Fairchild FMS7G10US60 Compact & complex module Datasheet

FMS7G10US60
Compact & Complex Module
Features
Description
• Short Circuit Rated 10µs @ TC = 100°C, VGE = 15V
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 10A
• High Input Impedance
• Built in Brake & 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
Applications
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
4
5
21
22
25
23
20
17
19
16
18
14
13
24
8
1
15
10
9
7
3
2
6
11
Package Code : 25PM-AA
©2005 Fairchild Semiconductor Corporation
FMS7G10US60 Rev. B1
NTC
12
Internal Circuit Diagram
1
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FMS7G10US60 Compact & Complex Module
August 2005
TC = 25°C unless otherwise noted
Symbol
Inverter
&
Brake
Converter
Common
Description
FMS7G10US60
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
@ TC = 25°C
66
W
TSC
Short Circuit Withstand Time
@ TC = 100°C
10
µs
@ TC = 80°C
@ TC = 80°C
10
A
20
A
10
A
20
A
VRRM
Repetitive Peak Reverse Voltage
1600
V
IO
Average Output Rectified Current
10
A
IFSM
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
100
A
I2t
Energy pulse @ 1Cycle at 60Hz
42
A2s
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
@ AC 1minute
2500
V
Mounting part Screw
@ M4
2.0
N·m
Mounting Torque
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FMS7G10US60
FMS7G10US60
25PM-AA
--
--
--
(2) TMC2 Relibility test was done under -45°C ~ 125°C
FMS7G10US60 Rev. B1
2
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FMS7G10US60 Compact & Complex Module
Absolute Maximum Ratings
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
600
--
--
V
∆BVCES/
∆TJ
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
µA
IGES
Gate - Emitter Leakage Current
VGE = VGES, VCE = 0V
--
--
± 100
nA
5.0
6.5
8.5
V
--
2.1
2.7
V
--
710
--
pF
On Characteristics
VGE(th)
Gate - Emitter Threshold Voltage
IC = 10mA, VCE = VGE
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 15V
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
57
--
pF
--
12
--
pF
--
65
130
ns
--
65
130
ns
--
80
160
ns
--
100
200
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
--
0.15
--
mJ
Eoff
Turn-Off Switching Loss
--
0.2
--
mJ
td(on)
Turn-On Delay Time
--
70
140
ns
tr
Rise Time
--
60
120
ns
td(off)
Turn-Off Delay Time
--
90
180
ns
tf
Fall Time
--
200
350
ns
Eon
Turn-On Switching Loss
--
0.16
--
mJ
Eoff
Turn-Off Switching Loss
--
0.3
--
mJ
Tsc
Short Circuit Withstand Time
VCC = 300 V, VGE = 15V
@ TC = 100°C
10
--
--
µs
VCE = 300 V, IC = 10A,
VGE = 15V
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
FMS7G10US60 Rev. B1
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 10A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125°C
3
--
35
50
nC
--
8
15
nC
--
12
20
nC
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FMS7G10US60 Compact & Complex Module
Electrical Characteristics of IGBT @ Inverter
Symbol
VFM
trr
Irr
Qrr
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Diode Forward Voltage
IF = 10A
Diode Reverse Recovery Time
IF = 10A
di / dt = 20 A/µs
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Min.
Typ.
Max.
Units
V
TC = 25°C
--
1.9
2.8
TC = 100°C
--
2.0
--
TC = 25°C
--
85
150
TC = 100°C
--
110
--
TC = 25°C
--
0.7
1.4
TC = 100°C
--
1.0
--
TC = 25°C
--
30
105
TC = 100°C
--
55
--
ns
A
nC
Electrical Characteristics of DIODE @ Converter TC = 25°C unless otherwise noted
Min.
Typ.
Max.
Units
VFM
Symbol
Diode Forward Voltage
Parameter
IF = 10A
Test Conditions
TC = 25°C
--
1.1
1.5
V
TC = 100°C
--
1.0
--
IRRM
Repetitive Reverse Current
VR = VRRM
TC = 25°C
--
--
8
TC = 100°C
--
5
--
mA
Thermal Characteristics
Symbol
Inverter
Brake
Converter
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case (IGBT Part, per 1/6 Module)
--
1.9
°C/W
RθJC
Junction-to-Case (DIODE Part, per 1/6 Module)
--
2.9
°C/W
RθJC
Junction-to-Case (IGBT Part)
--
1.9
°C/W
RθJC
Junction-to-Case (DIODE Part)
--
2.9
°C/W
Junction-to-Case (DIODE Part, per 1/6 Module)
--
2.5
°C/W
Weight of Module
60
--
g
RθJC
Weight
NTC Thermistor Characteristics
Symbol
Thermistor
Tol.
Typ.
Units
R25
Rated Resistance @ Tc = 25°C
+/- 5 %
4.7
KΩ
B(25/100)
B - Value
+/- 3 %
3530
FMS7G10US60 Rev. B1
Parameter
4
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FMS7G10US60 Compact & Complex Module
Electrical Characteristics of DIODE @ Inverter
FMS7G10US60 Compact & Complex Module
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
0
3
V
5
1
V
0
2
0
4
o
5
2
V
2
1
5
3
Common Emitter
TC = 25 C
5
2
0
2
0
2
5
1
V
0
1
=
V
5
1
E
G
0
1
0
1
5
5
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
0
3
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15 V
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
]
0 V
1 [
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
1 o
t
c
e
l
l
o
C
8
E
C
E
C
]
V
[
6 V
,
e
g
a
t
l
o
V
r
4 e
t
t
i
m
E
r
o
t
2 c
e
l
l
o
C
0
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Transient Thermal Impedance
0
.
4
10
T
B
G
I
5
.
2
A
0
1
0
.
2
A
5
=
IC
0.1
e
s
l
u
P
e
l
g
n
i
S
5
.
1
)
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
(
0
5
1
0
0
1
0
5
0
0
5
0.
1
]
C
o
[
C
T
,
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
10
-5
-4
10
10
-3
-2
10
10
-1
10
0
1
10
Rectangular Pulse Duration [sec]
Figure 6. Saturation Voltage vs. VGE
0
2
0
2
]
V
[
]
V
[
8
8
A
0
2
A
0
1
4
A
0
2
A
5
=
IC
A
0
1
A
5
=
IC
4
0
0
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
0
2
]
6 V
1 [
V
,
e
2 g
1 a
t
l
o
V
r
e
t
t
8 i
m
E
e
G
t
4 a
0
E
G
E
G
FMS7G10US60 Rev. B1
Common Emitter
TC = 125℃
2
1
2
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
6
1
Common Emitter
TC = 25℃
6
1
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
1
0.01
Figure 5. Saturation Voltage vs. VGE
)
t
a
s
(
E
C
D
R
F
A
0
2
Thermal Response, Zthjc [℃/W]
Common Emitter
VGE = 15 V
0
.
3
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
5
.
3
]
V
[
5
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(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
0
0
0
1
0
0
6
1
s
e
i
C
0
0
4
1
0
0
2
1
TC = 25 C
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
o
n
o
T
s
e
r
C
0
0
8
0
0
6
r
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
s
e
o
C
0
0
0
1
0
0
4
]
F
p
[
e
c
n
a
t
i
c
a
p
a
C
Common Emitter
VGE = 0 V, f = 1 MHz
0
0
2
0
0
4
1
[
0
2
1 ]
c
n
a
0 R
0 ,
1 e
G
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
f
f
o
E
n
o
E
f
f
o
E
f
T
0
0
1
f
T
0
0
1
0
4
1
[
0
2
1 ]
c
n
a
0 R
0 ,
1 e
e
R
0 t
8 s
i
s
a
G
0 e
6 t
0
4
0
2
0
4
1
0
2
1
0
0
1
0
8
[
G
R
,
e
c
n
a
t
s
i
s
e
R
G
e
0 t
6 a
0
4
0
2
G
Ω]
Ω
Figure 12. Turn-Off Characteristics vs.
Collector Current
0
0
0
1
0
0
0
1
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
f f
f
T
o
T
f
f
o
T
r
T
f
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
n
o
T
0
0
1
0
2
6
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
0 c
1 e
l
l
5
0
2
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
c
0 e
1 l
l
5
FMS7G10US60 Rev. B1
e
R
0
0
0
1
f
f
o
T
]
J
u
[
s
s
o
l
g
n
i
h
c
t
i
w
S
Figure 11. Turn-On Characteristics vs.
Collector Current
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0 t
8 s
i
s
C
a
G
]
V
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 300 V, VGE = ± 15 V
IC = 10 A
TC = 25℃ ℃℃
TC = 125℃ ------
0
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0 e
6 t
0
4
0
2
0 [
1
E
V
,
e
g
a
t
l
o
V
r
e
t
t
i
1 m
E
r
o
t
c
e
l
l
o
C
1
.
0
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Ω
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FMS7G10US60 Compact & Complex Module
Typical Performance Characteristics
FMS7G10US60 Compact & Complex Module
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
5
1
V
0
0
3
C
C
o
TC = 25 C
E
G
V
0
0
2
n
o
E
6
f
f
o
E
3
0
0
1
0
0
4
5
3
C
n
0
3 ]
Q
,
5 [
2
g
a
h
e
0 g
2 r
t
a
5 C
1 e
0 G
1
5
0
0
2
]
A
[
5
1 IC
,
t
n
e
r
r
u
C
r
o
t
o
C
c
0 e
1 l
l
5
Figure 15. SOA Characteristics
Figure 16. RBSOA Characteristics
0
0
1
50
IC MAX. (Pulsed)
[A]
50us
IC MAX. (Continuous)
100us
C
10
C
0
1
]
A
[
1
.
0
Collector Current, I
1ms
1
I
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
RL = 30 Ω
9
f
f
o
E
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
e
t
a
G
V
0
0
1
=
V
]
V
[
2
1
0
0
0
1
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15 V, RG = 20Ω
TC = 25℃ ℃℃
TC = 125℃ ------
DC Operation
1
0
.
0
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
1
0
0
0
1
0
0
1
0
1
1
1
.
0
0.1
Single Nonrepetitive
Pulse TJ ≤ 125℃
VGE = 15V
RG = 20 Ω
0
100
500
600
700
]
V
[
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
E
C
Figure 18. Reverse Recovery Characteristics
30
Peak Reverse Recovery Current, I rr [A]
Reverse Recovery Time, T rr [x10ns]
Common Cathode
VGE = 0V
T C = 25℃
T C = 125℃
35
[A]
400
20
40
F
300
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Forward Current, I
200
25
20
15
10
5
0
0
1
2
3
T rr
1
Irr
Common Cathode
di/dt = 20A/㎲
T C = 25℃
T C = 100℃ ---------
0.1
2
4
4
6
8
10
12
Forward Current, IF [A]
Forward Voltage, VF [V]
FMS7G10US60 Rev. B1
10
7
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(Continued)
Figure 19. Rectifier (Converter) Characteristics
Figure 20. Rectifier (Converter) Characteristics
0
0
1
0
0
0
1
0
0
1
C
o
5
2
1
=
C
T
C
o
5
2
1
=
C
T
0
1
C
o
5
2
1
1
C
o
5
2
1
.
0
1
0
.
0
]
A
u
[
IR
,
t
n
e
r
r
u
C
e
s
r
e
v
e
R
0
1
4
.
1
2
.
1
0
.
1
8
.
0
]
V
[
VF
,
e
g
a
t
l
o
V
s
u
o
e
n
a
t
n
a
t
6 s
.
n
0
I
0
0
6
1
0
0
2
1
0
0
8
]
V
[
VR
,
e
g
a
t
l
o
V
e
s
r
e
v
0 e
0 R
4
0
4
.
0
3
E
1
1
.
0
]
A
[
IF
,
t
n
e
r
r
u
C
d
r
a
w
r
o
F
s
u
o
e
n
a
t
n
a
t
s
n
I
Figure 21. NTC Characteristics
6
1
2
1
Ω
]
K
[
R
,
e
c
n
a
t
s
i
s
e
R
8
4
0
5
2
1
0
0
1
]
C
o
[
5
7 T
,
e
r
u
t
a
r
0 e
5 p
m
e
T
5
2
0
FMS7G10US60 Rev. B1
8
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FMS7G10US60 Compact & Complex Module
Typical Performance Characteristics
FMS7G10US60 Compact & Complex Module
Mechanical Dimensions
25PM-AA
-. Pin Coordinate
Name Plate
82.2 ±0.20
+0.20
x
y
1
0.0
0.0
2
-3.0
0.0
3
-6.0
0.0
4
-13.0
0.0
5
-18.0
0.0
6
-25.0
0.0
7
-29.0
0.0
8
-32.0
0.0
71.0 -0.10
4- Ø6.0
4- Ø2.0
Coordinate
Pin
#No
±0.10 Dp
57.0 ±0.20
6.0
+0.20
22
17.5 ±0.20
1
4.3±0.20
23.0±0.15
21.0 ±0.20
3.2 -0.10
+0.20
11.2 -0.10
+0.20
Ø1.0 ±0.05
+0.20
+0.20
5.1 -0.10
4.3±0.20
+0.20
16.7 -0.10
14.0±0.15
12
16.3 -0.10
+0.20
30.8 -0.10
37.9 ±0.20
15
2- Ø4.3 -0.00
Mounting-Hole
9
-35.0
0.0
10
-38.0
0.0
11
-46.5
0.0
12
-49.5
0.0
13
-49.5
11.5
14
-49.5
20.0
15
-49.5
28.0
16
-32.0
28.0
17
-29.0
28.0
18
-23.0
28.0
19
-20.0
28.0
20
-14.0
28.0
21
-11.0
28.0
22
3.5
28.0
23
3.5
20.0
24
3.5
11.5
25
3.5
5.5
* datum pin : #1
* Pin Tilt : ±0.15
Dimensions in Millimeters
FMS7G10US60 Rev. B1
9
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Advance Information
Formative or In
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Rev. I16
10
FMS7G10US60 Rev. B1
www.fairchildsemi.com
FMS7G10US60 Compact & Complex Module
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