ON NCV8405STT1G Self-protected low side driver with temperature and current limit Datasheet

NCV8405, NCV8405A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
Features
•
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
(Clamped)
RDS(ON) TYP
ID MAX
42 V
90 mW @ 10 V
6.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Source
MARKING
DIAGRAM
4
1
2
3
SOT−223
CASE 318E
STYLE 3
4
1 2
DRAIN
4
3
DPAK
CASE 369C
AYW
xxxxx G
G
1
2
3
SOURCE
GATE
DRAIN
YWW
xxxxxG
A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = V8405 or 8405A
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 3
1
Publication Order Number:
NCV8405/D
NCV8405, NCV8405A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDSS
42
V
VDGR
42
V
Gate−to−Source Voltage
VGS
"14
V
Continuous Drain Current
ID
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
Power Dissipation − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TT = 25°C (Note 1)
Power Dissipation − DPAK Version
PD
1.0
1.7
11.4
W
2.0
2.5
40
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TC = 25°C (Note 1)
Thermal Resistance − SOT−223 Version
Internally Limited
°C/W
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
RqJA
RqJA
RqJT
130
72
11
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Case Steady State (Note 1)
RqJA
RqJA
RqJT
60
50
3.0
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C)
EAS
275
mJ
Load Dump Voltage
VLD
53
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Thermal Resistance − DPAK Version
VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8405, NCV8405A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
V(BR)DSS
42
46
51
V
42
45
51
0.5
2.0
2.0
10
50
100
1.6
2.0
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
VGS = 0 V, VDS = 32 V, TJ = 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
Gate Input Current
VDS = 0 V, VGS = 5.0 V
IGSSF
mA
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS = VDS, ID = 150 mA
Gate Threshold Temperature Coefficient
VGS(th)
1.0
VGS(th)/TJ
VGS = 10 V, ID = 1.4 A, TJ = 25°C
4.0
90
100
VGS = 10 V, ID = 1.4 A, TJ = 150°C
(Note 5)
165
190
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 5.0 V, ID = 1.4 A, TJ = 25°C
105
120
VGS = 5.0 V, ID = 1.4 A, TJ = 150°C
(Note 5)
185
210
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
105
120
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
185
210
Source−Drain Forward On Voltage
VGS = 0 V, IS = 7.0 A
VSD
VGS = 10 V, VDD = 12 V
ID = 2.5 A, RL = 4.7 W
−dVDS/dtON
1.0
dVDS/dtOFF
0.4
V
−mV/°C
mW
1.05
V
tON
20
ms
tOFF
110
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (70% VDS to 50% VDS)
VGS = 10 V, VDD = 12 V,
RL = 4.7 W
Slew−Rate OFF (50% VDS to 70% VDS)
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
6.0
9.0
11
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
3.0
5.0
8.0
VDS = 10 V, VGS = 10 V, TJ = 25°C
7.0
10.5
13
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
4.0
7.5
10
150
180
200
150
165
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
ILIM
VGS = 5.0 V (Note 5)
TLIM(off)
VGS = 5.0 V
DTLIM(on)
VGS = 10 V (Note 5)
TLIM(off)
VGS = 10 V
DTLIM(on)
15
VGS = 5 V ID = 1.0 A
IGON
50
IGCL
0.05
IGTL
0.22
A
°C
15
185
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
400
VGS = 10 V, VDS = 10 V
Thermal Limit Fault Gate Input Current
VGS = 5 V, VDS = 10 V
mA
mA
0.4
VGS = 10 V, VDS = 10 V
mA
1.0
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
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3
ESD
4000
400
V
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
10
1000
TJstart = 25°C
Emax (mJ)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
1
10
TJstart = 150°C
10
10
100
L (mH)
100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
L (mH)
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
1000
100
Emax (mJ)
IL(max) (A)
TJstart = 25°C
10
TJstart = 25°C
100
TJstart = 150°C
TJstart = 150°C
1
1
10
10
TIME IN CLAMP (ms)
1
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
9V
14
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
12
TA = 25°C
8V
VDS = 10 V
25°C
8
10 6 V
100°C
ID (A)
ID (A)
−40°C
10
10 V
12 7 V
10
TIME IN CLAMP (ms)
4V
8
5V
6
3V
6
150°C
4
4
0
2
VGS = 2.5 V
2
0
1
2
3
4
0
5
1
VDS (V)
Figure 6. Output Characteristics
2
3
VGS (V)
4
Figure 7. Transfer Characteristics
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4
5
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
300
210
150°C, ID = 1.4 A
250
190
150°C, VGS = 10 V
200
150
RDS(on) (mW)
RDS(on) (mW)
170
150°C, ID = 0.5 A
100°C, ID = 1.4 A
100°C, ID = 0.5 A
100
50 −40°C, ID = 0.5 A
3
4
5
8
100°C, VGS = 10 V
25°C, VGS = 5 V
9
50
0.5
10
Figure 8. RDS(on) vs. Gate−Source Voltage
RDS(on) (VGS = 5 V, TJ = 25°C)(NORMALIZED)
100°C, VGS = 5 V
110
−40°C, VGS = 5 V
−40°C, VGS = 10 V
70
25°C, ID = 0.5 A
6
7
VGS (V)
130
90
25°C, ID = 1.4 A
−40°C, ID = 1.4 A
150°C, VGS = 10 V
150
1
1.5
2
25°C, VGS = 10 V
2.5
3
ID (A)
3.5
4
4.5
5
Figure 9. RDS(on) vs. Drain Current
15
2.0
VDS = 10 V
ID = 1.4 A
1.75
13
VGS = 5 V
11
ILIM (A)
1.5
1.25
1.0
−40°C
25°C
9
100°C
7
VGS = 10 V
150°C
5
0.75
0.5
−40
−20
0
20
40
60
T (°C)
80
100 120
3
140
5
6
7
8
9
10
VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
VGS = 0 V
14
150°C
1
IDSS (mA)
ILIM (A)
12
VGS = 10 V
10
0.1
8
VGS = 5 V
0.01
100°C
−40°C
25°C
6
VDS = 10 V
4
−40 −20 0
20
40
60
80
0.001
10
100 120 140 160
15
20
25
30
35
TJ (°C)
VDS (V)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
40
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
1.1
ID = 150 mA
VGS = VDS
1.1
1
−40°C
25°C
0.9
1
VSD (V)
NORMALIZED VGS(th) (V)
1.2
0.9
0.8
100°C
0.8
0.7
150°C
0.6
0.7
0.5
0.6
−40
0.4
−20
0
20
40
60
80
100
120
140
VGS = 0 V
1
2
3
4
5
T (°C)
200
TIME (ms)
100
ID = 2.5 A
VDD = 12 V
RG = 0 W
tr
td(off)
50
tf
td(on)
0
3
4
5
6
7
VGS (V)
8
9
10
75
50
td(off), (VGS = 10 V)
tf, (VGS = 5 V)
25 t
d(on), (VGS = 10 V) t , (V
r
GS = 10 V)
0
0
tr, (VGS = 5 V)
tf, (VGS = 10 V)
td(off), (VGS = 5 V)
td(on), (VGS = 5 V)
9
10
ID = 2.5 A
VDD = 12 V
RG = 0 W
1.000
−dVDS/dt(on)
0.500
dVDS/dt(off)
0.000
3
4
5
6
7
VGS (V)
8
9
10
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
100
ID = 2.5 A
VDD = 12 V
8
1.500
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
125
7
Figure 15. Body−Diode Forward
Characteristics
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
Figure 14. Normalized Threshold Voltage vs.
Temperature
150
6
IS (A)
200 400 600 800 1000 1200 1400 1600 1800 2000
RG (W)
1.5
1.3
−dVDS/dt(on), VGS = 10 V
1.1
0.9
0.7
0.5
dVDS/dt(off), VGS = 5 V
0.3
dVDS/dt(off), VGS = 10 V
−dVDS/dt(on), VGS = 5 V
ID = 2.5 A
VDD = 12 V
0.1
−0.1
0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
500
1000
RG (W)
1500
200
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
100
20%
10%
10
5%
2%
1
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance
140
TA 25°C
120
qJA Curve with PCB cu thk 1.0 oz
100
qJA (°C/W)
RqJA 1” SQ 1 Oz COPPER
50% Duty Cycle
80
60
qJA Curve with PCB cu thk 2.0 oz
40
20
0
0
100
200
300
400
500
COPPER HEAT SPREADER AREA
Figure 21. qJA vs. Copper
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7
600
(mm2)
700
100
1000
NCV8405, NCV8405A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
G DUT
−
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
VIN
10%
td(ON)
tr
td(OFF)
tf
90%
10%
IDS
Figure 23. Resistive Load Switching Waveforms
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8
NCV8405, NCV8405A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
RG
+
VDD
G DUT
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5V
VIN
0V
Tav
Tp
V(BR)DSS
Ipk
VDD
VDS
VDS(on)
IDS
0
Figure 25. Inductive Load Switching Waveforms
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9
NCV8405, NCV8405A
ORDERING INFORMATION
Package
Shipping†
NCV8405STT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8405ASTT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8405DTRKG
DPAK
(Pb−Free)
2500 / Tape & Reel
NCV8405STT3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8405ASTT3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8405ADTRKG
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NCV8405, NCV8405A
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
q
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
3
e
A1
C
q
A
L
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
b
e1
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
NCV8405, NCV8405A
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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