IRF IRF7907PBF Hexfetr power mosfet Datasheet

PD - 97066
IRF7907PbF
HEXFET® Power MOSFET
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for RG
l Lead-Free
VDSS
RDS(on) max
ID
30V
Q1 16.4m:@VGS = 10V
Q2 11.8m:@VGS = 10V
9.1A
11A
S2
1
8
D2
G2
2
7
D2
S1
3
6
D1
G1
4
5
D1
SO-8
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
9.1
11
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
7.3
8.8
IDM
Pulsed Drain Current c
76
85
Units
V
A
PD @TA = 25°C
Power Dissipation
2.0
2.0
PD @TA = 70°C
Power Dissipation
1.3
1.3
0.016
0.016
TJ
Linear Derating Factor
Operating Junction and
W/°C
°C
TSTG
Storage Temperature Range
Q2 Max.
Units
20
20
°C/W
62.5
62.5
-55 to + 150
W
Thermal Resistance
RθJL
Parameter
Junction-to-Drain Lead g
RθJA
Junction-to-Ambient fg
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Q1 Max.
1
1/4/06
IRF7907PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Q1&Q2
Q1
Q2
Q1
Q2
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
0.024
13.7
17.1
9.8
11.5
1.8
-4.6
-4.9
–––
–––
–––
–––
–––
–––
6.7
14
1.3
3.0
0.7
1.3
2.5
4.9
2.2
4.8
3.2
6.2
4.5
9.0
2.6
3.0
6.0
8.0
9.3
14
8.0
13
3.4
5.3
850
1790
190
390
88
190
Max.
–––
–––
–––
16.4
20.5
11.8
13.7
2.35
–––
–––
1.0
150
100
-100
–––
–––
10
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.7
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
Units
VGS = 0V, ID = 250µA
V
V/°C Reference to 25°C, ID = 1mA
e
e
e
e
VGS = 10V, ID = 9.1A
VGS = 4.5V, ID = 7.3A
VGS = 10V, ID = 11A
VGS = 4.5V, ID = 8.8A
Q1: VDS = VGS, ID = 25µA
V
mV/°C Q2: VDS = VGS, ID = 50µA
mΩ
µA
nA
S
nC
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 7.0A
VDS = 15V, ID = 8.8A
Q1
VDS = 15V
VGS = 4.5V, ID = 7.0A
Q2
VDS = 15V
VGS = 4.5V, ID = 8.8A
nC
VDS = 16V, VGS = 0V
Ω
Q1
VDD = 15V, VGS = 4.5V
ID = 7.0A
ns
Q2
VDD = 15V, VGS = 4.5V
ID = 8.8A
Clamped Inductive Load
pF
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Q1 Max.
10
7.0
Q2 Max.
15
8.8
Units
mJ
A
Diode Characteristics
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS
ISM
2
c
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
12
16
4.1
5.9
Max.
2.8
2.8
76
85
1.0
1.0
18
24
6.1
8.9
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.3A, VGS = 0V
V
TJ = 25°C, IS = 8.8A, VGS = 0V
Q1 TJ = 25°C, IF = 7.0A,
ns
VDD = 15V, di/dt = 100A/µs
nC Q2 TJ = 25°C, IF = 8.8A,
VDD = 15V, di/dt = 100A/µs
e
e
e
e
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IRF7907PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
100
100
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
2.3V
≤ 60µs PULSE WIDTH
Tj = 25°C
10
BOTTOM
1
0.1
2.3V
0.1
1
10
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 25°C
0.01
0.01
10
2.3V
≤ 60µs PULSE WIDTH
Tj = 150°C
1
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
2.3V
≤ 60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
100.0
10.0
ID, Drain-to-Source Current(Α)
100.0
ID, Drain-to-Source Current(Α)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TJ = 150°C
1.0
TJ = 25°C
VDS = 15V
10.0
TJ = 150°C
1.0
TJ = 25°C
VDS = 15V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
0.1
0.1
1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Transfer Characteristics
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3
IRF7907PbF
Typical Characteristics
Q1 - Control FET
10000
Q2 - Synchronous FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
Coss = Cds + Cgd
C, Capacitance (pF)
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
Coss
Crss
100
Ciss
1000
Coss
Crss
10
100
1
10
100
1
10
VDS , Drain-to-Source Voltage (V)
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
12
12
VDS = 24V
10
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
ID= 7.0A
VDS= 15V
VDS= 6.0V
8
6
4
2
ID= 8.8A
10
8
6
4
2
0
0
0
4
8
12
0
16
5
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
10
1
100µsec
10msec
0.1
100msec
TA = 25°C
Tj = 150°C
Single Pulse
15
20
25
30
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
10
QG Total Gate Charge (nC)
QG Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
1msec
10
1
0.1
10msec
100msec
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
VDS = 24V
VDS= 15V
VDS= 6.0V
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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IRF7907PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
1.5
RDS(on) , Drain-to-Source On Resistance
1.5
RDS(on) , Drain-to-Source On Resistance
ID = 9.1A
(Normalized)
(Normalized)
VGS = 10V
1.0
VGS = 10V
1.0
0.5
0.5
-60 -40 -20
0
20
40
60
-60 -40 -20
80 100 120 140 160
Fig 13. Normalized On-Resistance vs. Temperature
20
40
60
80 100 120 140 160
Fig 14. Normalized On-Resistance vs. Temperature
100.0
ISD , Reverse Drain Current (A)
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
0.4
0.6
0.8
1.0
1.2
1.4
1.0
TJ = 25°C
0.1
0.1
0.2
TJ = 150°C
10.0
VGS = 0V
VGS = 0V
0.2
1.6
40
ID = 8.8A
30
TJ = 125°C
20
TJ = 25°C
10
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
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0.6
0.8
1.0
1.2
1.4
1.6
Fig 16. Typical Source-Drain Diode Forward Voltage
RDS (on), Drain-to -Source On Resistance (mΩ)
Fig 15. Typical Source-Drain Diode Forward Voltage
2
0.4
VSD , Source-to-Drain Voltage (V)
VSD , Source-to-Drain Voltage (V)
RDS (on), Drain-to -Source On Resistance (mΩ)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
ISD , Reverse Drain Current (A)
ID = 11A
40
ID = 11A
30
20
TJ = 125°C
10
TJ = 25°C
0
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5
IRF7907PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
12
10
10
ID, Drain Current (A)
ID, Drain Current (A)
8
6
4
2
8
6
4
2
0
0
25
50
75
100
125
25
150
50
Fig 19. Maximum Drain Current vs. Ambient Temp.
150
2.2
VGS(th, Gate threshold Voltage (V)
VGS(th, Gate threshold Voltage (V)
125
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.2
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
TJ, Temperature ( °C )
0
25
50
75
100
125
150
TJ, Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
60
EAS, Single Pulse Avalanche Energy (mJ)
50
EAS, Single Pulse Avalanche Energy (mJ)
100
TJ, Ambient Temperature (°C)
TJ, Ambient Temperature (°C)
ID
3.0A
3.5A
BOTTOM 7.0A
TOP
40
30
20
10
ID
3.8A
4.4A
BOTTOM 8.8A
TOP
50
40
30
20
10
0
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
75
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current
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IRF7907PbF
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τa
τ2
τ1
τ2
τ3
τ4
τ3
τ4
Ci= τi/Ri
Ci i/Ri
0.1
Ri (°C/W) τι (sec)
2.288789 0.000137
7.167906 0.014957
36.98193 0.72461
16.07333
26.8
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
τJ
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τa
τ2
τ1
τ2
τ3
τ4
τ3
τ4
Ci= τi/Ri
Ci i/Ri
0.1
Ri (°C/W) τι (sec)
1.848416 0.000164
11.29818 0.054158
34.97452 0.9598
14.3858
38.2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
L
S2
1
8
D2
G2
2
7
D2
S1
3
6
D1
G1
4
5
D1
Co
Vo
Cin
GND
Vin
Fig 27. Layout Diagram
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7
IRF7907PbF
Driver Gate Drive
D.U.T
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 29a. Unclamped Inductive Test Circuit
Fig 29b. Unclamped Inductive Waveforms
VDS
15V
90%
DRIVER
L
VDS
10%
D.U.T
RG
+
V
- DD
IAS
20V
A
VGS
td(on)
0.01Ω
tp
Fig 30a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
tr
td(off)
Fig 30b. Switching Time Waveforms
Id
Vds
Vgs
50KΩ
12V
tf
.2µF
.3µF
D.U.T.
+VDS
Vgs(th)
VGS
-3mA
IG
ID
Current Sampling Resistors
Fig 31a. Gate Charge Test Circuit
8
Qgs1 Qgs2
Qgd
Qgodr
Fig 31b. Gate Charge Waveform
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IRF7907PbF
SO-8 Package Details
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A1
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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9
IRF7907PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, Q1: L = 0.41mH, RG = 25Ω, IAS = 7.0A;
Q2: L = 0.38mH, RG = 25Ω, IAS = 8.8A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
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