FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .N2 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation Max Units FMB200 700 5.6 180 mW mW/°C °C/W FMB200 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS IC = 10 µA, IB = 0 IC = 1.0 mA, IE = 0 60 V 45 V IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 6.0 Collector Cutoff Current ICES Collector Cutoff Current IEBO Emitter Cutoff Current BVCBO Collector-Base Breakdown Voltage BVCEO BVEBO Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage ICBO V 50 nA VCE = 40 V, IE = 10 50 nA VEB = 4.0 V, IC = 0 50 nA 450 350 0.2 0.4 0.85 1.0 V V V V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 100 µA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 5.0 V* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 80 100 100 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 300 Cobo NF Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 MHz pF Noise Figure IC = 100 µA, VCE = 5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 2.5 dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 °C 300 25 °C 200 100 0 0.01 - 40 °C 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 β = 10 0.2 0.15 25 °C 0.1 0.05 0 0.1 125 ºC - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 FMB200 PNP Multi-Chip General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 ºC 25 °C 125 ºC 0.6 0.4 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 V CE = 5V 0.2 0 0.1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 BV CER - BREAKDOWN VOLTAGE (V) 1 95 90 85 80 75 70 0.1 1 10 100 Input and Output Capacitance vs Reverse Voltage 4 100 Ta = 25°C 3 2 1000 RESISTANCE (kΩ ) Collector Saturation Region Ic = 100 uA 300 mA 50 mA 1 f = 1.0 MHz CAPACITANCE (pF) VCE - COLLECTOR-EMITTER VOLTAGE (V) ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs. Ambient Temperature 100 1 10 I C - COLLECTOR CURRENT (mA) 10 Cib Cob 0 100 300 700 I B - BASE CURRENT (uA) 2000 4000 0.1 1 10 Vce - COLLECTOR VOLTAGE(V) 100 FMB200 PNP Multi-Chip General Purpose Amplifier (continued) (continued) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 300 40 270 Vce = 5V ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 1 10 20 50 100 150 0 10 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) P 68 Power Dissipation vs Ambient Temperature 1 SOT-6 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) tr td I C- COLLECTOR CURRENT (mA) PD - POWER DISSIPATION (W) f T - GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics 125 150 300 FMB200 PNP Multi-Chip General Purpose Amplifier