CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Features • Peak Output Current : IOP = ±2.5A (max) • Threshold Input Current: IFLH = 5 mA (max) • Common mode transient immunity : ±20kV/µs Description The CT3120 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving ） power IGBTs and MOSFETs used in motor control (min • inverter applications. The high operating voltage Under voltage lock out (UVLO) protection with range of the output stage provides the drive hysteresis • voltages required by gate controlled devices. Pb free and RoHS compliant. Applications • Isolated IGBT/Power MOSFET gate drive • Industrial Inverter • AC brushless and DC motor drives • Induction Heating Package Outline Schematic Note: Different lead forming options available. See package dimension. CT Micro Proprietary & Confidential Page 1 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Truth Table Vcc-VEE Vcc-VEE Positive Going Negative Going Off 0 to 30 V 0 to 30V Low On 0 to 11.5V 0 to 10V Low On 11.5 to 13.5V 10 to 12V Transition On 13.5 to 30V 12 to 30V High LED Output Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units Notes 5000 VRMS 1 VISO Isolation voltage TOPR Operating temperature -40 ~ +100 0C TSTG Storage temperature -55 ~ +125 0C TSOL Soldering temperature 260 0C Total Power Dissipation 300 mW Operating Frequency 50 kHz IF Forward current 25 mA IFP Peak forward current (50% duty, 1ms P.W) 1 A VR Reverse voltage 5 V Power dissipation 250 mW Peak Output Voltage 35 V IOPH Output High Peak Current 2.5 A 4 IOPL Output Low Peak Current 2.5 A 4 VCC Supply voltage 0 to 30 V PT fOPR 2 3 Emitter Detector PD VO(PEAK) Notes 1. AC for 1 minute, RH = 40 ~ 60%. 2. For 10 second peak 3. Exponential Waveform, IO(PEAK) ≤ |2.5A|, Pulse Width ≤ 0.3us 4. Pulse Width = 10uS, DC = 1.0% CT Micro Proprietary & Confidential Page 2 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Electrical Characteristics Typical values are measured at Vcc=30V, VEE= Gnd, TA = 250C(unless otherwise stated) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units VF Forward voltage IF = 10mA - 1.45 1.7 V VR Reverse Voltage IR = 10µA 5.0 - - V IF =10mA - -1.8 - mV/°C Test Conditions Min Typ Max Units mA ∆VF/∆TA Notes Temperature coefficient of forward voltage Detector Characteristics Symbol Parameters ICCL Logic Low Supply Current VF = 0 to 0.8V, VO= Open - 1.5 3.7 ICCH Logic High Supply Current IF= 7mA to 10mA, VO= Open - 1.7 3.7 Test Conditions Min Typ Max - - Notes Transfer Characteristics Symbol Parameters Units Notes VCCIF= 10mA, IO= -2.5A 6.25 VOH High Level Output Voltage V VCCIF= 10mA, IO= -100mA - - 0.25 VEE IF= 0mA, IO= 2.5A - +6.25 VOL Low Level Output Voltage V VEE IF= 0mA, IO= 100mA - +0.25 IOPH IOPL VO= VCC-3V -1 - - VO= VCC-6V -2 - - VO= VEE+3V 1 - - VO= VEE+6V 2 - - High Level Output Current A Low Level Output Current A IFHL Input Threshold Current IO= 0mA, VO> 5V - 2.0 5.0 mA VFHL Input Threshold Voltage IO= 0mA, VO< 5V 0.8 - - V VUVLO+ Under Voltage Lockout IO= 10mA, VO> 5V 11 - 13.5 VUVLO- Threshold IO= 10mA, VO< 5V 10 - 12.2 V CT Micro Proprietary & Confidential Page 3 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Electrical Characteristics Typical values are measured at Vcc=30V, VEE= Gnd, TA = 25 0C(unless otherwise stated) Switching Characteristics Symbol Parameters TPHL High to Low Propagation Delay TPLH Low to High Propagation Delay PWD Test Conditions Min Typ Max Units 120 185 300 ns 150 175 300 ns 10 100 ns 40 ns Notes IF= 7 to 16mA, CL= 10nF, Pulse Width Distortion RL= 10Ω, f= 10kHz, Duty = tPSK Propagation Delay Skew 50%, TA= 25 0C tr Rise Time 60 ns tf Fall Time 60 ns tUVLO(ON) UVLO Turn On Delay IF= 10mA, VO> 5V 2.5 µs tUVLO(OFF) UVLO Turn Off Delay IF= 10mA, VO< 5V 0.4 µs VCC= 30V, |CMH| Common Mode Transient High |CML| Common Mode Transient Low RL= 350Ω, IF= 7 to 16mA, -20 kV/µs IF= 0mA 20 kV/µs TA= 25 0C, CT Micro Proprietary & Confidential VCM= 2kV Page 4 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Typical Characteristic Curves CT Micro Proprietary & Confidential Page 5 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler CT Micro Proprietary & Confidential Page 6 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler CT Micro Proprietary & Confidential Page 7 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler CT Micro Proprietary & Confidential Page 8 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Package Dimension Dimensions in mm unless otherwise stated Standard DIP – Through Hole Gullwing (400mil) Lead Forming – Through Hole CT Micro Proprietary & Confidential Page 9 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Surface Mount Lead Forming Surface Mount (Low Profile) Lead Forming CT Micro Proprietary & Confidential Page 10 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Recommended Solder Mask Dimensions in mm unless otherwise stated Device Marking CT 3120 YWWD Note: CT 3120 Y : Denotes “CT Micro” : Product Number : Fiscal Year WW D : Work Week : Production Code CT Micro Proprietary & Confidential Page 11 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Ordering Information CT3120(Y)(Z) Y = Lead form option (S, SL, M or none) Z = Tape and reel option (T1, T2 or none) Option Description Quantity None Standard 8 Pin Dip 45 Units/Tube M Gullwing (400mil) Lead Forming 45 Units/Tube S(T1) Surface Mount Lead Forming – With Option 1 Taping 1000 Units/Reel S(T2) Surface Mount Lead Forming – With Option 2 Taping 1000 Units/Reel SL(T1) Surface Mount (Low Profile) Lead Forming– With Option 1 Taping 1000 Units/Reel SL(T2) Surface Mount (Low Profile) Lead Forming – With Option 2 Taping 1000 Units/Reel CT Micro Proprietary & Confidential Page 12 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) & SL(T1) Option S(T2) & SL(T2) CT Micro Proprietary & Confidential Page 13 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Micro Proprietary & Confidential Page 14 Rev 1 Aug, 2013 CT3120 2.5A MOSFET/IGBT Gate Driver Optocoupler DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform into the body, or (b) support or sustain life, or (c) can be reasonably expected to cause the failure of whose failure to perform when properly used in the life support device or system, or to affect its accordance with instruction for use provided in the safety or effectiveness. labelling, can be reasonably expected to result in significant injury to the user. CT Micro Proprietary & Confidential Page 15 Rev 1 Aug, 2013