Eon EN29F512-45TIP 512 kbit (64k x 8-bit) 5v flash memory Datasheet

EN29F512
EN29F512
512 Kbit (64K x 8-bit) 5V Flash Memory
FEATURES
• JEDEC Standard program and erase
commands
• 5.0V operation for read/write/erase
operations
• JEDEC standard DATA polling and toggle
bits feature
• Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
•
-
•
-
• Single Sector and Chip Erase
• Sector Unprotect Mode
Sector Architecture:
4 uniform sectors of 16Kbytes each
Supports full chip erase
Individual sector erase supported
Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• 0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
High performance program/erase speed
Byte program time: 7µs typical
Sector erase time: 300ms typical
Chip erase time: 1.5s typical
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
- 32-pin PDIP
- 32-pin PLCC
• Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
• Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized
into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of
16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F512 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
TABLE 1. PIN DESCRIPTION
FIGURE 1. LOGIC DIAGRAM
Vcc
Pin Name
Function
A0-A16
Addresses
DQ0-DQ7
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
Vcc
Supply Voltage
(5V ± 10% )
Vss
Ground
16
8
A0 - A15
DQ0 - DQ7
EN29F512
CE
OE
WE
Vss
TABLE 2. SECTOR ARCHITECTURE
Sector
ADDRESSES
SIZE (Kbytes)
A15
A14
3
0C000h – 0FFFFh
16
1
1
2
08000h – 0BFFFh
16
1
0
1
04000h - 07FFFh
16
0
1
0
00000h - 03FFFh
16
0
0
This Data Sheet may be revised by subsequent versions
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Rev. A, Issue Date: 2003/10/20
EN29F512
BLOCK DIAGRAM
Vcc
Vss
DQ0-DQ7
Block Protect Switches
Erase Voltage Generator
Input/Output Buffers
State
Control
WE
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE
OE
Vcc Detector
Timer
Address Latch
STB
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A15
This Data Sheet may be revised by subsequent versions
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Rev. A, Issue Date: 2003/10/20
EN29F512
FIGURE 2. PDIP
FIGURE 3. PLCC
FIGURE 4. TSOP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2003/10/20
EN29F512
TABLE 3. OPERATING MODES
512K FLASH USER MODE TABLE
USER MODE
STANDBY
READ
OUTPUT DISABLE
READ
MANUFACTURE ID
READ DEVICE ID
VERIFY SECTOR
PROTECTION
SECTOR
PROTECTION
VERIFY SECTOR
UNPROTECTION
SECTOR
UNPROTECTION
WRITE
WE
OE
A9
A8
A6
A1
A0
Ax/y
DQ(0-7)
H
L
L
L
X
H
H
H
X
L
H
L
X
A9
X
VID
X
A8
X
L/H
X
A6
X
L
X
A1
X
L
X
A0
X
L
X
Ax/y
Ax/y
X
L
L
H
H
L
L
VID
VID
X
X
L
L
L
H
H
L
X
X
HI-Z
DQ (0-7)
HI-Z
MANUFACTURE
ID
DEVICE ID
CODE
L
Pulse
L
H
VID
VID
X
L
X
X
X
X
L
VID
X
H
H
L
X
CODE
Pulse
L
L
VID
VID
X
H
H
L
X
X
H
A9
A8
A6
A1
A0
Ax/y
DIN (0-7)
CE
L
L
L
NOTES:
1) L = VIL, H = VIH, VID = 11.0V ± 0.5V
2) X = Don’t care, either VIH or VIL
3) Ax/y: Ax = Addr(x), Ay = Addr(y)
TABLE 4. DEVICE IDENTIFICTION
512K FLASH MANUFACTURER/DEVICE ID TABLE
A8
READ
MANUFACTURER ID
READ
DEVICE ID
A6
A1
A0
(1)
L
L
L
(2)
L
L
H
H
X
DQ(7-0)
HEX
MANUFACTURER ID
1C
DEVICE ID
21
NOTES:
1) If a Manufacturing ID is read with A8 = L, the chip will output a configuration code 7Fh. A further
Manufacturing ID must be read with A8 = H.
2) X = Don’t care
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
USER MODE DEFINITIONS
Standby Mode
The EN29F512 has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical).
It is placed in CMOS-compatible standby when the CE pin is at VCC ± 0.5. The device also has a
TTL-compatible standby mode, which reduces the maximum VCC current to < 1mA. It is placed in
TTL-compatible standby when the CE pin is at VIH. When in standby modes, the outputs are in a
high-impedance state independent of the OE input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is also ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same
exception. See “Erase Suspend/Erase Resume Commands” for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5
goes high, or while in the autoselect mode. See “Reset Command” section.
See also “Requirements for Reading Array Data” in the “Device Bus Operations” section for more
information. The Read Operations table provides the read parameters, and Read Operation Timings
diagram shows the timing diagram.
Output Disable Mode
When the OE pin is at a logic high level (VIH), the output from the EN29F512 is disabled. The
output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection
verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can also be accessed in-system through the
command register.
When using programming equipment, the autoselect mode requires VID (10.5 V to 11.5 V) on
address pin A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage
Method) table. In addition, when verifying sector protection, the sector address must appear on the
appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The
Command Definitions table shows the remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the
corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system; the host system can issue the autoselect command via
the command register, as shown in the Command Definitions table. This method does not require
VID. See “Command Definitions” for details on using the autoselect mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. A, Issue Date: 2003/10/20
EN29F512
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t care for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to reading
array data (also applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies during Erase Suspend).
Write Mode
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing
two unlock write cycles, followed by the program set-up command. The program address and data
are written next, which in turn initiate the Embedded Program algorithm. The system is not required
to provide further controls or timings. The device automatically provides internally generated
program pulses and verifies the programmed cell margin. Table 5 (Command Definitions) shows the
address and data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data
and addresses are no longer latched. The system can determine the status of the program operation
by using DQ7 or DQ6. See “Write Operation Status” for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be
programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to
“1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a
succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”.
COMMAND DEFINITIONS
The operations of the EN29F512 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Table (Table 5). Incorrect addresses, incorrect
data values or improper sequences will reset the device to the read mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 5. EN29F512 Command Definitions
st
Command
Sequence
Read/Reset
Write
Cycles
Req’d
1
nd
Write Cycle
Addr
Data
rd
2
Addr
th
3
Write Cycle
Data
Addr
th
4
Write Cycle
Data
Read
Reset
Read/Reset
AutoSelect
Manufacturer ID
AutoSelect Device ID
1
1
4
RA
RD
XXXh F0h
555h AAh
2AAh
55h
555h
F0h
4
555h
AAh
2AAh
55h
555h
90h
4
555h
AAh
2AAh
55h
555h
90h
AutoSelect Sector
Protect Verify
4
555h
AAh
2AAh
55h
555h
90h
Byte Program
Chip Erase
Sector Erase
Sector Erase Suspend
Sector Erase Resume
4
6
6
1
1
555h
555h
555h
xxxh
xxxh
AAh
AAh
AAh
B0h
30h
2AAh
2AAh
2AAh
55h
55h
55h
555h
555h
555h
A0h
80h
80h
Addr
RA
000h/
100h
01h
BA &
02h
PA
555h
555h
th
5
Write Cycle
Data
6
Write Cycle
Addr
Data
Write Cycle
Addr
RD
7Fh/
1Ch
21h
00h/
01h
PD
AAh 2AAh 55h
AAh 2AAh 55h
555h
BA
Notes:
RA = Read Address: address of the memory location to be read. This one is a read cycle.
RD = Read Data: data read from location RA during Read operation. This one is a read cycle.
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
BA = Sector Address: address of the Sector to be erased. Address bits A15-A14 uniquely select any Sector.
The data is 00h for an unprotected sector and 01h for a protected sector.
Byte Programming Command
Programming the EN29F512 is performed on a byte-by-byte basis using a four bus-cycle operation
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
When the program command is executed, no additional CPU controls or timings are necessary. An
internal timer terminates the program operation automatically. Address is latched on the falling edge
of CE or W E , whichever is last; data is latched on the rising edge of CE or W E , whichever is first.
The program operation is completed when EN29F512 returns the equivalent data to the
programmed location.
Programming status may be checked by sampling data on DQ7 ( DATA polling) or on DQ6 (toggle
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read
mode.
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations. The Command Definitions table shows the
address and data requirements for the chip erase command sequence.
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Rev. A, Issue Date: 2003/10/20
Data
10h
30h
EN29F512
Any commands written to the chip during the Embedded Erase algorithm are ignored.
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete,
the device returns to reading array data and addresses are no longer latched.
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in
“AC Characteristics” for parameters, and Chip/Sector Erase Operation Timings for timing waveforms.
Sector Erase Command
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded Erase
algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations.
This device does not support multiple sector erase commands. Sector Erase operation will
commence immediately after the first 30h command is written. The first sector erase operation must
finish before another sector erase command can be given.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or
DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the
algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the
sector erase operation. The Erase Suspend command is ignored if written during the chip erase operation
or Embedded Program algorithm. Addresses are “don’t-cares” when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to
any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.)
Normal read and write timings and command definitions apply. Reading at any address within erasesuspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status”
for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more
information.
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Rev. A, Issue Date: 2003/10/20
EN29F512
The system must write the Erase Resume command (address bits are “don’t care”) to exit the
erase suspend mode and continue the sector erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed erasing.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously
protected sectors.
Sector protection/unprotection must be implemented using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the control pins. Contact Eon Silicon Solution, Inc. for
an additional supplement on this feature.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
WRITE OPERATION STATUS
DQ7
DATA Polling
The EN29F512 provides DATA Polling on DQ7 to indicate to the host system the status of the
embedded operations. The DATA Polling feature is active during the Byte Programming, Sector
Erase, Chip Erase, and Erase Suspend. (See Table 6)
When the Byte Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the Byte Programming, an
attempt to read the device will produce the true data last written to DQ7. For the Byte Programming,
DATA polling is valid after the rising edge of the fourth WE or C E pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth
W E or CE pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last
rising edge of the sector erase W E or C E pulse.
DATA Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable ( OE ) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing
diagram is shown in Figure 8.
DQ6
Toggle Bit I
The EN29F512 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device
at any address (by toggling OE or CE ) will result in DQ6 toggling between “zero” and “one”. Once
the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be
read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the
rising edge of the fourth WE pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is
valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after
the last rising edge of the Sector Erase W E pulse. The Toggle Bit is also active during the sector
erase time-out window.
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Rev. A, Issue Date: 2003/10/20
EN29F512
In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 µs, then
stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all
selected sectors are protected, DQ6 will toggle for about 100 µs. The chip will then return to the read
mode without changing data in all protected sectors.
Toggling either CE or OE will cause DQ6 to toggle.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is
shown in Figure 9.
DQ5 Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1.” (The Toggle Bit (DQ6) should also be checked at this
time to make sure that the DQ5 is not a “1” due to the device having returned to read mode.) This is
a failure condition that indicates the program or erase cycle was not successfully completed. . DATA
Polling (DQ7), Toggle Bit (DQ6) and Erase Toggle Bit (DQ2) still function under this condition.
Setting the CE to VIH will partially power down the device under those conditions.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the reset command to return the device to reading
array data.
DQ2 Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle
Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the
system reads at addresses within those sectors that have been selected for erasure. (The system may
use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both
status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and
DQ6.
Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm. See
also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing
diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, a system would note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or erase operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully
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Rev. A, Issue Date: 2003/10/20
EN29F512
completed the program or erase operation. If it is still toggling, the device did not complete the operation
successfully, and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read
cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, the system must start at the beginning of the algorithm when it
returns to determine the status of the operation (top of Flowchart 6).
Table 6. Status Register Bits
DQ
Name
Logic Level
DQ7
Definition
Erase Complete or
erase Sector in Erase suspend
Erase On-Going
Program Complete or
data of non-erase Sector during Erase Suspend
DQ7
‘-1-0-1-0-1-0-1-’
DQ6
Program On-Going
Erase or Program On-going
Read during Erase Suspend
‘1’
7
6
DATA
POLLING
TOGGLE
BIT
‘0’
Erase Complete
‘-1-1-1-1-1-1-1-‘
5
ERROR BIT
2
TOGGLE
BIT
‘1’
‘0’
Program or Erase Error
Program or Erase On-going
Chip Erase, Erase or Erase suspend on
currently addressed
Sector. (When DQ5=1, Erase Error due to
currently addressed Sector. Program during
Erase Suspend on-going at current address
‘-1-0-1-0-1-0-1-’
Erase Suspend read on
non Erase Suspend Sector
DQ2
Notes:
DQ7 DATA
Polling: indicates the P/E status check during Program or Erase, and on completion before checking bits DQ5
for Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged.
Successive reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Error Bit: set to “1” if failure in programming or erase
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
DATA PROTECTION
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = VIL, W E = VIL and OE = VIH, the device will not accept commands on the rising edge of
WE.
Low VCC Write Inhibit
During VCC power-up or power-down, the EN29F512 locks out write cycles to protect against any
unintentional writes. If VCC < VLOK, the command register is disabled and all internal program or
erase circuits are disabled. Under this condition, the device will reset to the READ mode.
Subsequent writes will be ignored until VCC > VLKO.
Write “Noise” Pulse Protection
Noise pulses less than 5ns on OE , CE or WE will neither initiate a write cycle nor change the
command register.
Logical Inhibit
If CE =VIH or WE=VIH, writing is inhibited. To initiate a write cycle, CE and W E must be a logical
“zero”. If CE , W E , and OE are all logical zero (not recommended usage), it will be considered a
write.
Sector Protect and Unprotect
The hardware sector protection feature disables both program and erase operations in any sector.
The hardware sector unprotection feature re-enables both program and erase operation in
previously protected sectors.
Sector protection/unprotection must be implemented using programming equipment. The procedure
requires a high voltage (VID) on address pin A9 and the control pins. Contact Eon Silicon Solution,
Inc. for an additional supplement on this feature.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program
Command Sequence
(shown below)
Data Poll Device
Increment
Address
Last
No
Address?
Yes
Programming Done
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information.
555H / AAH
2AAH / 55H
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Flowchart 3. Embedded Erase
START
Write Erase
Command Sequence
(shown below)
Data Polling Device or Toggle Bit
Successfully Completed
ERASE Done
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Flowchart 4. Embedded Erase Command Sequence
See the Command Definitions section for more information.
Chip Erase
Sector Erase
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/80H
555H/80H
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/10H
Sector Address/30H
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Flowchart 5. DATA Polling Algorithm
Start
Read Data
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Data
DQ7 = Data?
Yes
No
Fail
Pass
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Flowchart 6. Toggle Bit Algorithm
Start
Read Data
DQ6 = Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Data
DQ6 = Toggle?
No
Yes
Fail
Pass
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . –0.5 V to 7.0 V
A9, OE# (Note 2) . . . . . . . . . . . . . . . –0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . –0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA
Notes:
1.
2.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot
VSS to –1.0V for periods of up to 50 ns and to –2.0 V for periods of up to 20 ns. See Left Figure below.
Maximum DC voltage on input and I/O pins is V CC + 0.5 V. During voltage transitions, input and I/O
pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Right Figure below.
Minimum DC input voltage on A9 pin is –0.5 V. During voltage transitions, A9 and OE# may
undershoot VSS to –1.0V for periods of up to 20 ns and to –2.0 V for periods of up to 20 ns. See Left
Figure. Maximum DC input voltage on A9 and OE# is 11.5 V which may overshoot to 12.5 V for
periods up to 20 ns.
No more than one output shorted to ground at a time. Duration of the short circuit should not be greater
than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T A ) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T A ). . . . . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for ± 5% devices . . . . . . . . . . . . +4.75 V to +5.25 V
VCC for ± 10% devices . . . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Maximum Negative Overshoot
Waveform
Maximum Positive Overshoot
Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
ILO
Max
Unit
0V≤ VIN ≤ Vcc
±5
µA
Output Leakage Current
0V≤ VOUT ≤ Vcc
±5
µA
ICC1
Supply Current (read) TTL Byte
CE = VIL; OE = VIH;
30
mA
ICC2
Supply Current (Standby) TTL
1.0
MA
ICC3
Supply Current (Standby) CMOS
CE = VIH
CE = Vcc ± 0.3V
5.0
µA
ICC4
Supply Current (Program or Erase)
Byte program, Sector or Chip
Erase in progress
30
mA
VIL
Input Low Voltage
-0.5
V
VIH
Input High Voltage
2
VOL
Output Low Voltage
IOL = 2 mA
0.8
Vcc +
0.5
0.45
VOH
Output High Voltage TTL
IOH = -2.5 mA
2.4
V
IOH = -100 µA
Vcc 0.4V
V
f = 6MHz
Output High Voltage CMOS
VID
A9 Voltage (Electronic Signature)
ILIT
A9 Current (Electronic Signature)
VLKO
Supply voltage (Erase and
Program lock-out)
Min
10.5
A9 = VID
3.2
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
V
11.5
V
100
µA
4.2
V
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
V
EN29F512
Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
JEDEC
Speed Options
Standard
Description
-45
-55
-70
tAVAV
tRC
Read Cycle Time
Min
45
55
70
90
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
Max
45
55
70
90
ns
tELQV
tCE
Chip Enable To Output Delay
OE = VIL
Max
45
55
70
90
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
30
35
ns
tEHQZ
tDF
Chip Enable to Output High Z
Max
10
15
20
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
10
15
20
20
ns
tAXQX
tOH
Addresses, CE or OE ,
whichever occurs first
Min
0
0
0
0
ns
Test Setup
-90
Unit
Output Hold Time from
Notes:
For -45, -55
For all others:
Vcc = 5.0V ± 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Vcc = 5.0V ± 10%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 20 ns
Input Pulse Levels: 0.45 V to 2.4 V
Timing Measurement Reference Level, Input and Output: 0.8 V and 2.0 V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
22
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 9. AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
-45
-55
-70
-90
Unit
Min
45
55
70
90
ns
Address Setup Time
Min
0
0
0
0
ns
tAH
Address Hold Time
Min
35
45
45
45
ns
tDVWH
tDS
Data Setup Time
Min
20
25
30
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
0
ns
MIn
0
0
0
0
ns
Min
10
10
10
10
ns
Min
0
0
0
0
ns
tOEH
Output Enable
Hold Time
Read
Toggle and
DATA Polling
Read Recovery Time before
tGHWL
tGHWL
tELWL
tCS
CE SetupTime
Min
0
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min
0
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
25
30
35
45
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Typ
7
7
7
7
µs
Programming Operation
Max
200
200
200
200
µs
tWHWH2
tWHWH2
Typ
0.3
0.3
0.3
0.3
s
Sector Erase Operation
Max
5
5
5
5
s
tWHWH3
tWHWH3
Typ
1.5
1.5
1.5
1.5
s
Chip Erase Operation
Max
17.5
17.5
17.5
17.5
s
tVCS
Vcc Setup Time
Min
50
50
50
50
µs
tVIDR
Rise Time to VID
Min
500
500
500
500
ns
Write ( OE High to W E Low)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVEL
tAS
tELAX
-45
-55
-70
-90
Unit
Min
45
55
70
90
ns
Address Setup Time
Min
0
0
0
0
ns
tAH
Address Hold Time
Min
35
45
45
45
ns
tDVEH
tDS
Data Setup Time
Min
20
25
30
45
ns
tEHDX
tDH
Data Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
0
ns
Min
0
0
0
0
ns
Min
10
10
10
10
ns
Min
0
0
0
0
ns
tGHEL
tGHEL
Read
Output
Enable
Toggle and
Hold Time
Data Polling
Read Recovery Time before
Write ( OE High to CE Low)
tWLEL
tWS
W E SetupTime
Min
0
0
0
0
ns
tEHWH
tWH
W E Hold Time
Min
0
0
0
0
ns
tELEH
tCP
Write Pulse Width
Min
25
30
35
45
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
Typ
7
7
7
7
µs
Programming Operation
Max
200
200
200
200
µs
tWHWH2
Typ
0.3
0.3
0.3
0.3
s
Sector Erase Operation
Max
5
5
5
5
s
tWHWH3
Typ
1.5
1.5
1.5
1.5
s
Chip Erase Operation
Max
17.5
17.5
17.5
17.5
s
tVCS
Vcc Setup Time
Min
50
50
50
50
µs
tVIDR
Rise Time to VID
Min
500
500
500
500
ns
tOEH
tWHWH
1
tWHWH
2
tWHWH
3
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
24
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Typ
Limits
Max
Unit
Sector Erase Time
0.3
5
sec
Chip Erase Time
1.5
17.5
sec
Byte Programming Time
7
200
µs
Chip Programming Time
0.5
1.25
sec
Erase/Program Endurance
100K
Parameter
cycles
Comments
Excludes 00H programming prior to
erasure
Excludes system level overhead
Minimum 100K cycles guaranteed
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to Vss on all pins except I/O pins
(including A9 and OE )
Input voltage with respect to Vss on all I/O Pins
Vcc Current
Min
Max
-1.0 V
12.0 V
-1.0 V
Vcc + 1.0 V
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
12
pF
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
26
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
SWITCHING WAVEFORMS
Figure 5. AC Waveforms for READ Operations
Figure 6. AC Waveforms for Chip/Sector Erase Operations
Notes:
1. SA is the Sector address for Sector erase.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
27
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
SWITCHING WAVEFORMS (continued)
Figure 7. Program Operation Timings
Notes:
1.
2.
3.
4.
5.
PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
/DQ7 is the output of the complement of the data written to the device.
DOUT is the output of data written to the device.
Figure indicates last two bus cycles of four bus cycle sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
Notes:
*DQ7 = Valid Data (The device has completed the embedded operation).
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm
Operations
Notes:
*DQ6 stops toggling (The device has completed the embedded operation).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
SWITCHING WAVEFORMS (continued)
Figure 10. Alternate /CE Controlled Write Operation Timings
Notes:
1.
2.
3.
4.
5.
PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
/DQ7 is the output of the complement of the data written to the device.
DOUT is the output of data written to the device.
Figure indicates last two bus cycles of four bus cycle sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
ORDERING INFORMATION
EN29F512
- 45
J
C
P
PACKAGING CONTENT
Blank= Conventional
P=Pb free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
P = 32 Plastic DIP
J = 32 Plastic PLCC
T = 32 Plastic 8mm x 20mm TSOP
S = 32 Plastic 8mm x 14mm TSOP
SPEED
45 = 45ns
55 = 55ns
70 = 70ns
90 = 90ns
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
29F = FLASH, 5V
512 = 64K x 8
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
PHYSICAL DIMENSIONS
PL 032 — 32-Pin Plastic Leaded Chip Carrier
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
PHYSICAL DIMENSIONS (continued)
PD 032 — 32-Pin Plastic DIP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
33
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
PHYSICAL DIMENSIONS (continued)
TS 032 — 32-Pin Standard Thin Small
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
34
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20
EN29F512
Revisions List
Revision No Description
Date
A
10/20/2003
Initial draft
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20