Central CMPT5179 Npn silicon rf transistor Datasheet

Central
CMPT5179
TM
Semiconductor Corp.
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5179 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise, high frequency
amplifier and high output oscillator
applications.
Marking code is C7H.
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
ΘJA
UNITS
V
V
V
mA
mW
20
12
2.5
50
350
oC
oC/W
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
Ccb
hfe
Gpe
NF
TEST CONDITIONS
MIN
VCB=15V
IC=10µA
20
IC=3.0mA
12
IE=10µA
2.5
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=1.0V, IC=3.0mA
25
VCE=6.0V, IC=5.0mA, f=100MHz
900
VCB=10V, IE=0, f=0.1 to 1.0MHz
VCE=6.0V, IC=2.0, f=1.0kHz
25
VCE=6.0V, IC=5.0mA, f=200MHz
15
VCE=6.0V, IC=1.5mA, RS=50Ω, f=200MHz
182
TYP
MAX
20
0.4
1.0
UNITS
nA
V
V
V
V
V
1.0
MHz
pF
4.5
dB
dB
1450
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
183
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