Zetex BSS80C Sot23 pnp silicon planar switching transistor Datasheet

SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 95
✪
BSS80B
BSS80C
PARTMARKING DETAIL —
BSS80B - CH
BSS80C - CJ
C
E
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
Peak Pulse Current
ICM
-800
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
V
°C
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-60
V
IC=-10µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-40
V
IC=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
Collector Cut-Off
Current
ICBO
-10
-10
µA
nA
VCB=-50V,
VCB=-50V, Ta=150oC
Emitter Cut-Off
Current
IEBO
-10
nA
VBE=-3V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4
-1.6
mV
V
IC=-150mA,VCE=-10V
IC=-150mA,VCE=-10V
Static Forward
Current
Transfer Ratio
Transition Frequency
BSS80B
BSS80C
hFE
40
100
fT
200
MAX.
UNIT
IE=-10mA
120
300
IC=150mA,VCE=10V
IC=150mA,VCE=10V
MHz
VCE=-20V,IC=-50mA
f=100MHz
VCB=-10V,f=1MHz
Output Capacitance
Cobo
8
pF
Delay Time
td
10
ns
Rise Time
tr
40
ns
Storage Time
ts
80
ns
Fall Time
tf
30
ns
PAGE NUMBER
VCC=-30V, IC=-150mA
IB1=-IB2=-15mA
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