380B CY7C1380B CY7C1382B 512K x 36/1M x 18 Pipelined SRAM Features isters controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd and BWE), and Global Write (GW). • • • • • • • • • • • Fast clock speed: 200, 167, 150, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.0, 3.4, 3.8, and 4.2 ns Optimal for depth expansion 3.3V (–5% / +10%) power supply Common data inputs and data outputs Byte Write Enable and Global Write control Chip enable for address pipeline Address, data, and control registers Internally self-timed Write Cycle Burst control pins (interleaved or linear burst sequence) • Automatic power-down available using ZZ mode or CE deselect • High-density, high-speed packages • JTAG boundary scan for BGA packaging version Asynchronous inputs include the Output Enable (OE) and burst mode control (MODE). DQa,b,c,d and DPa,b,c,d apply to CY7C1380B and DQa,b and DPa,b apply to CY7C1382B. a, b, c, d each are 8 bits wide in the case of DQ and 1 bit wide in the case of DP. Addresses and chip enables are registered with either Address Status Processor (ADSP) or Address Status Controller (ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate self-timed WRITE cycle. WRITE cycles can be one to four bytes wide as controlled by the write control inputs. Individual byte write allows individual byte to be written. BWa controls DQa and DPa. BWb controls DQb and DPb. BWc controls DQc and DPc. BWd controls DQd and DPd. BWa, BWb, BWc, and BWd can be active only with BWE being LOW. GW being LOW causes all bytes to be written. WRITE pass-through capability allows written data available at the output for the immediately next READ cycle. This device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance. Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. The CY7C1380B and CY7C1382B SRAMs integrate 524,288x36 and 1,048,576x18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by reg- All inputs and outputs of the CY7C1380B and the CY7C1382B are JEDEC standard JESD8-5 compatible. Selection Guide 200 MHz Maximum Access Time (ns) Maximum Operating Current (mA) Commercial Maximum CMOS Standby Current (mA) Cypress Semiconductor Corporation Document #: 38-05267 Rev. *A • 167 MHz 150 MHz 133 MHz 3.0 3.4 3.8 4.2 315 285 265 245 20 20 20 20 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised October 8, 2001 CY7C1380B CY7C1382B Logic Block Diagram CY7C1380B - 512K x 36 MODE (A[1;0]) 2 BURST Q0 CE COUNTER Q1 CLR CLK ADV ADSC ADSP Q A[18:0] 19 GW 17 DQd, DPd BYTEWRITE REGISTERS DQc, DPc BYTEWRITE REGISTERS Q D DQb, DPb BYTEWRITE REGISTERS Q D DQa, DPa BYTEWRITE REGISTERS Q D BWE BW d D BWc BWb BWa CE1 CE2 CE3 D ENABLE CE REGISTER 19 17 ADDRESS CE REGISTER D 512KX36 MEMORY ARRAY Q 36 36 Q D ENABLE DELAY Q REGISTER INPUT REGISTERS CLK OUTPUT REGISTERS CLK OE SLEEP CONTROL ZZ DQa,b,c,d DPa,b Logic Block Diagram CY7C1382B - 1M x 18 MODE (A[1;0]) 2 BURST Q0 CE COUNTER Q1 CLR CLK ADV ADSC ADSP A[19:0] GW Q 19 BWE BW b 17 DQb, DPb BYTEWRITE REGISTERS DQa, DPa BYTEWRITE REGISTERS Q D ENABLE CE CE REGISTER Q D D BWa CE1 CE2 CE3 ADDRESS CE REGISTER D 17 19 1M X 18 MEMORY ARRAY Q 18 D ENABLE DELAY Q REGISTER OUTPUT REGISTERS CLK 18 INPUT REGISTERS CLK OE ZZ SLEEP CONTROL DQa,b DPa,b Document #: 38-05267 Rev. *A Page 2 of 34 CY7C1380B CY7C1382B 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1382B (1M x 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 Document #: 38-05267 Rev. *A A NC NC VDDQ VSSQ NC DPa DQa DQa VSSQ VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSSQ DQa DQa NC NC VSSQ VDDQ NC NC NC A A A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPb NC NC DQb NC DQb V VDDQ DDQ V VSSQ SSQ NC DQb NC DQb DQb DQb DQb DQb VSSQ VSSQ VDDQ VDDQ DQb DQb DQb DQb NC VSS VDD NC NC VDD VSS ZZ DQb DQa DQa DQb VDDQ VDDQ VSSQ VSSQ DQa DQb DQa DQb DQa DPb NC DQa VSSQ VSSQ VDDQ VDDQ NC DQa NC DQa DQPa NC MODE A A A A A1 A0 NC NC VSS VDD CY7C1380B (512K X 36) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 NC NC VSS VDD A A A A A A A A A DQPc DQc DQc VDDQ VSSQ DQc DQc DQc DQc VSSQ VDDQ DQc DQc NC VDD NC VSS DQd DQd VDDQ VSSQ DQd DQd DQd DQd VSSQ VDDQ DQd DQd DQPd A A CE1 CE2 NC NC BWb BWa CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 100-Pin TQFP (Top View) 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 BWd BWc BWb BWa CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A Pin Configurations Page 3 of 34 CY7C1380B CY7C1382B Pin Configurations (continued) CY7C1380B (512K x 36) 1 2 3 A VDDQ A B C NC NC A A D DQc 4 5 6 7 A ADSP A A VDDQ A A ADSC VDD A A A A NC NC DPc VSS NC VSS DPb DQb E DQc DQc VSS CE1 VSS DQb DQb F VDDQ DQc VSS OE VSS DQb VDDQ G H J K DQc DQc VDDQ DQc DQc VDD BWc VSS NC ADV GW VDD BWb VSS NC DQb DQb VDD DQb DQb VDDQ DQd DQd VSS CLK VSS DQa DQa L M N DQd VDDQ DQd DQd DQd DQd BWd VSS VSS NC BWE A1 BWa VSS VSS DQa DQa DQa DQa VDDQ DQa P DQd DPd VSS A0 VSS DPa DQa R NC A MODE VDD VDD A NC T U NC VDDQ 64M TMS A TDI A TCK A TDO 32M NC ZZ VDDQ 4 5 6 7 CY7C1382B (1M x 18) 1 2 3 A VDDQ A A ADSP A A VDDQ B C NC NC A A A A ADSC VDD A A A A NC NC D DQb NC VSS NC VSS DPa NC E F NC VDDQ DQb NC VSS VSS CE1 OE VSS VSS NC DQa DQa VDDQ G H J NC DQb VDDQ DQb NC VDD BWb VSS NC ADV GW VDD VSS VSS NC NC DQa VDD DQa NC VDDQ K NC DQb VSS CLK VSS NC DQa L DQb NC VSS NC BWa DQa NC M VDDQ DQb VSS BWE VSS NC VDDQ N DQb NC VSS A1 VSS DQa NC P NC DPb VSS A0 VSS NC DQa R NC A MODE VDD VDD A NC T 64M A A 32M A A ZZ U VDDQ TMS TDI TCK TDO NC VDDQ Document #: 38-05267 Rev. *A Page 4 of 34 CY7C1380B CY7C1382B Pin Configurations (continued) 165-Ball Bump FBGA CY7C1380B (512K x 36) - 11 x 15 FBGA 1 2 3 4 5 6 7 8 9 10 11 A NC A CE1 BWc BWb CE3 BWE ADSC ADV A NC B C D E F G H J K L M N P NC DPc A NC CE2 VDDQ BWd VSS BWa VSS CLK VSS GW VSS OE VSS ADSP VDDQ A NC 128M DPb DQb R DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb DQc DQc VDDQ VDD VSS VSS VSS DQb DQc VDDQ VDD VSS VSS VSS VDDQ VDDQ DQb DQc VDD VDD DQb DQb VDD DQd VSS DQd NC VDDQ VDD VDD VSS VSS VSS VSS VSS VSS VDD VDD NC VDDQ NC DQa ZZ DQa DQd DQd DQd DQd VDDQ VDDQ VDD VDD VSS VSS VSS VSS VSS VSS VDD VDDQ VDD VDDQ DQa DQa DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DPd NC VDDQ VSS NC A VSS VSS VDDQ NC DPa NC 64M A A TDI A1 TDO A A A A MODE 32M A A TMS A0 TCK A A A A 11 CY7C1382B (1M x 18) - 11 x 15 FBGA 1 2 3 4 5 6 7 8 9 10 A NC A CE1 BWb NC CE3 BWE ADSC ADV A A B C D E F G H J K L M N P NC NC A NC CE2 VDDQ NC VSS BWa VSS CLK VSS GW VSS OE VSS ADSP VDDQ A NC 128M DPa NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa R NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa VDD DQb VSS NC NC VDDQ VDD VDD VSS VSS VSS VSS VSS VSS ZZ NC NC NC VDDQ VDDQ VDD VDD VSS VSS VSS VSS VSS VSS NC VDDQ VDDQ NC DQa DQb DQb VDD VDD VDD VDD VDDQ DQa DQa NC NC DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC DPb NC VDDQ VSS NC A VSS VSS VDDQ NC NC NC 64M A A TDI A1 TDO A A A A MODE 32M A A TMS A0 TCK A A A A Document #: 38-05267 Rev. *A Page 5 of 34 CY7C1380B CY7C1382B Pin Definitions Name I/O Description A0 A1 A InputSynchronous Address Inputs used to select one of the address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. BWa BWb BWc BWd InputSynchronous Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. GW InputSynchronous Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWa,b,c,d and BWE). BWE InputSynchronous Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. CLK Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. CE1 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE2 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device.(TQFP Only) CE3 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device.(TQFP Only) OE InputAsynchronous Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. ADV InputSynchronous Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically increments the address in a burst cycle. ADSP InputSynchronous Address Strobe from Processor, sampled on the rising edge of CLK. When asserted LOW, A is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. ADSC InputSynchronous Address Strobe from Controller, sampled on the rising edge of CLK. When asserted LOW, A[x:0] is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. MODE Input Pin Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDDQ or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. ZZ InputAsynchronous ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition with data integrity preserved. DQa, DPa DQb, DPb DQc, DPc DQd, DPd I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by AX during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQx and DPx are placed in a three-state condition.DQ a,b,c and d are 8 bits wide. DP a,b,c and d are 1 bit wide. TDO JTAG serial output Synchronous Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. (BGA Only) Document #: 38-05267 Rev. *A Page 6 of 34 CY7C1380B CY7C1382B Pin Definitions Name I/O Description TDI JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK.(BGA Only) TMS Test Mode Select Synchronous This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK. (BGA Only) TCK JTAG Serial Clock Serial clock to the JTAG circuit. (BGA Only) VDD Power Supply Power supply inputs to the core of the device. Should be connected to 3.3V –5% +10% power supply. VSS Ground Ground for the core of the device. Should be connected to ground of the system. VDDQ I/O Power Supply Power supply for the I/O circuitry. Should be connected to a 2.5 –5% –3.3V 10% power supply. VSSQ I/O Ground Ground for the I/O circuitry. Should be connected to ground of the system. 32M 64M 128M - No connects. Reserved for address expansion. Pins are not internally connected. NC - No connects. Pins are not internally connected. Document #: 38-05267 Rev. *A Page 7 of 34 CY7C1380B CY7C1382B Introduction (GW, BWE, and BWx) and ADV inputs are ignored during this first cycle. Functional Overview ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQx inputs is written into the corresponding address location in the RAM core. If GW is HIGH, then the write operation is controlled by BWE and BWx signals. The CY7C1380B/CY7C1382B provides byte write capability that is described in the Write Cycle Description table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWa,b,c,d for CY7C1380B & BWa,b for CY7C1382B) input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 4.2 ns (133-MHz device). The CY7C1380B/CY7C1382B supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium® and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWa,b,c,d for CY7C1380 and BWa,b for CY7C1382) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Synchronous Chip Selects (CE1, CE2, CE3 for TQFP / CE1 for BGA) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) chip selects are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs is stored into the address advancement logic and the Address Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 3.0 ns (200-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) chip select is asserted active. The address presented is loaded into the address register and the address advancement logic while being delivered to the RAM core. The write signals Document #: 38-05267 Rev. *A Because the CY7C1380B/CY7C1382B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will three-state the output drivers. As a safety precaution, DQ are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) chip select is asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWx) are asserted active to conduct a write to the desired byte(s). ADSC triggered write accesses require a single clock cycle to complete. The address presented to A[17:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQ[x:0] is written into the corresponding address location in the RAM core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the CY7C1380B/CY7C1382B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[x:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[x:0] are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1380B/CY7C1382B provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel® Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both read and write burst operations are supported. Page 8 of 34 CY7C1380B CY7C1382B Interleaved Burst Sequence Linear Burst Sequence First Address Second Address Third Address Fourth Address First Address Second Address Third Address Fourth Address A[1:0]] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] A[1:0] 00 01 10 11 00 01 10 11 01 00 11 10 01 10 11 00 10 11 00 01 10 11 00 01 11 10 01 00 11 00 01 10 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. ZZ Mode Electrical Characteristics Parameter Description Test Conditions IDDZZ Sleep mode standby current tZZS tZZREC Max. Unit ZZ > VDD – 0.2V 20 mA Device operation to ZZ ZZ > VDD – 0.2V 2tCYC ns ZZ recovery time ZZ < 0.2V Document #: 38-05267 Rev. *A Min. 2tCYC ns Page 9 of 34 CY7C1380B CY7C1382B Cycle Descriptions[1, 2, 3, 4] Next Cycle Add. Used ZZ CE3 CE2 CE1 ADSP ADSC ADV OE DQ Write Unselected None 0 X X 1 X 0 X X Hi-Z X Unselected None 0 1 X 0 0 X X X Hi-Z X Unselected None 0 X 0 0 0 X X X Hi-Z X Unselected None 0 1 X 0 1 0 X X Hi-Z X Unselected None 0 X 0 0 1 0 X X Hi-Z X Begin Read External 0 0 1 0 0 X X X Hi-Z X Begin Read External 0 0 1 0 1 0 X X Hi-Z Read Continue Read Next 0 X X X 1 1 0 1 Hi-Z Read Continue Read Next 0 X X X 1 1 0 0 DQ Read Continue Read Next 0 X X 1 X 1 0 1 Hi-Z Read Continue Read Next 0 X X 1 X 1 0 0 DQ Read Suspend Read Current 0 X X X 1 1 1 1 Hi-Z Read Suspend Read Current 0 X X X 1 1 1 0 DQ Read Suspend Read Current 0 X X 1 X 1 1 1 Hi-Z Read Suspend Read Current 0 X X 1 X 1 1 0 DQ Read Begin Write Current 0 X X X 1 1 1 X Hi-Z Write Begin Write Current 0 X X 1 X 1 1 X Hi-Z Write Begin Write External 0 0 1 0 1 0 X X Hi-Z Write Continue Write Next 0 X X X 1 1 0 X Hi-Z Write Continue Write Next 0 X X 1 X 1 0 X Hi-Z Write Suspend Write Current 0 X X X 1 1 1 X Hi-Z Write Suspend Write Current 0 X X 1 X 1 1 X Hi-Z Write ZZ “sleep” None 1 X X X X X X X Hi-Z X Notes: 1. X =”Don't Care.” 1 = HIGH, 0 = LOW. 2. Write is defined by BWE, BWx, and GW. See Write Cycle Descriptions table. 3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 4. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has a single chip select CE1. Document #: 38-05267 Rev. *A Page 10 of 34 CY7C1380B CY7C1382B Write Cycle Descriptions Function (1380) GW BWE BWd BWc BWb BWa Read 1 1 X X X X Read 1 0 1 1 1 1 Write Byte 0 - DQa 1 0 1 1 1 0 Write Byte 1 - DQb 1 0 1 1 0 1 Write Bytes 1, 0 1 0 1 1 0 0 Write Byte 2 - DQc 1 0 1 0 1 1 Write Bytes 2, 0 1 0 1 0 1 0 Write Bytes 2, 1 1 0 1 0 0 1 Write Bytes 2, 1, 0 1 0 1 0 0 0 Write Byte 3 - DQd 1 0 0 1 1 1 Write Bytes 3, 0 1 0 0 1 1 0 Write Bytes 3, 1 1 0 0 1 0 1 Write Bytes 3, 1, 0 1 0 0 1 0 0 Write Bytes 3, 2 1 0 0 0 1 1 Write Bytes 3, 2, 0 1 0 0 0 1 0 Write Bytes 3, 2, 1 1 0 0 0 0 1 Write All Bytes 1 0 0 0 0 0 Write All Bytes 0 X X X X X Function (1382) GW BWE BWb BWa Read 1 1 X X Read 1 0 1 1 Write Byte 0 - DQ[7:0] and DP0 1 0 1 0 Write Byte 1 - DQ[15:8] and DP1 1 0 0 1 Write All Bytes 1 0 0 0 Write All Bytes 0 X X X Document #: 38-05267 Rev. *A Page 11 of 34 CY7C1380B CY7C1382B IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1380B/CY7C1382B incorporates a serial boundary scan Test Access Port (TAP) in the FBGA package only. The TQFP package does not offer this functionality. This port operates in accordance with IEEE Standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC standard 3.3V I/O logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. Test Access Port (TAP) - Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the Most Significant Bit (MSB) on any register. Test Data Out (TDO) ry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins as shown in the TAP Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the CaptureIR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The x36 configuration has a xx-bit-long register, and the x18 configuration has a yy-bit-long register. The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and Output ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The TDO output pin is used to serially clock data-out from the registers. The e output is active depending upon the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK. TDO is connected to the Least Significant Bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. Performing a TAP Reset TAP Instruction Set A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a high-Z state. Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the Instruction Code table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. TAP Registers The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address, data or control signals into the Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitDocument #: 38-05267 Rev. *A Page 12 of 34 CY7C1380B CY7C1382B SRAM and cannot preload the Input or Output buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE / PRELOAD; rather it performs a capture of the Inputs and Output ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in the TAP controller, and therefore this device is not compliant to the 1149.1 standard. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE / PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE / PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE / PRELOAD SAMPLE / PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1 compliant. Document #: 38-05267 Rev. *A When the SAMPLE / PRELOAD instructions loaded into the instruction register and the TAP controller in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture set-up plus hold times (TCS and TCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE / PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Note that since the PRELOAD part of the command is not implemented, putting the TAP into the Update to the Update-DR state while performing a SAMPLE / PRELOAD instruction will have the same effect as the Pause-DR command. Bypass When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 13 of 34 CY7C1380B CY7C1382B TAP Controller State Diagram 1 TEST-LOGIC RESET 0 TEST-LOGIC/ IDLE 1 1 1 SELECT DR-SCAN SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-DR 0 0 0 SHIFT-DR 0 SHIFT-IR 1 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-DR 0 0 PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR 1 0 UPDATE-IR 1 0 Note: The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05267 Rev. *A Page 14 of 34 CY7C1380B CY7C1382B TAP Controller Block Diagram 0 Bypass Register Selection Circuitry 2 TDI 1 0 1 0 1 0 Selection Circuitry TDO Instruction Register 31 30 29 . . 2 Identification Register . . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range[5, 6] Parameter Description Test Conditions Min. Max. Unit VOH1 Output HIGH Voltage IOH = −4.0 mA 2.4 V VOH2 Output HIGH Voltage IOH = −100 µA VDD - 0.2 V VOL1 Output LOW Voltage IOL = 8.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 µA 0.2 V VIH Input HIGH Voltage 1.7 VDD+0.3 V VIL Input LOW Voltage −0.5 0.7 V IX Input Load Current −5 5 µA GND ≤ VI ≤ VDDQ Notes: 5. All Voltage referenced to Ground. 6. Overshoot: VIH(AC)<VDD+1.5V for t<tTCYC/2, Undershoot:VIL(AC)<0.5V for t<tTCYC/2, Power-up: VIH<2.6V and VDD<2.4V and VDDQ<1.4V for t<200 ms. Document #: 38-05267 Rev. *A Page 15 of 34 CY7C1380B CY7C1382B TAP AC Switching Characteristics Over the Operating Range[7, 8] Parameters Description Min. Max Unit 10 MHz tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency 100 ns tTH TCK Clock HIGH 40 ns tTL TCK Clock LOW 40 ns tTMSS TMS Set-up to TCK Clock Rise 10 ns tTDIS TDI Set-up to TCK Clock Rise 10 ns tCS Capture Set-up to TCK Rise 10 ns tTMSH TMS Hold after TCK Clock Rise 10 ns tTDIH TDI Hold after Clock Rise 10 ns tCH Capture Hold after Clock Rise 10 ns Set-up Times Hold Times Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock HIGH to TDO Invalid 20 0 ns ns Notes: 7. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 8. Test conditions are specified using the load in TAP AC test conditions. TR/TF = 1 ns. Document #: 38-05267 Rev. *A Page 16 of 34 CY7C1380B CY7C1382B TAP Timing and Test Conditions 1.25V 50Ω ALL INPUT PULSES TDO 3.3V Z0 =50Ω 1.50V CL =20 pF 0V GND (a) tTH tTL Test Clock TCK tTCYC tTMSS tTMSH Test Mode Select TMS tTDIS tTDIH Test Data-In TDI Test Data-Out TDO tTDOV Document #: 38-05267 Rev. *A tTDOX Page 17 of 34 CY7C1380B CY7C1382B Identification Register Definitions Instruction Field 512K x 36 1M x 18 xxxx xxxx Device Depth (27:23) 00111 01000 Defines depth of SRAM. 512K or 1M Device Width (22:18) 00100 00011 Defines with of the SRAM. x36 or x18 Cypress Device ID (17:12) xxxxx xxxxx Reserved for future use Cypress JEDEC ID (11:1) 00011100100 00011100100 1 1 Revision Number (31:28) ID Register Presence (0) Description Reserved for version number Allows unique identification of SRAM vendor Indicate the presence of an ID register Scan Register Sizes Register Name Bit Size (x18) Bit Size (x36) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary Scan 51 70 Identification Codes Instruction Code Description EXTEST 000 Captures the Input/Output ring contents. Places the boundary scan register between the TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 38-05267 Rev. *A Page 18 of 34 CY7C1380B CY7C1382B Boundary Scan Order (512K X 36) Bit # Signal Name Bump ID Signal Name Bit # Boundary Scan Order (1M X 18) Bump ID Bit # Signal Name Bump ID Signal Name Bit # Bump ID 1 A 2R 36 A 6B 1 A 2R 36 DQb 2E 2 A 3T 37 BWa 5L 2 A 2T 37 DQb 2G 3 A 4T 38 BWb 5G 3 A 3T 38 DQb 1H 4 A 5T 39 BWc 3G 4 A 5T 39 NC 5R 5 A 6R 40 BWd 3L 5 A 6R 40 DQb 2K 6 A 3B 41 A 2B 6 A 3B 41 DQb 1L 7 A 5B 42 CE 4E 7 A 5B 42 DQb 2M 8 DQa 6P 43 A 3A 8 DQa 7P 43 DQb 1N 9 DQa 7N 44 A 2A 9 DQa 6N 44 DQb 2P 10 DQa 6M 45 DQc 2D 10 DQa 6L 45 MODE 3R 11 DQa 7L 46 DQc 1E 11 DQa 7K 46 A 2C 12 DQa 6K 47 DQc 2F 12 ZZ 7T 47 A 3C 13 DQa 7P 48 DQc 1G 13 DQa 6H 48 A 5C 14 DQa 6N 49 DQc 1D 14 DQa 7G 49 A 6C 15 DQa 6L 50 DQc 1D 15 DQa 6F 50 A1 4N 16 DQa 7K 51 DQc 2E 16 DQa 7E 51 A0 4P 17 ZZ 7T 52 DQc 2G 17 DQa 6D 18 DQb 6H 53 DQc 1H 18 A 6T 19 DQb 7G 54 NC 5R 19 A 6A 20 DQb 6F 55 DQd 2K 20 A 5A 21 DQb 7E 56 DQd 1L 21 ADV 4G 22 DQb 6D 57 DQd 2M 22 ADSP 4A 23 DQb 7H 58 DQd 1N 23 ADSC 4B 24 DQb 6G 59 DQd 2P 24 OE 4F 25 DQb 6E 60 DQd 1K 25 BWE 4M 26 DQb 7D 61 DQd 2L 26 GW 4H 27 A 6A 62 DQd 2N 27 CLK 4K 28 A 5A 63 DQd 1P 28 A 6B 29 ADV 4G 64 MODE 3R 29 BWa 5L 30 ADSP 4A 65 A 2C 30 BWb 3G 31 ADSC 4B 66 A 3C 31 A 2B 32 OE 4F 67 A 5C 32 CE 4E 33 BWE 4M 68 A 6C 33 A 3A 34 GW 4H 69 A1 4N 34 A 2A 35 CLK 4K 70 A0 4P 35 DQb 1D Document #: 38-05267 Rev. *A Page 19 of 34 CY7C1380B CY7C1382B Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VDD Relative to GND ....... –0.3V to +4.6V DC Voltage Applied to Outputs in High Z State[9] ................................. –0.5V to VDDQ + 0.5V DC Input Voltage[9] ............................. –0.5V to VDDQ + 0.5V Current into Outputs (LOW) .........................................20 mA Electrical Characteristics Over the Operating Range Parameter Description Static Discharge Voltage .......................................... >1500V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA Operating Range Range Ambient Temp.[10] Com’l 0°C to +70°C Ind’l –40°C to +85°C Test Conditions VDD Power Supply Voltage VDDQ I/O Supply Voltage VOH Output HIGH Voltage VOL Output LOW Voltage VIH Input HIGH Voltage Input LOW Voltage IX Input Load Current Max. Unit 3.135 3.63 V 2.375 3.63 V VDD = Min., IOH = –1.0 mA 2.5V 2.0 V VDD = Min., IOL = 8.0 mA 3.3V VDD = Min., IOL = 1.0 mA 2.5V 0.4 V V 2.5V 1.7 V 3.3V –0.3 0.8 2.5V –0.3 0.7 V 5 µA -30 30 µA -30 30 µA 5 µA 5.0-ns cycle, 200 MHz 315 mA 6.0-ns cycle, 167 MHz 285 mA 6.7-ns cycle, 150 MHz 265 mA 7.5-ns cycle, 133 MHz 245 mA 5.0-ns cycle, 200 MHz 140 mA 6.0-ns cycle, 167MHz 120 mA 6.7-ns cycle, 150 MHz 110 mA 7.5-ns cycle, 133 MHz 105 mA All speed grades 20 mA Output Leakage Current GND < VI < VDDQ, Output Disabled IDD VDD Operating Supply VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC Max. VDD, Device Deselected, VIN < 0.3V or VIN > VDDQ – 0.3V, f = 0 V 2.0 GND < VI < VDDQ Max. VDD, Device Deselected, VIN > VIH or VIN <VIL f = fMAX = 1/tCYC 0.4 3.3 V IOZ Automatic CE Power-Down Current—CMOS Inputs Min. V Input = VSS ISB2 2.5V – 5% 3.3V + 10% 2.4 Input Current of ZZ Automatic CE Power-Down Current—TTL Inputs 3.3V –5% / +10% 3.3V Input Current of MODE ISB1 VDDQ VDD = Min., IOH = –4.0 mA [9] VIL VDD V Notes: 9. Minimum voltage equals –2.0V for pulse durations of less than 20 ns. 10. TA is the temperature. Document #: 38-05267 Rev. *A Page 20 of 34 CY7C1380B CY7C1382B Electrical Characteristics Over the Operating Range (continued) Parameter ISB3 Description Test Conditions Automatic CE Power-Down Current—CMOS Inputs ISB4 Automatic CS Power-Down Current—TTL Inputs Max. VDD, Device Deselected, or VIN ≤ 0.3V or VIN > VDDQ − 0.3V f = fMAX = 1/tCYC Max. VDD, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 Min. Max. Unit 5.0-ns cycle, 200 MHz 110 mA 6.0-ns cycle, 167 MHz 100 mA 6.7-ns cycle, 150 MHz 90 mA 7.5-ns cycle, 133 MHz 85 mA All Speeds 50 mA Capacitance[11] Parameter Description Test Conditions CIN Input Capacitance CCLK Clock Input Capacitance CI/O Input/Output Capacitance TA = 25°C, f = 1MHz, VDD = 3.3V, VDDQ = 3.3V Max. Unit 3 pF 3 pF 3 pF AC Test Loads and Waveforms[12] R=317Ω 3.3V OUTPUT ALL INPUT PULSES OUTPUT Z0 =50Ω RL =50Ω VTH = 1.5V (a) 3.0V 10% 5 pF INCLUDING JIG AND SCOPE R=351Ω 90% 10% 90% GND ≤ 1 V/ns ≤ 1 V/ns (c) (b) Thermal Resistance[11] Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Symbol TQFP Typ. Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board ΘJA 25 ΘJC 9 Notes: 11. Tested initially and after any design or process changes that may affect these parameters. 12. Input waveform should have a slew rate of 1 V/ns. Document #: 38-05267 Rev. *A Page 21 of 34 CY7C1380B CY7C1382B Switching Characteristics Over the Operating Range[13, 14, 15] -200 Parameter Description Min. Max. -167 Min. Max. -150 Min. Max. -133 Min. Max. Unit tCYC Clock Cycle Time 5.0 6.0 6.7 7.5 ns tCH Clock HIGH 1.8 2.1 2.3 2.5 ns tCL Clock LOW 1.8 2.1 2.3 2.5 ns tAS Address Set-Up Before CLK Rise 1.4 1.5 1.5 1.5 ns tAH Address Hold After CLK Rise 0.4 0.5 0.5 0.5 ns tCO Data Output Valid After CLK Rise tDOH Data Output Hold After CLK Rise tADS ADSP, ADSC Set-Up Before CLK Rise tADH ADSP, ADSC Hold After CLK Rise tWES BWE, GW, BWx Set-Up Before CLK Rise tWEH BWE, GW, BWx Hold After CLK Rise tADVS ADV Set-Up Before CLK Rise tADVH ADV Hold After CLK Rise tDS Data Input Set-Up Before CLK Rise tDH 3.0 3.8 4.2 ns 1.3 1.3 1.3 ns 1.4 1.5 1.5 1.5 ns 0.4 0.5 0.5 0.5 ns 1.4 1.5 1.5 1.5 ns 0.4 0.5 0.5 0.5 ns 1.4 1.5 1.5 1.5 ns 0.4 0.5 0.5 0.5 ns 1.4 1.5 1.5 1.5 ns Data Input Hold After CLK Rise 0.4 0.5 0.5 0.5 ns tCES Chip enable Set-Up 1.4 1.5 1.5 1.5 ns tCEH Chip enable Hold After CLK Rise 0.4 0.5 0.5 0.5 ns tCHZ tCLZ Clock to High-Z Clock to Low-Z [14] 3.0 [14] 1.3 [14, 15] tEOHZ OE HIGH to Output High-Z tEOLZ OE LOW to Output Low-Z[14, 15] tEOV 1.3 3.4 OE LOW to Output Valid [14] 3.0 1.3 4.0 0 1.3 4.0 0 3.0 3.0 1.3 4.0 0 3.4 3.0 ns 4.0 0 3.8 ns ns ns 4.2 ns Notes: 13. Unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and load capacitance. Shown in (a), (b) and (c) of AC Test Loads. 14. tCHZ, tCLZ, tOEV, tEOLZ, and tEOHZ are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 15. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ. Document #: 38-05267 Rev. *A Page 22 of 34 CY7C1380B CY7C1382B 1 Switching Waveforms Write Cycle Timing[4, 16, 17] Single Write Burst Write Pipelined Write tCH Unselected tCYC CLK tADH tADS tCL ADSP ignored with CE1 inactive ADSP tADH tADS ADSC initiated write ADSC tADVH tADVS ADV tAS ADD ADV Must Be Inactive for ADSP Write WD1 WD3 WD2 tAH GW tWS tWH BWE tCES tWH tWS tCEH CE1 masks ADSP CE1 tCES tCEH Unselected with CE2 CE2 CE3 tCES tCEH OE tDH tDS Data In High-Z 1a 1a 2a = UNDEFINED 2b 2c 2d 3a High-Z = DON’T CARE Notes: 16. WE is the combination of BWE, BWx, and GW to define a write cycle (see Write Cycle Descriptions table). 17. WDx stands for Write Data to Address X. Document #: 38-05267 Rev. *A Page 23 of 34 CY7C1380B CY7C1382B Switching Waveforms (continued) Read Cycle Timing[4, 16, 18] Single Read tCYC Burst Read Unselected tCH Pipelined Read CLK tADH tADS tCL ADSP ignored with CE1 inactive ADSP tADS ADSC initiated read ADSC tADVS tADH Suspend Burst ADV tADVH tAS ADD RD1 RD3 RD2 tAH GW tWS tWS tWH BWE tCES tCEH tWH CE1 masks ADSP CE1 Unselected with CE2 CE2 tCES tCEH CE3 tCES OE tCEH tEOV tOEHZ tDOH Data Out tCO 1a 1a 2a 2b 2c 2c 2d 3a tCLZ = DON’T CARE tCHZ = UNDEFINED Note: 18. RDx stands for Read Data from Address X. Document #: 38-05267 Rev. *A Page 24 of 34 CY7C1380B CY7C1382B Switching Waveforms (continued) Read/Write Cycle Timing[4, 16, 17, 18] Single Read tCYC Single Write Unselected Burst Read tCH Pipelined Read CLK tADH tADS tCL ADSP ignored with CE1 inactive ADSP tADS ADSC tADVS tADH ADV tAS ADD tADVH RD1 WD2 RD3 tAH GW tWS tWS tWH BWE tCES tCEH tWH CE1 masks ADSP CE1 CE2 tCES tCEH CE3 tCES tCEH tEOV OE Data In/Out tEOHZ tEOLZ tCO Document #: 38-05267 Rev. *A 1a 1a Out tDS tDH 2a In 2a Out = DON’T CARE = UNDEFINED 3a Out tDOH 3b Out 3c Out 3d Out tCHZ Page 25 of 34 CY7C1380B CY7C1382B Switching Waveforms (continued) Pipeline Timing[4, 19, 20] tCH tCYC tCL CLK tAS ADD RD1 tADS RD2 RD3 WD1 RD4 WD2 WD3 WD4 tADH ADSC initiated Reads ADSC ADSP initiated Reads ADSP ADV tCEH tCES CE1 CE tWEH tWES BWE ADSP ignored with CE1 HIGH OE tCLZ Data In/Out 1a Out 2a Out 3a Out 4a Out 1a In 2a In 3a In 4a D(C) In tCDV Back to Back Reads = DON’T CARE tDOH tCHZ = UNDEFINED Notes: 19. Device originally deselected. 20. CE is the combination of CE2 and CE3. All chip selects need to be active in order to select the device. Document #: 38-05267 Rev. *A Page 26 of 34 CY7C1380B CY7C1382B Switching Waveforms (continued) OE Switching Waveforms OE tEOV tEOHZ I/Os Three-State tEOLZ Document #: 38-05267 Rev. *A Page 27 of 34 CY7C1380B CY7C1382B Switching Waveforms (continued) ZZ Mode Timing [4, 21, 22] CLK ADSP HIGH ADSC CE1 CE2 LOW HIGH CE3 ZZ IDD tZZS IDD(active) IDDZZ tZZREC I/Os Three-state NotefjdfdhfdjfdfjdjdjdjNo Note: 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 22. I/Os are in three-state when exiting ZZ sleep mode. Document #: 38-05267 Rev. *A Page 28 of 34 CY7C1380B CY7C1382B Ordering Information Speed (MHz) Ordering Code 200 CY7C1380B-200AC 167 CY7C1380B-167AC 150 CY7C1380B-150AC 133 CY7C1380B-133AC 200 CY7C1382B-200AC 167 CY7C1382B-167AC 150 CY7C1382B-150AC 133 CY7C1382B-133AC 200 CY7C1380B-200BGC 167 CY7C1380B-167BGC 150 CY7C1380B-150BGC 133 CY7C1380B-133BGC 200 CY7C1382B-200BGC 167 CY7C1382B-167BGC 150 CY7C1382B-150BGC 133 CY7C1382B-133BGC 200 CY7C1380B-200BZC 167 CY7C1380B-167BZC 150 CY7C1380B-150BZC 133 CY7C1380B-133BZC 200 CY7C1382B-200BZC 167 CY7C1382B-167BZC 150 CY7C1382B-150BZC 133 CY7C1382B-133BZC Document #: 38-05267 Rev. *A Package Name A101 BG119 BB165A Package Type Operating Range 100-Lead Thin Quad Flat Pack Commercial 119 BGA 165 FBGA Page 29 of 34 CY7C1380B CY7C1382B Ordering Information Speed (MHz) Ordering Code 167 CY7C1380B-167AI 150 CY7C1380B-150AI 133 CY7C1380B-133AI 167 CY7C1382B-167AI 150 CY7C1382B-150AI 133 CY7C1382B-133AI 167 CY7C1380B-167BGI 150 CY7C1380B-150BGI 133 CY7C1380B-133BGI 167 CY7C1382B-167BGI 150 CY7C1382B-150BGI 133 CY7C1382B-133BGI 167 CY7C1380B-167BZI 150 CY7C1380B-150BZI 133 CY7C1380B-133BZI 167 CY7C1382B-167BZI 150 CY7C1382B-150BZI 133 CY7C1382B-133BZI Package Name A101 BG119 BB165A Package Type 100-Lead Thin Quad Flat Pack Operating Range Industrial 119 BGA 165 FBGA Shaded areas contain advance information. Pentium is a registered trademark of Intel Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05267 Rev. *A Page 30 of 34 CY7C1380B CY7C1382B Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 51-85050-A Document #: 38-05267 Rev. *A Page 31 of 34 CY7C1380B CY7C1382B Package Diagrams (continued) 165-Ball FBGA (13 x 15 x 1.2 mm) BB165A 51-85122-*B Document #: 38-05267 Rev. *A Page 32 of 34 CY7C1380B CY7C1382B Package Diagrams (continued) 119-Lead PBGA (14 x 22 x 2.4 mm) BG119 51-85115-*A Document #: 38-05267 Rev. *A Page 33 of 34 © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1380B CY7C1382B Revision History Document Title: CY7C1380B, CY7C1382B 512K x 36M/1M x 18 Pipelined SRAM Document Number: 38-05267 REV. ECN NO. Issue Date Orig. of Change ** 114166 3/18/02 DSG Change from Spec number: 38-01074 to 38-05267 *A 114817 4/10/02 DSG Converted updated version: earlier version converted in Rev. **. The following are the differences between versions: 1. Changed VOH and VOL values to reflect new char. values 2. Maximum voltage rating to 4.6V 3. Modified ESD voltage to 1500V 4. Changed tDOH to 1.3 ns 5. Changed VDD range to +10%/–5% 6. Changed the IDD and ISB values to reflect new char values 7. Added 165 fBGA packaging 8. Added I-temp 9. Changed set-up time from 2.0 ns to 1.5 ns 10.Changed leakage current from mA to µA 11. Changed tEOHZ from 3.0 ns to 4.0 ns 12. Added Thermal Resistance Table 13. Preliminary to Final Document #: 38-05267 Rev. *A DESCRIPTION OF CHANGE Page 34 of 34