BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP740ESD BFP740ESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 1.0, 2010-06-29 BFP740ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 5.1 5.2 5.3 5.4 5.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 4 12 12 12 13 18 21 Revision 1.0, 2010-06-29 BFP740ESD List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP740ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP740ESD: T7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 13 18 18 19 19 20 21 21 22 22 23 23 24 24 25 25 26 26 28 28 28 28 Revision 1.0, 2010-06-29 BFP740ESD List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Data Sheet Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision 1.0, 2010-06-29 Robust High Performance Low Noise RF Bipolar Transistor 1 • • • • • • • • BFP740ESD Features Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology 3 2 kV ESD robustness (HBM) due to integrated protection circuits High maximum RF input power of 21 dBm 4 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA 25.5 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 18.5 dB at 5.5 GHz, 25 mA 24 dBm OIP3 typical at 5.5 GHz, 25 mA Accurate SPICE GP model available to enable effective design in process (see chapter 6) Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads 2 1 Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP740ESD Data Sheet SOT343 Pin Configuration 1=B 2=E 3=C 7 Marking 4=E T7s Revision 1.0, 2010-06-29 BFP740ESD Product Brief 2 Product Brief The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V. Table 1 Quick Reference DC Characteristics at TA = 25°C Parameter Collector emitter breakdown voltage Symbol V(BR)CEO Values Min. Typ. Max. 4.2 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector base leakage current ICBO – – 400 nA VCB = 2 V, IE = 0 Open emitter DC current gain hFE 160 250 400 Collector current IC – – 45 mA Total power dissipation Ptot – – 160 mW Data Sheet 8 VCE = 3 V, IC = 25 mA TS ≤ 98 °C Revision 1.0, 2010-06-29 BFP740ESD Product Brief Table 2 Quick Reference AC Characteristics at TA = 25°C Parameter Transition frequency Symbol fT Values Min. Typ. Max. – 45 – Unit Note / Test Condition GHz VCE = 3 V, IC = 25 mA f = 2 GHz VCE = 3 V, f = 2.4 GHz Maximum power gain dB Low noise operation point Gms – 22 – IC = 6 mA High linearity operation point Gms – 25.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 19.5 – IC = 6 mA High linearity operation point S21 – 22 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.65 – IC = 6 mA Associated gain Gass – 20 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10.5 – IC = 25 mA 3rd order intercept point OIP3 – 25 – IC = 25 mA VCE = 3 V, f = 5.5 GHz Maximum power gain dB Low noise operation point Gms – 19 – IC = 6 mA High linearity operation point Gma – 18.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 13 – IC = 6 mA High linearity operation point S21 – 14.5 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.9 – IC = 6 mA Associated gain Gass – 13.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10 – IC = 25 mA 3rd order intercept point OIP3 – 24 – IC = 25 mA Data Sheet 9 Revision 1.0, 2010-06-29 BFP740ESD Maximum Ratings 3 Maximum Ratings Table 3 Maximum Ratings at TA = 25°C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage Collector emitter voltage1) 2) Collector emitter voltage Base current 3) Collector current RF input power ESD stress pulse 4) Unit Note / Test Condition Max. VCEO Open base – 4.2 V TA = 25°C – 3.7 V TA = -55 °C VCBO Open emitter – 4.9 V TA = 25°C – 4.4 V TA = -55 °C VCES Emitter / base shortened – 4.2 V TA = 25°C – 3.7 V TA = -55 °C IB -10 5 mA – IC – 45 mA – PRFin – 21 dBm – VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 5) Ptot – 160 mW TS ≤ 98 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – Total power dissipation 1) Low VCBO due to integrated protection circuits 2) VCES is identical to VCEO due to integrated protection circuits. 3) Sustainable reverse bias current is high due to integrated protection circuits. 4) ESD robustness is high due to integrated protection circuits. 5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 10 Revision 1.0, 2010-06-29 BFP740ESD Thermal Characteristics 4 Thermal Characteristics Table 4 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 325 – K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077 – 180 160 140 Ptot [mW] 120 100 80 60 40 20 0 Figure 1 Data Sheet 0 25 50 75 TS [°C] 100 125 150 Total Power Dissipation Ptot = f (Ts) 11 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Values Min. Typ. Max. 4.2 4.7 – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base Collector emitter leakage current ICES – – 400 nA VCE = 2 V, VBE = 0 Emitter/base shortened Collector base leakage current ICBO – – 400 nA VCB = 2 V, IE = 0 Open emitter Emitter base leakage current IEBO – – 10 μA VEB = 0.5 V, IC = 0 Open collector DC current gain hFE 160 250 VCE = 3 V, IC = 25 mA 400 Pulse measured 5.2 General AC Characteristics Table 6 General AC Characteristics at TA = 25 °C Parameter Transition frequency Symbol fT Values Min. Typ. Max. – 45 – Unit Note / Test Condition GHz VCE = 3 V, IC = 25 mA f = 2 GHz Collector base capacitance CCB – 0.08 – pF VCB = 3 V, VBE = 0 f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.45 – pF VCE = 3 V, VBE = 0 f = 1 MHz Base grounded Emitter base capacitance CEB – 0.55 – pF VEB = 0.4 V, VCB = 0 f = 1 MHz Collector grounded Data Sheet 12 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 2 BFP740ESD Testing Circuit Table 7 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 34 – IC = 6 mA High linearity operation point Gms – 38.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 25 – IC = 6 mA High linearity operation point S21 – 34 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.55 – IC = 6 mA Associated gain Gass – 30.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 9 – IC = 25 mA 3rd order intercept point OIP3 – 23.5 – IC = 25 mA Data Sheet 13 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics Table 8 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 29 – IC = 6 mA High linearity operation point Gms – 33.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 24.5 – IC = 6 mA High linearity operation point S21 – 32 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.55 – IC = 6 mA Associated gain Gass – 28.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 9.5 – IC = 25 mA 3rd order intercept point OIP3 – 23.5 – IC = 25 mA Table 9 AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 26 – IC = 6 mA High linearity operation point Gms – 30.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 23.5 – IC = 6 mA High linearity operation point S21 – 29 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.55 – IC = 6 mA Associated gain Gass – 25.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 9.5 – IC = 25 mA 3rd order intercept point OIP3 – 24 – IC = 25 mA Data Sheet 14 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics Table 10 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 23.5 – IC = 6 mA High linearity operation point Gms – 28 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 22 – IC = 6 mA High linearity operation point S21 – 25.5 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.6 – IC = 6 mA Associated gain Gass – 23 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10 – IC = 25 mA 3rd order intercept point OIP3 – 24.5 – IC = 25 mA Table 11 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 22.5 – IC = 6 mA High linearity operation point Gms – 26.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 21 – IC = 6 mA High linearity operation point S21 – 24 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.6 – IC = 6 mA Associated gain Gass – 21 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10 – IC = 25 mA 3rd order intercept point OIP3 – 25 – IC = 25 mA Data Sheet 15 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 22 – IC = 6 mA High linearity operation point Gms – 25.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 19.5 – IC = 6 mA High linearity operation point S21 – 22 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.65 – IC = 6 mA Associated gain Gass – 20 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10.5 – IC = 25 mA 3rd order intercept point OIP3 – 25 – IC = 25 mA Table 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 20.5 – IC = 6 mA High linearity operation point Gms – 23 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 17 – IC = 6 mA High linearity operation point S21 – 19 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.7 – IC = 6 mA Associated gain Gass – 16.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10.5 – IC = 25 mA 3rd order intercept point OIP3 – 24.5 – IC = 25 mA Data Sheet 16 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics Table 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 19 – IC = 6 mA High linearity operation point Gma – 18.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 13 – IC = 6 mA High linearity operation point S21 – 14.5 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 0.9 – IC = 6 mA Associated gain Gass – 13.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 10 – IC = 25 mA 3rd order intercept point OIP3 – 24 – IC = 25 mA Table 15 AC Characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Maximum power gain dB Low noise operation point Gms – 14.5 – IC = 6 mA High linearity operation point Gms – 14.5 – IC = 25 mA Transducer gain dB ZS = ZL = 50 Ω Low noise operation point S21 – 5.5 – IC = 6 mA High linearity operation point S21 – 7.5 – IC = 25 mA Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin – 1.8 – IC = 6 mA Associated gain Gass – 8.5 – IC = 6 mA Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB – 7.5 – IC = 25 mA 3rd order intercept point OIP3 – 21 – IC = 25 mA Note: 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 17 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 5.4 Characteristic DC Diagrams 50 IB = 225µA IB = 205µA IB = 185µA IB = 165µA IB = 145µA IB = 125µA IB = 105µA 40 IC [mA] 30 IB = 85µA 20 IB = 65µA IB = 45µA 10 IB = 25µA IB = 5µA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE [V] Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter Figure 3 hFE 1000 100 0.1 1 10 100 IC [mA] Figure 4 Data Sheet DC Current Gain hFE = f (IC), VCE = 3 V 18 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 100 10 IC [mA] 1 0.1 0.01 0.001 0.0001 0.5 0.6 0.7 0.8 0.9 VBE [V] Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V 1 0.1 IB [mA] 0.01 0.001 0.0001 0.00001 0.5 0.6 0.7 0.8 0.9 V BE [V] Figure 6 Data Sheet Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V 19 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 1.E-04 1.E-05 IB [A] 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 0.3 0.4 0.5 0.6 0.7 0.8 VEB [V] Figure 7 Data Sheet Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V 20 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 5.5 Characteristic AC Diagrams 50 3 to 4V 45 2.5V 40 2V 35 fT [GHz] 30 25 20 15 10 1V 5 0 Figure 8 0 5 10 15 20 IC [mA] 25 30 35 40 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter 30 25 OIP3 [dBm] 20 15 10 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz 5 0 −5 Figure 9 Data Sheet 0 5 10 15 20 IC [mA] 25 30 35 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters 21 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 0.2 0.18 0.16 0.12 0.1 C cb [pF] 0.14 0.08 0.06 0.04 0.02 0 Figure 10 0 0.5 1 1.5 2 VCB [V] 2.5 3 3.5 4 Collector Base Capacitance CCB = f (VCB), f = 1 MHz 50 45 40 35 Gms G [dB] 30 25 G G ms ma 20 2 |S21| 15 10 5 0 Figure 11 Data Sheet 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA 22 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 42 0.15GHz 39 36 0.45GHz 33 0.90GHz G [dB] 30 1.50GHz 1.90GHz 2.40GHz 27 24 3.50GHz 21 5.50GHz 18 15 10.00GHz 12 9 Figure 12 0 5 10 15 20 25 IC [mA] 30 35 40 45 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz 42 0.15GHz 39 36 0.45GHz 33 0.90GHz G [dB] 30 1.50GHz 1.90GHz 2.40GHz 3.50GHz 27 24 21 18 5.50GHz 15 10.00GHz 12 9 0 1 2 3 4 5 VCE [V] Figure 13 Data Sheet Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz 23 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 1 1.5 10 0.5 0.4 9 8 8 2 10 9 7 0.3 7 6 0.2 5 3 6 4 5 5 4 0.1 10 0.03 to 10 GHz 0.1 0 3 0.2 40.3 0.4 0.5 1 1.5 2 3 4 5 2 −0.1 −10 3 −0.2 −5 −4 1 −0.3 −3 2 −0.4 1 −0.5 −2 −1.5 25 mA 6 mA −1 Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA 1 1.5 0.5 2 0.4 3 0.3 1.9GHz 2.4GHz 4 0.2 5 0.9GHz 0.45GHz 0.1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 4 5 Ic = 6.0mA 5.5GHz −0.1 3 10 −10 I = 25mA c −0.2 −5 −4 −0.3 −3 −0.4 −0.5 10GHz −2 −1.5 −1 Figure 15 Data Sheet Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA 24 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 1 1.5 0.5 2 0.4 0.3 3 10 10 4 0.2 0.1 5 9 9 8 8 0.1 0 7 0.2 0.3 0.4 0.5 6 1 1.5 2 3 4 5 5 6 −0.1 10 0.03 to 10 GHz 7 4 5 −10 3 2 4 −0.2 −5 −4 1 3 1 −0.3 −3 2 −0.4 −0.5 −2 −1.5 25 mA 6 mA −1 Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA 2 1.8 1.6 NFmin [dB] 1.4 1.2 1 0.8 0.6 0.4 I = 25mA C IC = 6.0mA 0.2 0 0 2 4 6 8 10 f [GHz] Figure 17 Data Sheet Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt 25 Revision 1.0, 2010-06-29 BFP740ESD Electrical Characteristics 3 2.8 2.6 2.4 2.2 NFmin [dB] 2 1.8 1.6 1.4 1.2 1 0.8 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz f = 0.45GHz 0.6 0.4 0.2 0 Figure 18 0 5 10 15 Ic [mA] 20 25 30 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz 5 4.5 f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz f = 0.45GHz 4 NF50 [dB] 3.5 3 2.5 2 1.5 1 0.5 0 Figure 19 0 5 10 15 Ic [mA] 20 25 30 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C Data Sheet 26 Revision 1.0, 2010-06-29 BFP740ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP740ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 27 Revision 1.0, 2010-06-29 BFP740ESD Package Information SOT343 7 Package Information SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 20 Package Outline 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 21 Package Foot Print Manufacturer XYs Marking Pin 1 Figure 22 Marking Example (Marking BFP740ESD: T7s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 23 Data Sheet Tape Dimensions 28 Revision 1.0, 2010-06-29 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG