 2( t )
VIN
i C2( t )
vL2( t )
+
-
+
R L1
vL1( t )
+
vC2( t )
vO( t )
-
+
R on
R L2
Figure 27. SEPIC Simplified Schematic
Using inductor volt-second balance and capacitor charge balance, the following equations are derived:
IL2 = (ILED)
(63)
and
IL1 = (ILED) x (D/D')
VOUT
VIN
§D·
= ¨¨ ' ¸¸
©D ¹
(64)
§
·
¨
¸
1
¨
¸
¨
¸
2·
§
§
·
·
§
V
R
R
¨ ¨1+ D + R L2 ¸ + ¨ D ¸ §¨ ON ·¸ + ¨ D ¸ §¨ L1 ·¸¸
¨ ¨© VOUT R ¸¹ ¨ ' 2 ¸ © R ¹ ¨ ' 2 ¸ © R ¹¸
©D ¹
©D ¹
¨
¸
©
¹
(65)
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
25
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
ROUT =
www.ti.com
VOUT
ILED
(66)
Therefore:
§
·
¨
¸
1
¨
¸
K=
¨§
¸
2·
§
§
·
·
V
R
R
R
D
D
§
·
·
§
¸ ¨ L1 ¸ ¸
¸ ¨ ON ¸ + ¨
¨ ¨1+ D + L2 ¸ + ¨
¨ ¨© VOUT ROUT¸¹ ¨ D' 2 ¸ ©ROUT ¹ ¨ D' 2 ¸ ©ROUT¹ ¸
©
©
¹
¹
¨
¸
©
¹
(67)
One can see that all variables are known except for the duty cycle (D). A quadratic equation is needed to solve
for D. A less accurate method of determining the duty cycle is to assume efficiency, and calculate the duty cycle.
VOUT
VIN
=
§ D ·xK
¨1 - D¸
©
¹
(68)
VOUT
·
§
D=¨
¸
©(VIN x K) +VOUT¹
(69)
Table 7. Efficiencies for Typical SEPIC Applications
VIN
2.7V
VIN
3.3V
VIN
5V
VOUT
3.1V
VOUT
3.1V
VOUT
3.1V
IIN
770mA
IIN
600mA
IIN
375mA
ILED
500mA
ILED
500mA
ILED
500mA
η
75%
η
80%
η
83%
SEPIC Converter PCB Layout
The layout guidelines described for the LM3410 Boost-Converter are applicable to the SEPIC OLED Converter.
Figure 28 is a proper PCB layout for a SEPIC Converter.
LED1
VO
PGND
C2
R1
L2
D1
FB
DIM
4
3
AGND
5
2
6
1
VIN
C1
C3
PGND
SW
L1
VIN
Figure 28. HB/OLED SEPIC PCB Layout
26
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410X SOT-23 Design Example 1: 5 x 1206 Series LED String Application
D1
L1
LEDs
VIN
LM3410
DIMM
C1
4
3
2
R2
5
C2
1
R1
Figure 29. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
TI
LM3410XMF
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
27
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
LM3410Y SOT-23 Design Example 2: 5 x 1206 Series LED String Application
D1
L1
LEDs
VIN
LM3410
DIMM
C1
4
3
2
R2
5
C2
1
R1
Figure 30. LM3410Y (525kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
28
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
TI
LM3410YMF
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
15µH 1.2A
Coilcraft
DO1608C-153
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410X WSON Design Example 3: 7 LEDs x 5 LED String Backlighting Application
L1
L EDs
D1
VIN
LM3410
C1
R2
1
6
2
5
3
4
I LED
DIMM
C2
I SET
R1
Figure 31. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 7 x 5 x 3.3V LEDs, (VOUT ≊ 16.7V), ILED ≊ 25mA
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
TI
LM3410XSD
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
4.7µF, 25V, X5R
TDK
C2012X5R1E475M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
8.2µH, 2A
Coilcraft
MSS6132-822ML
R1
1.15Ω, 1%
Vishay
CRCW08051R15F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
29
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
LM3410X WSON Design Example 4: 3 x HB LED String Application
L1
D1
VIN
LM3410
C1
R2
DIMM
1
6
2
5
3
4
HB - LEDs
C2
R3
R1
Figure 32. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 3 x 3.4V LEDs, (VOUT ≊ 11V) ILED ≊ 340mA
30
Part ID
Part Value
Manufacturer
U1
2.8A ISW LED Driver
TI
LM3410XSD
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
1.00Ω, 1%
Vishay
CRCW08051R00F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
1.50Ω, 1%
Vishay
CRCW08051R50F
HB - LED's
340mA, Vf ≊ 3 .6V
CREE
XREWHT-L1-0000-0901
Submit Documentation Feedback
Part Number
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410Y SOT-23 Design Example 5: 5 x 1206 Series LED String Application with OVP
L1
L EDs
D1
VIN
DIMM
LM3410
C1
OVP
4
R2
3
C2
2
5
D2
1
R3
R1
Figure 33. LM3410Y (525kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
Part ID
Part Value
Manufacturer
U1
2.8A ISW LED Driver
TI
Part Number
LM3410YMF
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA,
Diodes Inc
MBR0530
D2
18V Zener diode
Diodes Inc
1N4746A
L1
15µH, 0.70A
TDK
VLS4012T-150MR65
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
100Ω, 1%
Vishay
CRCW06031000F
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
31
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
LM3410X SEPIC WSON Design Example 6: HB/OLED Illumination Application
VIN
L1
VO
D1
C3
LM3410
C1
1
6
2
5
3
4
C2
L2
HB/OLED
R2
R1
Figure 34. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 3.8V) ILED ≊ 300mA
32
Part ID
Part Value
Manufacturer
U1
2.8A ISW LED Driver
TI
Part Number
LM3410XSD
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106K
C2 Output Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106K
C2012X5R1E225M
C3 Cap
2.2µF, 25V, X5R
TDK
D1, Catch Diode
0.4Vf, Schottky 1A, 20VR
Diodes Inc
DFLS120L
L1 and L2
4.7µH 3A
Coilcraft
MSS6132-472
R1
665 mΩ, 1%
Vishay
CRCW0805R665F
R2
100kΩ, 1%
Vishay
CRCW08051003F
HB - LED’s
350mA, Vf ≊ 3 .6V
CREE
XREWHT-L1-0000-0901
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410X WSON Design Example 7: Boost Flash Application
VIN
L1
D1
VO
LM3410
C1
1
6
2
5
3
4
C2
LEDs
FLASH CTRL
R1
Figure 35. LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 8V) ILED ≊ 1.0A Pulsed
Part ID
Part Value
Manufacturer
U1
2.8A ISW LED Driver
TI
Part Number
LM3410XSD
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2012X5R1A106M
C2 Output Cap
10µF,16V, X5R
TDK
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
4.7µH, 3A
Coilcraft
MSS6132-472
R1
200mΩ, 1%
Vishay
CRCW0805R200F
LED’s
500mA, Vf ≊ 3 .6V, IPULSE = 1.0A
CREE
XREWHT-L1-0000-0901
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
33
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
LM3410X SOT-23 Design Example 8: 5 x 1206 Series LED String Application with VIN > 5.5V
D1
L1
LEDs
VPWR
DIMM
C1
R3
LM3410
4
2
R2
5
D2
3
C2
1
C3
R1
Figure 36. LM3410X (1.6MHz): VPWR = 9V to 14V, (VOUT ≊ 16.5V) ILED ≊ 50mA
34
Part ID
Part Value
Mfg
U1
2.8A ISW LED Driver
TI
Part Number
LM3410XMF
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
C1005X5R1C104K
C2 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
D1, Catch Diode
0.43Vf, Schotky, 0.5A, 30VR
Diodes Inc
MBR0530
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
576Ω, 1%
Vishay
CRCW08055760F
D2
3.3V Zener, SOT-23
Diodes Inc
BZX84C3V3
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410X WSON Design Example 9: Camera Flash or Strobe Circuit Application
VIN
L1
C1
C3
VO
D1
LM3410
1
6
2
5
3
4
L2
LED(s)
R2
C2
Q2
R3
R1
R4
Q1
FLASH CTRL
Figure 37. LM3410X (1.6MHz): VIN = 2.7V to 5.5, (VOUT ≊ 7.5V), ILED ≊ 1.5A Flash
Part ID
Part Value
Mfg
U1
2.8A ISW LED Driver
TI
Part Number
LM3410XSD
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C1608X5R0J106K
C2 Output Cap
220µF, 10V, Tanatalum
KEMET
T491V2271010A2
C3 Cap
10µF, 16V, X5R
TDK
C3216X5R0J106K
D1, Catch Diode
0.43Vf, Schotky, 1.0A, 20VR
Diodes Inc
DFLS120L
L1
3.3µH 2.7A
Coilcraft
MOS6020-332
R1
1.0kΩ, 1%
Vishay
CRCW08051001F
R2
37.4kΩ, 1%
Vishay
CRCW08053742F
R3
100kΩ, 1%
Vishay
CRCW08051003F
R4
0.15Ω, 1%
Vishay
CRCW0805R150F
Q1, Q2
30V, ID = 3.9A
ZETEX
ZXMN3A14F
LED’s
500mA, Vf ≊ 3 .6V, IPULSE = 1.5A
CREE
XREWHT-L1-0000-00901
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
35
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
LM3410X SOT-23 Design Example 10: 5 x 1206 Series LED String Application with VIN and VPWR
Rail > 5.5V
L1
D1
LEDs
VPWR
LM3410
DIMM
C1
4
2
R2
VIN
3
5
C2
1
C3
R1
Figure 38. LM3410X (1.6MHz): VPWR = 9V to 14V, VIN = 2.7V to 5.5V, (VOUT ≊ 16.5V) ILED ≊ 50mA
36
Part ID
Part Value
Mfg
Part Number
U1
2.8A ISW LED Driver
TI
LM3410XMF
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 VOUT Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
C3 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
C1005X5R1C104K
D1, Catch Diode
0.43Vf, Schotky, 0.5A, 30VR
Diodes Inc
MBR0530
L1
10µH 1.5A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
LM3410, LM3410Q
www.ti.com
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
LM3410X WSON Design Example 11: Boot-Strap Circuit to Extend Battery Life
VIN
L1
VO
D1
C4
D2
C1
LM3410
C3
1
6
2
5
3
4
L2
C2
R3
D3
R1
Figure 39. LM3410X (1.6MHz): VIN = 1.9V to 5.5V, VIN > 2.3V (TYP) for Startup, ILED ≊ 300mA
Part ID
Part Value
Mfg
Part Number
U1
2.8A ISW LED Driver
TI
LM3410XSD
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C1608X5R0J106K
C2 VOUT Cap
10µF, 6.3V, X5R
TDK
C1608X5R0J106K
C3 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
C1005X5R1C104K
D1, Catch Diode
0.43Vf, Schotky, 1.0A, 20VR
Diodes Inc
DFLS120L
D2, D3
Dual Small Signal Schotky
Diodes Inc
BAT54CT
L1, L2
3.3µH 3A
Coilcraft
MOS6020-332
R1
665 mΩ, 1%
Vishay
CRCW0805R665F
R3
100kΩ, 1%
Vishay
CRCW08051003F
HB/OLED
3.4Vf, 350mA
TT Electronics/Optek
OVSPWBCR44
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
37
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
REVISION HISTORY
Changes from Revision F (May 2013) to Revision G
•
38
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 37
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q
PACKAGE OPTION ADDENDUM
www.ti.com
2-May-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM3410XMF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSVB
LM3410XMFE/NOPB
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSVB
LM3410XMFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSVB
LM3410XMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSXB
LM3410XMYE/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSXB
LM3410XMYX/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSXB
LM3410XQMF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXUB
LM3410XQMFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXUB
LM3410XSD/NOPB
ACTIVE
WSON
NGG
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410X
LM3410XSDE/NOPB
ACTIVE
WSON
NGG
6
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410X
LM3410XSDX/NOPB
ACTIVE
WSON
NGG
6
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410X
LM3410YMF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSZB
LM3410YMFE/NOPB
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSZB
LM3410YMFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SSZB
LM3410YMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
STAB
LM3410YMYE/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
STAB
LM3410YMYX/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
STAB
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
2-May-2013
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM3410YQMF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXXB
LM3410YQMFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
SXXB
LM3410YSD/NOPB
ACTIVE
WSON
NGG
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410Y
LM3410YSDE/NOPB
ACTIVE
WSON
NGG
6
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410Y
LM3410YSDX/NOPB
ACTIVE
WSON
NGG
6
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
3410Y
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
2-May-2013
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM3410, LM3410-Q1 :
• Catalog: LM3410
• Automotive: LM3410-Q1
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
LM3410XMF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
LM3410XMFE/NOPB
SOT-23
DBV
5
250
178.0
LM3410XMFX/NOPB
SOT-23
DBV
5
3000
178.0
LM3410XMY/NOPB
MSOPPower
PAD
DGN
8
1000
LM3410XMYE/NOPB
MSOPPower
PAD
DGN
8
LM3410XMYX/NOPB
MSOPPower
PAD
DGN
W
Pin1
(mm) Quadrant
3.2
3.2
1.4
4.0
8.0
Q3
8.4
3.2
3.2
1.4
4.0
8.0
Q3
8.4
3.2
3.2
1.4
4.0
8.0
Q3
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM3410XQMF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410XQMFX/NOPB
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410XSD/NOPB
WSON
NGG
6
1000
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM3410XSDE/NOPB
WSON
NGG
6
250
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM3410XSDX/NOPB
WSON
NGG
6
4500
330.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM3410YMF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410YMFE/NOPB
SOT-23
DBV
5
250
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410YMFX/NOPB
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM3410YMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM3410YMYE/NOPB
MSOPPower
PAD
DGN
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM3410YMYX/NOPB
MSOPPower
PAD
DGN
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM3410YQMF/NOPB
SOT-23
DBV
5
1000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410YQMFX/NOPB
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
LM3410YSD/NOPB
WSON
NGG
6
1000
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM3410YSDE/NOPB
WSON
NGG
6
250
178.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
LM3410YSDX/NOPB
WSON
NGG
6
4500
330.0
12.4
3.3
3.3
1.0
8.0
12.0
Q1
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM3410XMF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LM3410XMFE/NOPB
SOT-23
DBV
5
250
210.0
185.0
35.0
LM3410XMFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LM3410XMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM3410XMYE/NOPB
MSOP-PowerPAD
DGN
8
250
210.0
185.0
35.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM3410XMYX/NOPB
MSOP-PowerPAD
DGN
8
3500
367.0
367.0
35.0
LM3410XQMF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LM3410XQMFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LM3410XSD/NOPB
WSON
NGG
6
1000
210.0
185.0
35.0
LM3410XSDE/NOPB
WSON
NGG
6
250
210.0
185.0
35.0
LM3410XSDX/NOPB
WSON
NGG
6
4500
367.0
367.0
35.0
LM3410YMF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LM3410YMFE/NOPB
SOT-23
DBV
5
250
210.0
185.0
35.0
LM3410YMFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LM3410YMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM3410YMYE/NOPB
MSOP-PowerPAD
DGN
8
250
210.0
185.0
35.0
LM3410YMYX/NOPB
MSOP-PowerPAD
DGN
8
3500
367.0
367.0
35.0
LM3410YQMF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LM3410YQMFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LM3410YSD/NOPB
WSON
NGG
6
1000
210.0
185.0
35.0
LM3410YSDE/NOPB
WSON
NGG
6
250
210.0
185.0
35.0
LM3410YSDX/NOPB
WSON
NGG
6
4500
367.0
367.0
35.0
Pack Materials-Page 3
MECHANICAL DATA
DGN0008A
MUY08A (Rev A)
BOTTOM VIEW
www.ti.com
MECHANICAL DATA
NGG0006A
SDE06A (Rev A)
www.ti.com
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated