Infineon AUIRFR6215TRL Automotive grade Datasheet

AUTOMOTIVE GRADE
AUIRFR6215
Features
 Advanced Planar Technology
 Low On-Resistance
 P-Channel
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on)
D-Pak
0.295
-13A
D
G
S
D-Pak
AUIRFR6215
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Package Type
AUIRFR6215
max.
ID
Description
Specifically designed for Automotive applications of HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Base part number
-150V
S
Source
Orderable Part Number
AUIRFR6215
AUIRFR6215TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-13
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation
-9.0
-44
110
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
Units
A
W
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
–––
1.4
50
110
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFR6215
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
-150 ––– –––
V VGS = 0V, ID = -250µA
––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA 
––– ––– 0.295
VGS = -10V, ID = -6.6A 

––– ––– 0.58
VGS = -10V, ID = -6.6A TJ =150°C
-2.0
––– -4.0
V VDS = VGS, ID = -250µA
3.6
––– –––
S VDS = -50V, ID = -6.6A 
––– ––– -25
VDS = -150 V, VGS = 0V
µA
––– ––– -250
VDS = -120V,VGS = 0V,TJ =150°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
36
53
37
66
8.1
35
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
860
220
130
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
-13
–––
–––
-44
–––
–––
–––
–––
160
1.2
-1.6
240
1.7
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
ID = -6.6A
nC VDS = -120V
VGS = -10V, See Fig 6 and 13 
VDD = -75V
ID = -6.6A
ns
RG = 6.8
RD = 12See Fig 10 
Between lead,
6mm (0.25in.)
nH
from package

and center of die contact
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -6.6A,VGS = 0V 
ns TJ = 25°C ,IF = -6.6A
µC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 VDD = -25V, starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A. (See Fig.12)
 ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 300µs; duty cycle  2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .
Uses IRF6215 data and test conditions.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 Ris measured at TJ approximately 90°C.
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AUIRFR6215
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
20µs PULSE WIDTH
Tc = 25°C
A
-4.5V
1
1
10
10
-4.5V
1
1
100
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 175°C
10
VDS = -50V
20µs PULSE WIDTH
5
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
A
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
4
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TC = 175°C
10
I D = -11A
2.0
1.5
1.0
0.5
VGS = -10V
0.0
A
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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AUIRFR6215
20
2000
C, Capacitance (pF)
1600
-V GS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
Ciss
1200
Coss
800
Crss
400
0
1
10
100
I D = -6.6A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
A
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS = -120V
VDS = -75V
VDS = -30V
TJ = 175°C
10
TJ = 25°C
1
100µs
10
1ms
VGS = 0V
0.1
0.2
0.6
1.0
1.4
-VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
A
1.8
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
100
A
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRFR6215
14
-ID , Drain Current (A)
12
10
8
6
4
Fig 10a. Switching Time Test Circuit
2
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
800
TOP
BOTTOM
ID
-2.7A
-4.7A
-6.6A
600
400
200
0
25
50
75
100
125
150
A
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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AUIRFR6215
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRFR6215
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR6215
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR6215
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR6215
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D-Pak
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
MSL1
Class M4 †
AEC-Q101-002
Class H3A †
AEC-Q101-001
Class C5 †
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/12/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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