CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE130N20F3 BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 139 mΩ(typ) Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol Outline TO-263 MTE130N20F3 G D S G：Gate D：Drain S：Source Ordering Information Device MTE130N20F3-0-T7-X Package Shipping TO-263 800 pcs / Tape & Reel (Pb-free lead plating and RoHS compliant package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE130N20F3 CYStek Product Specification Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current@ L=0.1mH (Note 3) Single Pulse Avalanche Energy @ L=1mH, ID=8 Amps, VDD=50V (Note 4) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 200 ±20 18* 12.7* 3.1 2.5 36* 8 EAS 32 mJ 71 35.5 2 1.3 W ID IDSM PD PDSM TL 300 TPKG 260 Tj, Tstg -55~+175 Unit V A °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.1 62.5 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4.100% tested by conditions of L=0.1mH, VGS=10V, IAS=2A, VDD=50V MTE130N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 3/ 9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 200 2.0 - 0.2 10.5 139 4.0 ±100 1 10 180 V V/°C V S nA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=9A VGS=±20V VDS =180V, VGS =0V VDS =180V, VGS =0V, Tj=125°C VGS =10V, ID=9A 17.9 4.4 7.2 13.4 25.2 25.8 35.8 676 42 19 4.4 - nC VDS=160V, ID=11A, VGS=10V ns VDS=100V, ID=11A, VGS=10V, RG=2.5Ω pF VGS=0V, VDS=100V, f=1MHz Ω VDS=0V, f=1MHz 0.87 75 226 18 36 1.5 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns nC IS=18A, VGS=0V VGS=0V, IF=11A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE130N20F3 CYStek Product Specification Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 35 ID, Drain Current (A) 30 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V 25 20 6V 15 5.5V 10 5 VGS=4V 5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 3 6 9 12 VDS, Drain-Source Voltage(V) -75 -50 -25 15 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=6V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.8 ID=9A R DS(on), Normalized Static DrainSource On-State Resistance 900 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 800 700 600 500 400 300 200 100 2.4 VGS=10V, ID=9A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 139mΩtyp. 0.4 0 0 0 MTE130N20F3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 100 C oss Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 20 40 60 80 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=100V VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=15V 0.1 Ta=25°C Pulsed 0.01 0.001 8 VDS=40V 6 VDS=160V 4 2 ID=11A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 10μs RDSON Limited 10 100μs 1ms 10ms 1 100ms DC TC=25°C, Tj=175°C VGS=10V, RθJC=2.1°C/W Single Pulse 0.1 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 20 15 10 5 VGS=10V, RθJC=2.1°C/W 0 0.01 0.1 MTE130N20F3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 35 TJ(MAX) =175°C TC=25°C RθJC=2.1°C/W 1600 1400 25 Power (W) ID, Drain Current(A) 1800 VDS=10V 30 20 15 1200 1000 800 600 10 400 5 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=2.1°C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTE130N20F3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTE130N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE130N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 9/ 9 TO-263 Dimension Marking : Device Name E130 N20 Date Code □□□□ Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Date Code : (From left to right) First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc. Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M Third and fourth codes : production serial number, 01~99 A A1 A2 b b1 b2 b3 c c1 c2 D Millimeters Min. Max. 4.40 4.70 0.00 0.25 2.59 2.79 0.77 0.90 0.76 0.86 1.23 1.36 1.22 1.32 0.34 0.47 0.33 0.43 1.22 1.32 9.05 9.25 Inches Min. Max. 0.173 0.185 0.000 0.010 0.102 0.110 0.030 0.035 0.030 0.034 0.048 0.054 0.048 0.052 0.013 0.019 0.013 0.017 0.048 0.052 0.356 0.364 D1 6.60 0.260 DIM - - DIM E E1 e H L L1 L2 L3 L4 θ Θ1 Millimeters Min. Max. 10.06 10.26 7.80 8.20 2.54 BSC 14.70 15.50 2.00 2.60 1.17 1.40 1.75 0.25 BSC 2.00 REF 0° 8° 5° 9° Θ2 1° Inches Min. Max. 0.396 0.404 0.307 0.323 0.100 BSC 0.579 0.610 0.079 0.102 0.046 0.055 0.069 0.010 BSC 0.079 BSC 0° 8° 5° 9° 5° 1° 5° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE130N20F3 CYStek Product Specification