Ordering number : ENA0413A 2SC6098 Bipolar Transistor http://onsemi.com 80V, 2.5A, Low VCE(sat), NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation • • Large current capacity High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit 120 V 120 V VCEO 80 V VEBO 6.5 V Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.5 3 2.3 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1 2 2.5 0.8 0.8 1.6 0.85 1.2 1.2 5.5 0.85 0.7 3 0 to 0.2 1.2 2.3 2SC6098-TL-E 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SC6098-E 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 C6098 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/53006EA MSIM TB-00002377 No. A0413-1/9 2SC6098 Continued from preceding page. Parameter Symbol Collector Current Conditions Ratings Unit 2.5 Collector Current (Pulse) IC ICP Base Current IB 500 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 4 Tc=25°C A A mA 0.8 W 15 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings min typ VCE=5V, IC=100mA 300 VCE=10V, IC=500mA VCE(sat)1 VCE(sat)2 Unit max VCB=70V, IE=0A VEB=4V, IC=0A fT Cob Output Capacitance Conditions 1 μA 1 μA 600 350 VCB=10V, f=1MHz IC=1A, IB=50mA MHz 14 IC=1A, IB=100mA IC=1A, IB=100mA pF 110 165 mV 100 150 mV 0.9 1.2 V VBE(sat) V(BR)CBO IC=10μA, IE=0A 120 V V(BR)CES IC=100μA, RBE=0Ω 120 V V(BR)CEO IC=1mA, RBE=∞ 80 V V(BR)EBO ton IE=10μA, IC=0A 6.5 tstg tf See specified Test Circuit. V 40 ns 920 ns 32 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=40V IC=10IB1= --10IB2=0.5A Ordering Information Device 2SC6098-E 2SC6098-TL-E Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free No. A0413-2/9 2SC6098 IC -- VCE 2.0 VCE=5V 2mA 1mA 0.4 0.5 IB=0mA 0 0 0.2 0.4 0.6 0.8 0 0 1.0 Collector-to-Emitter Voltage, VCE -- V DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz Ta=75°C 25°C --25°C 100 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 1.0 VCE=10V 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 3 IT11061 VCE(sat) -- IC 5 5 2 Collector Current, IC -- A IT11060 7 1.2 IT11059 5 10 0.01 5 Cob -- VCB 100 0.8 7 2 3 0.01 0.6 f T -- IC 1000 7 3 0.4 Base-to-Emitter Voltage, VBE -- V VCE=5V 5 0.2 IT11058 hFE -- IC 1000 1.0 --25°C 5mA 0.8 1.5 C 25°C 10mA 2.0 Ta=7 5° 80mA 20mA A 1.2 Collector Current, IC -- A 60mA 40mA 100m Collector Current, IC -- A 1.6 IC -- VBE 2.5 3 2 0.1 7 °C 75 5 = Ta 3 5 --2 2 °C °C 25 0.01 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11062 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 °C 75 5 = Ta 3 °C 25 -- 2 °C 25 5 IC / IB=10 IC / IB=20 2 3 IT11063 VBE(sat) -- IC 3 3 2 Collector Current, IC -- A VCE(sat) -- IC 5 2 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11064 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11065 No. A0413-3/9 2SC6098 ASO ICP=4A 10 Op 2 0m s s ati on 0.1 7 5 m 0μ s s 10 1.0 7 5 0m s 3 2 0.1 7 5 3 3 Ta=25°C Single Pulse 2 0.01 0.1 2 3 Tc=25°C Single Pulse 2 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 0.01 0.1 5 7 100 IT11066 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 0.9 5 7 100 IT11067 PC -- Tc 17.5 0.8 15.0 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 10 n tio era Op er 3 1m 3 2 s DC 0μ s s 1m 1.0 7 5 m <10μs 50 IC=2.5A DC Collector Current, IC -- A 10 ICP=4A s 0μ 10 3 2 50 s 0μ 10 IC=2.5A ASO 7 5 <10μs Collector Current, IC -- A 7 5 0.7 0.6 0.5 0.4 0.3 0.2 12.5 10.0 7.50 5.00 2.50 0.1 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11068 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11069 No. A0413-4/9 2SC6098 Taping Specification 2SC6098-TL-E No. A0413-5/9 2SC6098 Outline Drawing 2SC6098-TL-E Land Pattern Example Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A0413-6/9 2SC6098 Bag Packing Specification 2SC6098-E No. A0413-7/9 2SC6098 Outline Drawing 2SC6098-E Mass (g) Unit 0.315 mm * For reference No. A0413-8/9 2SC6098 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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