NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. http://onsemi.com MOSFET 6.0 AMPERES 30 VOLTS 24 mW @ VGS = 10 V (Typ) Features SCHOTTKY DIODE 6.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A • Pb−Free Packages are Available Applications • • • • • • • Buck Converter Buck−Boost Synchronous Rectification Low Voltage Motor Control Battery Packs Chargers Cell Phones A A 7 C C D 3 G D 4 5 (TOP VIEW) MARKING DIAGRAM & PIN ASSIGNMENT (TJ = 25°C unless otherwise noted) (Note 1) Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS "20 Vdc ID IDM 6.0 30 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) EAS 325 mJ Drain Current − (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) 8 2 6 S MOSFET MAXIMUM RATINGS Rating 1 8 8 C D D E6N3x AYWW G G 1 SO−8 CASE 751 STYLE 18 E6N3 x A Y WW G C 1 A A S G = Device Code = Blank or S = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. ORDERING INFORMATION Device NTMSD6N303R2 Package Shipping† SO−8 2500/Tape & Reel NTMSD6N303R2G SO−8 2500/Tape & Reel (Pb−Free) NTMSD6N303R2SG SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMSD6N303R2/D NTMSD6N303R2 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 30 Volts Average Forward Current (Note 3) (Rated VR) TA = 104°C IO 2.0 Amps Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108°C Ifrm 4.0 Amps Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half−wave, single phase, 60 Hz) Ifsm 30 Amps Thermal Resistance − Junction−to−Ambient (Note 4) − MOSFET RqJA 167 °C/W Thermal Resistance − Junction−to−Ambient (Note 5) − MOSFET RqJA 97 Thermal Resistance − Junction−to−Ambient (Note 3) − MOSFET RqJA 62.5 Thermal Resistance − Junction−to−Ambient (Note 4) − Schottky RqJA 197 Thermal Resistance − Junction−to−Ambient (Note 5) − Schottky RqJA 97 Thermal Resistance − Junction−to−Ambient (Note 3) − Schottky RqJA 62.5 TJ, Tstg −55 to +150 Rating THERMAL CHARACTERISTICS − SCHOTTKY AND MOSFET Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Symbol VF Maximum Instantaneous Forward Voltage (Note 6) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (Note 6) VR = 30 V Maximum Voltage Rate of Change VR = 30 V 6. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 IR dV/dt Value Unit TJ = 25°C TJ = 125°C 0.28 0.42 0.50 0.13 0.33 0.45 TJ = 25°C TJ = 125°C 250 − − 25 10,000 Volts mA mA V/ms NTMSD6N303R2 MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 30 − − 30 − − − − − − 1.0 20 − − 100 1.0 − 1.8 4.6 2.5 − − − 0.024 0.030 0.032 0.040 − 10 − Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 7) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS Vdc mV/°C W Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Ciss − 680 950 Coss − 210 300 Crss − 70 135 td(on) − 9 18 tr − 22 40 td(off) − 45 80 tf − 45 80 td(on) − 13 30 tr − 27 50 td(off) − 22 40 pF SWITCHING CHARACTERISTICS (Notes 7 & 8) Turn−On Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 10 V, RG = 6 W) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 4.5 V, RG = 6 W) Rise Time Turn−Off Delay Time Fall Time Gate Charge (VDS = 15 Vdc, VGS = 10 Vdc, ID = 5 A) ns ns tf − 34 70 QT − 19 30 Q1 − 2.4 − Q2 − 5.0 − Q3 − 4.3 − VSD − − 0.75 0.62 1.0 − Vdc trr − 26 − ns ta − 11 − tb − 15 − QRR − 0.015 − nC BODY−DRAIN DIODE RATINGS (Note 7) Diode Forward On−Voltage (IS = 1.7 Adc, VGS = 0 V) (IS = 1.7 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 5 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = 5 A, dIS/dt = 100 A/ms, VGS = 0 V) 7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 mC NTMSD6N303R2 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 12 TJ = 25°C 3.6 V 4V 3.8 V ID, DRAIN CURRENT (AMPS) 10 3.2 V 8 6 3V 4 2.8 V 2 VGS = 2.6 V 0 0.2 0.05 0.4 0.6 0.8 1 1.2 1.4 2 1.8 1.6 2 TJ = 125°C TJ = −55°C 0 1 2 4 3 5 Figure 2. Transfer Characteristics T = 125°C 0.03 0.025 T = 25°C 0.02 T = −55°C 0.015 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 4 Figure 1. On−Region Characteristics 0.035 1 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.04 0.01 8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS = 10 0.045 VDS ≥ 10 V 10 0 2 3 4 5 6 7 8 9 10 11 12 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.4 V 10 V 6V 0.05 TJ = 25°C 0.045 0.04 0.035 VGS = 4.5 V 0.03 0.025 0.02 VGS = 10 V 0.015 0.01 1 2 4 3 5 7 6 8 9 10 11 12 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 10,000 1.8 1.6 VGS = 0 V ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (AMPS) 12 1.4 1.2 1 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 10 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 30 1400 C, CAPACITANCE (pF) 10 Ciss TJ = 25°C 1200 1000 Crss 800 Ciss 600 400 Coss 200 Crss 0 VDS = 0 V 10 5 VGS = 0 V 0 5 10 15 20 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 25 8 VGS 6 Q1 4 10 Q3 4 td(off) tf 10 td(on) 1 10 14 16 18 20 0 2 1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1.0 0.7 0.8 0.9 Figure 10. Diode Forward Voltage versus Current Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 1.0 ms 10 10 s max. 10 ms VGS = 12 V SINGLE PULSE TC = 25°C 0.6 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) 12 3 0 100 100 0.1 10 4 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.01 8 VGS = 0 V TJ = 25°C 5 RG, GATE RESISTANCE (W) 0.1 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge IS, SOURCE CURRENT (AMPS) t, TIME (ns) 2 0 Qg, TOTAL GATE CHARGE (nC) tr 1 ID = 6 A TJ = 25°C 6 VDD = 15 V ID = 6 A VGS = 10 V 100 1 Q2 2 0 20 VDS Figure 7. Capacitance Variation 1000 30 QT VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1600 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTMSD6N303R2 325 300 275 250 225 200 175 150 125 100 75 50 25 0 ID = 6 A 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMSD6N303R2 TYPICAL FET ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.01 CHIP JUNCTION 0.01 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F SINGLE PULSE 0.001 0.00001 0.0001 AMBIENT 0.001 0.01 0.1 t, TIME (s) 1.0 100 10 1000 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 10 85°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 25°C −40 °C TJ = 125°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 25°C 1.0 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 0.8 NTMSD6N303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 0.1 TJ = 125°C 0.01 85°C 0.001 0.0001 25°C 0.1 TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.00001 0.000001 0.000001 0 5.0 10 15 20 25 30 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 15 25 20 dc 4.5 FREQ = 20 kHz 4.0 3.5 SQUARE WAVE 3.0 Ipk/Io = p 2.5 Ipk/Io = 5.0 2.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 30 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 19. Typical Capacitance Figure 20. Current Derating 1.75 dc 1.50 SQUARE WAVE Ipk/Io = p 1.25 Ipk/Io = 5.0 1.00 Ipk/Io = 10 0.75 Ipk/Io = 20 0.50 0.25 0 0 30 5.0 VR, REVERSE VOLTAGE (VOLTS) PFO , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 100 10 25 Figure 18. Maximum Reverse Current 1000 5.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 0 15 10 1.0 2.0 3.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation http://onsemi.com 7 5.0 140 160 NTMSD6N303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.1010 W CHIP JUNCTION 39.422 mF 0.01 0.01 1.2674 W 27.987 W 30.936 W 36.930 W 493.26 mF 0.0131 F 0.2292 F 2.267 F SINGLE PULSE 0.001 1.0E−05 1.0E−04 AMBIENT 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin CO − Vout LOAD − Buck Regulator LO + + Vin CO − Vout − Synchronous Buck Regulator http://onsemi.com 8 LOAD 1.0E+03 NTMSD6N303R2 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + + Vin CO Vout LOAD Q1 − − Boost Regulator + + Vin CO − Vout LOAD − Buck−Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 Q2 LO D2 BATT #1 + Vin D1 CO − Q3 D3 BATT #2 http://onsemi.com 9 NTMSD6N303R2 TYPICAL APPLICATIONS Li−Ion BATTERY PACK APPLICATIONS Battery Pack PACK + Li−Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK − SCHOTTKY SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. • Under normal operation, both transistors are on. http://onsemi.com 10 NTMSD6N303R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) Y M M 4 −Y− K MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE G C N X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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