Taychipst HFM108 Surface mount glass passivated high efficiency silicon rectifier Datasheet

HFM101 THRU HFM108
50V-1000V
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
1.0A
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.0 57 gram
Mechanical Data
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
MAXIMUM RATINGS (At TA = 25 C unless otherwise noted)
RATINGS
SYMBOL
HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Volts
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current
at TA = 50oC
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Amps
Typical Junction Capacitance (Note 2)
CJ
Pulse energy, non repetitive(inductive load switch off )
100
200
300
400
600
800
35
70
140
210
280
420
50
100
200
300
400
600
15
Volts
560
700
Volts
800
1000
Volts
12
20
ER
pF
mJ
-65 to + 150
TJ, TSTG
Operating and Storage Temperature Range
1000
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage at 1.0A DC
VF
HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108
1.0
1.3
o
Maximum Full Load Reverse Current, Full cycle Average TA = 55 C
Maximum DC Reverse Current at
@TA = 25oC
o
Rated DC Blocking Voltage
@TA = 125 C
IR
Maximum Reverse Recovery Time (Note 1)
trr
50
1.7
UNITS
Volts
50
uAmps
5.0
100
uAmps
uAmps
75
nSec
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
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1 of 2
Web Site: www.taychipst.com
HFM101 THRU HFM108
50V-1000V
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
HFM101 THRU HFM108
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
+0.5A
(-)
0
-0.25A
(NOTE 2)
(+)
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
TJ = 100
1.0
TJ = 25
.1
.01
8
10
03
M1
1.0
HF
01~
10
5
10
.1
TJ = 25
.01
Pulse Width = 300uS
1% Duty Cycle
.001
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
M1
TJ = 150
10
0 25 50 75 100 125 150175
AMBIENT TEMPERATURE ( )
HF
100
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
0
FM
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
FM
NOTES:1 Rise Time = 7ns max. Input Impedance =
1.0
~H
OSCILLOSCOPE
(NOTE 1)
~H
1
NONINDUCTIVE
06
GENERATOR
04
25 Vdc
(approx)
(-)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
M1
PULSE
2.0
HF
D.U.T
(+)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
M1
10
NONINDUCTIVE
HF
50
NONINDUCTIVE
AVERAGE FORWARD CURENT, (A)
RATINGS AND CHARACTERISTIC CURVES
1.0A
0
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
60
JUNCTION CAPACITANCE, (pF)
70
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
200
100
60
40
HFM
101
20
10
TJ = 25
6
4
~HF
HF
M10
M1
06~
5
HF
M1
08
2
1
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
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100
.1
2 of 2
.2
.4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
Web Site: www.taychipst.com
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