JMNIC BFG94 Npn 6 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG94
NPN 6 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES
BFG94
PINNING
• High power gain
PIN
• Low noise figure
1
emitter
• Low intermodulation distortion
2
base
• Gold metallization ensures
excellent reliability.
3
emitter
4
collector
DESCRIPTION
4
page
DESCRIPTION
1
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
−
15
V
VCEO
collector-emitter voltage
open base
−
−
12
V
IC
DC collector current
−
−
60
mA
Ptot
total power dissipation
up to Ts = 140 °C (note 1)
−
−
700
mW
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
−
0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
4
6
−
GHz
GUM
maximum unilateral power gain
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
11.5
13.5
−
dB
VO
output voltage
IC = 45 mA; VCE = 10 V;
dim = −60 dB; RL = 75 Ω;
f = 800 MHz; Tamb = 25 °C
−
500
−
mV
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
21.5
−
dBm
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
60
mA
Ptot
total power dissipation
up to Ts = 140 °C (note 1)
−
700
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 140 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
50 K/W
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
CONDITIONS
MIN. TYP. MAX.
IE = 0; VCB = 10 V
−
−
100
IC = 30 mA; VCE = 5 V
45
90
−
IC = 45 mA; VCE = 10 V
−
100
−
UNIT
nA
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.9
2
pF
Ce
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz
−
2.9
4.5
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
−
0.5
0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
4
−
−
GHz
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 °C
4
6
−
GHz
GUM
maximum unilateral power gain
(note1)
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
11.5
13.5
−
dB
F
minimum noise figure
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 500 MHz
−
2.7
−
dB
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 1 GHz
−
3
−
dB
VO
output voltage
note 2
−
500
−
mV
d2
second order intermodulation
distortion
note 3
−
−51
−
dB
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; RL = 50 Ω; −
Tamb = 25 °C; measured at f = 1 GHz
21.5
−
dBm
ITO
third order intercept point
note 4
34
−
dBm
−
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log ------------------------------------------------------------2 
2
1
S
1
–
S
–

11  
22 
2. dim = −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; Vr = VO −6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 Ω; Tamb = 25 °C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2p−q) and f(2q−p).
September 1995
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
+VCC
+VBB
L3
10 kΩ
L2
1 nF
1 nF
L1
247 Ω
1 nF
input
75 Ω
output
75 Ω
INPUT SLUG TUNER
BIAS
TEE
input
OUTPUT SLUG TUNER
BIAS
TEE
output
DUT
TEST
FIXTURE
DUT
2 pF
33 Ω
33 Ω
MBB780
MBB789
L1 = L3 = 5 µH micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2
Test circuit for second and third order
intermodulation distortion.
Fig.3
Measurement set-up for third order
intercept point and 1 dB gain compression.
MBB790
800
MCD087
120
handbook, halfpage
handbook, halfpage
P tot
(mW)
h FE
600
80
400
40
200
0
0
50
100
150
0
200
0
Ts (°C)
10
20
IC (mA)
30
VCE = 10 V; Tj = 25 °C
Fig.4 Power derating curve.
September 1995
Fig.5
5
DC current gain as a function of collector
current.
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MBB791
1
MCD089
8
handbook, halfpage
handbook, halfpage
C re
(pF)
fT
(GHz)
0.8
6
0.6
4
0.4
2
0.2
0
0
0
4
8
12
16
V CE (V)
0
10
20
30
40
I C (mA)
IC = ic = 0; f = 1 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6
Fig.7
Feedback capacitance as a function of
collector-emitter voltage.
Transition frequency as a function of
collector current.
MBB792
MBB793
60
40
handbook, halfpage
handbook, halfpage
G UM
G UM
(dB)
(dB)
30
40
20
20
10
0
40
0
400
f (MHz)
4000
10
Ic = 45 mA; VCE = 10 V.
Ic = 20 mA; VCE = 8 V.
Fig.8
Fig.9
Maximum unilateral power gain as a
function of frequency.
September 1995
6
102
103
f (MHz)
104
Maximum unilateral power gain as a
function of frequency.
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MBB794
MBB795
30
20
handbook, halfpage
handbook, halfpage
G max
gain
(dB)
(dB)
15
20
G max
10
G UM
10
5
0
10
102
103
f (MHz)
0
104
0
20
50
40
I C (mA)
30
VCE = 8 V; f = 1 GHz.
Gmax = maximum available stable gain.
GUM = maximum unilateral power gain.
Ic = 20 mA; VCE = 8 V.
Fig.10 Maximum available stable gain as a
function of frequency.
Fig.11 Gain as a function of collector current.
MBB782
20
MBB781
20
handbook, halfpage
handbook, halfpage
d2
(dB)
d3
(dB)
40
40
60
60
80
10
10
30
50
I C (mA)
80
70
10
30
50
I C (mA)
70
Ic = 45 mA; VCE = 10 V; f(p+q) = 810 MHz.
See test circuit, Fig.2
Ic = 45 mA; VCE = 10 V; f(p+q−r) = 793.25 MHz.
See test circuit, Fig.2
Fig.12 Second order intermodulation distortion as
a function of collector current.
Fig.13 Third order intermodulation distortion as a
function of collector current.
September 1995
7
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
MCD094
4
handbook, halfpage
F
(dB)
f = 2 GHz
3
1 GHz
500 MHz
2
1
0
1
10
I C (mA)
10 2
VCE = 8 V.
Fig.14 Minimum noise figure as a function of
collector current.
September 1995
8
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
handbook, full pagewidth
BFG94
stability
circle
1
0.5
uns
ta b
le r
e g io
n
2
0.2
5
+j
0
0.2
0.5
F min
B
80 d
T
OP
10
= 1.
2
5
10
∞
1
−j
B
2d
10
dB
2.5
B
3d
0.2
5
B
4d
B
5d
2
0.5
MBB788
1
Ic = 15 mA; VCE = 10 V; f = 500 MHz.
Fig.15 Noise circle.
1
handbook, full pagewidth
0.5
2
0.2
5
dB
25
0
0.2
10
T 1
2
OP
5
10
∞
5
d
dB B
10
3.
3
dB
2.
5
−j
in
Fm
0.5
=
2.
dB
+j
dB
5
5
4
0.2
2
0.5
1
Ic = 15 mA; VCE = 10 V; f =1 GHz.
Fig.16 Noise circle.
September 1995
9
MBB787
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
50
handbook, full pagewidth
25
100
3 GHz
10
250
+j
10
0
25
50
100
250
∞
–j
40 MHz
10
250
100
25
MBB784
50
IC = 45 mA; VCE = 10 V.
ZO = 50 Ω.
Fig.17 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
150°
30°
3 GHz
+ϕ
180°
0.5
0.4
0.3
0.2
0.1
0°
40 MHz
−ϕ
30°
150°
60°
120°
90°
MBB786
IC = 45 mA; VCE = 10 V.
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
10
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
90°
handbook, full pagewidth
120°
60°
150°
30°
40 MHz
+ϕ
50
180°
40
30
20
10
0°
3 GHz
−ϕ
30°
150°
60°
120°
MBB785
90°
IC = 45 mA; VCE = 10 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
+j
0
10
25
3 GHz
50
100
250
∞
–j
40 MHz
250
10
100
25
50
MBB783
IC = 45 mA; VCE = 10 V.
ZO = 50 Ω.
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
11
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
September 1995
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFG94
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
13
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