SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS D1FL20U Case : 1F Unit : mm 200V 1.1A FEATURES ● Small SMT ● Low noise ● trr35ns APPLICATION ● Switching power supply ● DC/DC converter ● Free Wheel ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25℃ On alumina substrate IO 50Hz sine wave, R-load, Ta=25℃ Peak Surge Forward Current IFSM On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=1.1A, Pulse measurement Reverse Current IR VR =VRM, Pulse measurement Reverse Recovery Time trr IF=0.5A, IR=1A θjl junction to lead Thermal Resistance θja junction to ambient, On alumina substrate junction to ambient, Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd On glass-epoxy substrate Ratings -55〜150 150 200 1.1 0.84 20 Unit ℃ ℃ V A Ratings Max.0.98 Max.10 Max.35 Max.23 Max.108 Max.157 Unit V μA ns A ℃/W D1FL20U Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.4 0.8 1.2 1.6 2 Forward Voltage VF [V] 2.4 2.8 D1FL20U Forward Power Dissipation 1.6 D=0.8 DC Forward Power Dissipation PF [W] 1.4 SIN 1.2 0.5 0.3 0.2 1 0.1 0.05 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T D1FL20U Derating Curve Average Rectified Forward Current IO [A] 2 DC Alumina substrate Soldering land 2mmφ Conductor layer 20µm Substrate thickness 0.64mm D=0.8 1.5 0.5 SIN 1 0.3 0.2 0.1 0.5 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = VRM IO 0 0 VR tp D=tp /T T D1FL20U Derating Curve Average Rectified Forward Current IO [A] 1.6 1.4 DC 1.2 1 Glass-epoxy substrate Soldering land 2mmφ Conductor layer 35µm D=0.8 0.5 SIN 0.8 0.3 0.2 0.6 0.1 0.4 0.05 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = VRM IO 0 0 VR tp D=tp /T T D1FL20U Peak Surge Forward Capability IFSM 35 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 30 non-repetitive, sine wave, Tj=25°C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 Junction Capacitance Cj [pF] 10 100 1 100 Junction Capacitance Reverse Voltage VR [V] 10 D1FL20U f=1MHz Tl=25°C TYP per diode