CYSTEKEC MTE030N10RV8-0-T6-G N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE030N10RV8
BVDSS
ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
RDSON(TYP) VGS=10V, ID=20A
Features
100V
16.5A
5.7A
29.4mΩ
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3×3
MTE030N10RV8
Pin 1
G:Gate
D:Drain S:Source
Ordering Information
Device
MTE030N10RV8-0-T6-G
Package
Shipping
DFN3×3
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE030N10RV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
100
±20
16.5
10.4
5.7
4.6
66 *1
36
128
21
8.4
2.5 *2
1.6 *2
-55~+150
Unit
Value
6
50 *2
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice RθJA will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
MTE030N10RV8
Min.
Typ.
Max.
100
2
-
7.3
29.4
4
±100
1
5
38
-
954
98
20
14.8
4.3
2.9
22
-
Unit
Test Conditions
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
VGS=±20V, VDS=0V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=20A
pF
VDS=50V, VGS=0V, f=1MHz
nC
VDS=50V, VGS=10V, ID=5.5A
V
S
nA
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
VSD *1
trr
Qrr
Min.
-
Typ.
12.6
15.8
25
5.8
1.3
Max.
19
24
38
9
-
Unit
-
0.73
24.8
26.3
16.5
1
-
A
Test Conditions
ns
VDS=50V, ID=4.4A, VGS=10V,
RGS=1Ω
Ω
f=1MHz
V
ns
nC
IS=1A, VGS=0V
IF=4.4A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
Recommended Soldering Footprint
unit : mm
MTE030N10RV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
50
ID, Drain Current(A)
40
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V
6V
30
5V
20
4.5V
10
VGS=4V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=4.5V
VGS=7V
10V
100
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.1
1
10
ID, Drain Current(A)
0
100
4
6
8 10 12 14 16
IDR , Reverse Drain Current(A)
18
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
150
ID=20A
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
2
120
90
60
30
2
VGS=10V, ID=20A
RDSON@Tj=25°C : 29.4mΩ typ.
1.6
1.2
0.8
0.4
0
0
0
MTE030N10RV8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
10
Crss
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
1
0
10
20
30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
-75 -50 -25
90 100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=5V
VDS=50V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001
8
VDS=20V
6
VDS=80V
4
2
ID=5.5A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
100
9
ID, Maximum Drain Current(A)
RDS(ON)
Limited
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
100μs
1
1ms
10ms
100ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA =50°C/W, Single Pulse
1s
DC
MTE030N10RV8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
7
6
5
4
3
2
TA=25°C, VGS=10V, RθJA =50°C/W
Single Pulse
1
0
0.01
0.01
8
1000
25
50
75
100
125
150
Tj, Junctione Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
300
VDS=10V
TJ(MAX) =150°C
TA=25°C
RθJA =50°C/W
250
Power (W)
40
ID, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
30
20
200
150
100
10
50
0
0
1
2
3
4
5
6
7
8
9
10
0
0.0001
VGS, Gate-Source Voltage(V)
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE030N10RV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTE030N10RV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTE030N10RV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C053V8
Issued Date : 2017.09.11
Revised Date :
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
D D
E030
N10R
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
Min.
Max.
0.70
0.80
0.25
0.35
0.10
0.25
3.25
3.45
3.00
3.20
1.48
1.68
0.13 TYP
3.20
3.40
DIM
A
b
c
D
D1
D2
D3
E
Inches
Min.
Max.
0.028
0.031
0.010
0.014
0.004
0.010
0.128
0.136
0.118
0.126
0.058
0.066
0.005 TYP
0.126
0.134
DIM
E1
E2
e
H
L
L1
θ
M
Millimeters
Min.
Max.
3.00
3.20
2.39
2.59
0.65 BSC
0.30
0.50
0.30
0.50
0.13 TYP
8°
12°
0.15
Inches
Min.
Max.
0.118
0.126
0.094
0.102
0.026 BSC
0.012
0.020
0.012
0.020
0.005 TYP
8°
12°
0.006
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE030N10RV8
CYStek Product Specification
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