DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN • Low noise figure 1 emitter • Low intermodulation distortion 2 base • Gold metallization ensures excellent reliability. 3 emitter 4 collector DESCRIPTION 4 page DESCRIPTION 1 NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems. 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 15 V VCEO collector-emitter voltage open base − − 12 V IC DC collector current − − 60 mA Ptot total power dissipation up to Ts = 140 °C (note 1) − − 700 mW Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − − 0.8 pF fT transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 4 6 − GHz GUM maximum unilateral power gain IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 11.5 13.5 − dB VO output voltage IC = 45 mA; VCE = 10 V; dim = −60 dB; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C − 500 − mV PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 21.5 − dBm Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 60 mA Ptot total power dissipation up to Ts = 140 °C (note 1) − 700 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 140 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 3 THERMAL RESISTANCE 50 K/W Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain CONDITIONS MIN. TYP. MAX. IE = 0; VCB = 10 V − − 100 IC = 30 mA; VCE = 5 V 45 90 − IC = 45 mA; VCE = 10 V − 100 − UNIT nA Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.9 2 pF Ce emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz − 2.9 4.5 pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.5 0.8 pF fT transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 4 − − GHz IC = 30 mA; VCE = 5 V; f = 1 GHz; Tamb = 25 °C 4 6 − GHz GUM maximum unilateral power gain (note1) IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 11.5 13.5 − dB F minimum noise figure Γs = Γopt; IC = 45 mA; VCE = 10 V; f = 500 MHz − 2.7 − dB Γs = Γopt; IC = 45 mA; VCE = 10 V; f = 1 GHz − 3 − dB VO output voltage note 2 − 500 − mV d2 second order intermodulation distortion note 3 − −51 − dB PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; RL = 50 Ω; − Tamb = 25 °C; measured at f = 1 GHz 21.5 − dBm ITO third order intercept point note 4 34 − dBm − Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 S 1 – S – 11 22 2. dim = −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; Vr = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz. 4. IC = 45 mA; VCE = 10 V; RL = 50 Ω; Tamb = 25 °C; fp = 1000 MHz; fq = 1001 MHz; measured at f(2p−q) and f(2q−p). September 1995 4 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 +VCC +VBB L3 10 kΩ L2 1 nF 1 nF L1 247 Ω 1 nF input 75 Ω output 75 Ω INPUT SLUG TUNER BIAS TEE input OUTPUT SLUG TUNER BIAS TEE output DUT TEST FIXTURE DUT 2 pF 33 Ω 33 Ω MBB780 MBB789 L1 = L3 = 5 µH micro-choke. L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm. Fig.2 Test circuit for second and third order intermodulation distortion. Fig.3 Measurement set-up for third order intercept point and 1 dB gain compression. MBB790 800 MCD087 120 handbook, halfpage handbook, halfpage P tot (mW) h FE 600 80 400 40 200 0 0 50 100 150 0 200 0 Ts (°C) 10 20 IC (mA) 30 VCE = 10 V; Tj = 25 °C Fig.4 Power derating curve. September 1995 Fig.5 5 DC current gain as a function of collector current. Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MBB791 1 MCD089 8 handbook, halfpage handbook, halfpage C re (pF) fT (GHz) 0.8 6 0.6 4 0.4 2 0.2 0 0 0 4 8 12 16 V CE (V) 0 10 20 30 40 I C (mA) IC = ic = 0; f = 1 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Fig.7 Feedback capacitance as a function of collector-emitter voltage. Transition frequency as a function of collector current. MBB792 MBB793 60 40 handbook, halfpage handbook, halfpage G UM G UM (dB) (dB) 30 40 20 20 10 0 40 0 400 f (MHz) 4000 10 Ic = 45 mA; VCE = 10 V. Ic = 20 mA; VCE = 8 V. Fig.8 Fig.9 Maximum unilateral power gain as a function of frequency. September 1995 6 102 103 f (MHz) 104 Maximum unilateral power gain as a function of frequency. Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MBB794 MBB795 30 20 handbook, halfpage handbook, halfpage G max gain (dB) (dB) 15 20 G max 10 G UM 10 5 0 10 102 103 f (MHz) 0 104 0 20 50 40 I C (mA) 30 VCE = 8 V; f = 1 GHz. Gmax = maximum available stable gain. GUM = maximum unilateral power gain. Ic = 20 mA; VCE = 8 V. Fig.10 Maximum available stable gain as a function of frequency. Fig.11 Gain as a function of collector current. MBB782 20 MBB781 20 handbook, halfpage handbook, halfpage d2 (dB) d3 (dB) 40 40 60 60 80 10 10 30 50 I C (mA) 80 70 10 30 50 I C (mA) 70 Ic = 45 mA; VCE = 10 V; f(p+q) = 810 MHz. See test circuit, Fig.2 Ic = 45 mA; VCE = 10 V; f(p+q−r) = 793.25 MHz. See test circuit, Fig.2 Fig.12 Second order intermodulation distortion as a function of collector current. Fig.13 Third order intermodulation distortion as a function of collector current. September 1995 7 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MCD094 4 handbook, halfpage F (dB) f = 2 GHz 3 1 GHz 500 MHz 2 1 0 1 10 I C (mA) 10 2 VCE = 8 V. Fig.14 Minimum noise figure as a function of collector current. September 1995 8 Philips Semiconductors Product specification NPN 6 GHz wideband transistor handbook, full pagewidth BFG94 stability circle 1 0.5 uns ta b le r e g io n 2 0.2 5 +j 0 0.2 0.5 F min B 80 d T OP 10 = 1. 2 5 10 ∞ 1 −j B 2d 10 dB 2.5 B 3d 0.2 5 B 4d B 5d 2 0.5 MBB788 1 Ic = 15 mA; VCE = 10 V; f = 500 MHz. Fig.15 Noise circle. 1 handbook, full pagewidth 0.5 2 0.2 5 dB 25 0 0.2 10 T 1 2 OP 5 10 ∞ 5 d dB B 10 3. 3 dB 2. 5 −j in Fm 0.5 = 2. dB +j dB 5 5 4 0.2 2 0.5 1 Ic = 15 mA; VCE = 10 V; f =1 GHz. Fig.16 Noise circle. September 1995 9 MBB787 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 50 handbook, full pagewidth 25 100 3 GHz 10 250 +j 10 0 25 50 100 250 ∞ –j 40 MHz 10 250 100 25 MBB784 50 IC = 45 mA; VCE = 10 V. ZO = 50 Ω. Fig.17 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 60° 150° 30° 3 GHz +ϕ 180° 0.5 0.4 0.3 0.2 0.1 0° 40 MHz −ϕ 30° 150° 60° 120° 90° MBB786 IC = 45 mA; VCE = 10 V. Fig.18 Common emitter forward transmission coefficient (S21). September 1995 10 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 90° handbook, full pagewidth 120° 60° 150° 30° 40 MHz +ϕ 50 180° 40 30 20 10 0° 3 GHz −ϕ 30° 150° 60° 120° MBB785 90° IC = 45 mA; VCE = 10 V. Fig.19 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 10 25 3 GHz 50 100 250 ∞ –j 40 MHz 250 10 100 25 50 MBB783 IC = 45 mA; VCE = 10 V. ZO = 50 Ω. Fig.20 Common emitter output reflection coefficient (S22). September 1995 11 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 September 1995 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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