AH202 1W High Linearity Amplifier Product Features Product Description 30 – 2200 MHz Functional Diagram The AH202 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package. This device provides its optimum P1dB and OIP3 performance when biased at + 11 V; It can also be biased as low as +9 V for lower power applications. 17 dB Gain @ 900 MHz +30 dBm P1dB +47 dBm Output IP3 28 Lead-free/RoHS-compliant 6x6mm QFN SMT package Applications Mobile Infrastructure CATV / DBS Optimal for VHF / UHF broadband applications Defense / Homeland Security The backside metalization provides excellent thermal dissipation while allowing visible evidence of solder reflow across the bottom of the package on a SMT board. Superior thermal design allows the product an MTTF of over 100 years at a mounting temperature of +85º C. All devices are 100% RF & DC tested. Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power (3) @ -45dBc ACPR Operating Current Range Supply Voltage 24 25 23 22 21 2 20 19 RF OUT 4 18 5 17 6 16 N/C 7 15 8 9 10 12 11 Function Input No Connect Output/Bias No Connect or Ground The product is targeted for use as a driver amplifier for wireless infrastructure or CATV applications where high linearity and medium power is required. 13 14 Pin No. 3 7 19 All other pins Backside Paddle Ground Specifications (1) Parameters 26 RF IN 3 Single Positive Supply Internally Matched 27 1 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB 30 14 +29 +45 Typ Max Parameters 2200 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure IS-95 Channel Power 800 17 20 18 +30 +47 2.5 dBm +24 mA V 330 +11 WCDMA Channel Power 390 Parameter Rating Storage Temperature DC Voltage RF Input Power (continuous) Thermal Resistance, Rth Maximum Junction Temperature -55 to +125 C +13 V +16 dBm 18 C/W +160 C Operation of this device above any of these parameters may cause permanent damage. Typical 900 17 20 18 +30 +47 2.8 1900 15 17 10 +29.7 +46 3.8 2140 15 8 13 +29.4 +45.5 4.8 dBm +24 +23 - dBm - - (3) @ -45dBc ACPR 1. Test conditions unless otherwise noted: 25ºC, Vdd = 11 V in a 50-Ω unmatched fixture. 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, ±885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz. Absolute Maximum Rating Units MHz dB dB dB dBm dBm dB (5) @ -45dBc ACLR Supply Bias +20.5 +11 V @ 330 mA 4. Data reflects performance of a typical AH202 in an application circuit including associated circuit board and passive component losses. 5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, ±5 MHz offset, Integrated Channel BW = 3.84 MHz. Ordering Information Part No. Description AH202-F 1W High Linearity Amplifier AH202-PCB900 AH202-PCB1900 AH202-PCB2140 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board (lead-free/RoHS-compliant 6x6mm QFN package) Standard tape / reel size = 500 pieces on a 7” reel Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 1 of 7 August 2009 AH202 1W High Linearity Amplifier Typical Device Data S-parameters (VDS = +11V, IDS = 330mA, unmatched device in a 50 Ω system). Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads. Return Losses Gain 0 20 19 -5 18 S11 -10 16 (dB) S21 (dB) 17 15 S22 -15 14 -20 13 12 -25 11 -30 10 0 0.5 1 1.5 Frequency (GHz) 2 0 2.5 S-Parameters (VDS = +11.0V, IDS = 330mA, T = +25 C, unmatched device in a 50 0.5 1 1.5 Frequency (GHz) 2 2.5 system) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -17.78 -18.60 -17.34 -14.70 -11.92 -10.29 -9.20 -8.23 -7.74 -7.43 -7.73 -8.76 -10.40 -10.57 -6.72 -3.60 -1.91 -137.86 -153.83 -150.80 -149.17 -159.61 -171.08 174.71 160.52 145.06 127.89 108.79 84.28 43.69 -24.74 -90.87 -136.82 -167.99 18.26 18.06 18.03 17.87 17.43 16.93 16.36 15.90 15.43 15.04 14.82 14.72 14.59 14.42 13.29 10.89 7.61 169.32 166.20 156.86 135.75 115.76 96.20 77.49 58.22 40.52 23.04 4.23 -15.48 -38.77 -65.43 -97.06 -128.44 -154.46 -21.43 -21.34 -21.46 -21.84 -22.34 -22.96 -23.72 -24.54 -25.32 -26.07 -26.69 -26.94 -26.60 -25.80 -25.02 -24.82 -25.13 1.41 -4.54 -12.16 -25.03 -37.49 -48.84 -61.29 -73.36 -85.56 -99.09 -115.15 -132.95 -155.57 176.52 143.13 111.82 87.68 -15.33 -15.51 -16.27 -18.57 -21.38 -26.07 -21.37 -16.16 -12.76 -10.27 -8.39 -7.17 -6.37 -6.14 -6.69 -7.11 -6.73 -170.64 177.37 161.24 135.96 93.89 25.81 -47.34 -78.06 -98.55 -114.42 -129.46 -144.14 -158.61 -172.06 176.96 173.14 174.58 Application Circuit PC Board Layout Circuit Board Material: .014” Getek ( r=4.2), four layer, 1 oz copper. Microstrip line details: width = .029”, spacing = .036”, total thickness = .062” Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 2 of 7 August 2009 AH202 1W High Linearity Amplifier Reference Design: 50-800 MHz The AH202 is suitable for applications between 50 – 800 MHz without any requirements for input or output matching. Only bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900 evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device. Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1 dB Output IP3 MHz 50 200 400 600 800 dB 18.1 17.9 17.6 17.1 16.6 dB -12.6 -17.6 -15.5 -12.9 -10.7 dB -14.8 -17.4 -20.2 -25.9 -21.0 dBm 29.9 30.0 30.1 30.1 30.0 dBm (+10 dBm / tone, 10 MHz spacing) Supply Bias 41.5 47.9 dB 47.1 46.1 45.8 +11 V @ 330 mA + 11V CAP ID=C5 C=1e5 pF CAP ID=C4 (0805) C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=1000 pF IND ID=L1 L=470 nH RES ID=L2 R=0 Ohm SUBCKT ID=S1 NET="AH202_F" PORT P=2 Z=50 Ohm CAP ID=C2 C=1000 pF -5 18 -10 16 -15 14 -20 12 -25 10 Magnitude S11, S22 (dB) Magnitude S21 (dB) Measured S - Parameters 20 -30 0.04 0.24 DB(|S(1,1)|) (R) AH202 50_800MHz 0.44 Frequency (GHz) DB(|S(2,1)|) (L) AH202 50_800MHz 0.64 0.8 DB(|S(2,2)|) (R) AH202 50_800MHz Notes: R=0 Ω (at designator L2) is used as a place holder for a different application circuit. It can be removed from the circuit without any effect to the performance. The microstrip line is weakly co-planar. Ground planes around it are not necessary for operation of the AH202. Adequate heat sinking is required for the device. Further mounting instructions are shown in the AH202 datasheet. The RF choke should be a wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series is recommended (part #1008CS-471X_B_). Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 3 of 7 August 2009 AH202 1W High Linearity Amplifier Application Circuit: 900 MHz (AH202-PCB900) Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power 900 MHz 17 dB - 20 dB - 18 dB + 30 dBm + 47 dBm Noise Figure Supply Voltage Supply Current CAP ID=C1 C=100 pF IND ID=L2 L=3.3 nH 2.8 dB +11 V 330 mA SUBCKT ID=S1 NET="AH202_F" CAP ID=C3 C=100 pF IND ID=L1 (1008) L=33 nH CAP ID=C2 C=100 pF CAP ID=C6 C=2.7 pF PORT P=2 Z=50 Ohm The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-330X_B) is recommended. C6 is located at silk screen marker “C” on the WJ evaluation board. S-Parameters Vd = +11.0V, Temp = +25°C 20 19 18 17 16 15 14 13 12 11 10 700 0 Noise Figure vs. Frequency -5 S21 -10 -15 S22 -20 S11 800 900 1000 Frequency (MHz) Vd = 11.0V, Temp = 25°C 5 Noise Figure (dB) S21 (dB) 4. PORT P=1 Z=50 Ohm S11 & S22 (dB) 2. 3. CAP ID=C4 (0805) C=1000 pF + 24 dBm @ -45 dBc ACPR Notes: 1. CAP ID=C5 (1206) C=100000 pF + 11V Typical RF Performance at 25 C -25 1100 4 3 2 1 0 700 800 900 1000 Frequency (MHz) 1100 OIP3 vs. Pout ACPR vs. Channel Power Vd = +11.0V, Temp = +25°C 900 MHz, IS-95 Ch. Fwd. ± 885KHz offset, 30 KHz Meas. BW -40 -45 50 ACPR (dBc) OIP3 (dBm) 55 45 40 -50 -55 -60 -65 -70 35 5 7 9 11 13 Pout (dBm) 15 17 -75 15 17 19 21 23 Output Channel Power (dBm) 25 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 4 of 7 August 2009 AH202 1W High Linearity Amplifier Application Circuit: 1900 MHz (AH202-PCB1900) Typical RF Performance at 25 C Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power 1900 MHz 15 dB - 17 dB - 10 dB + 29.7 dBm + 46 dBm Noise Figure Supply Voltage Supply Current PORT P=1 Z=50 Ohm CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH TLIN ID=TL1 Z0=50 Ohm EL=31 Deg F0=1900 MHz CAP ID=L2 C=2.4 pF 3.8 dB +11 V 330 mA CAP ID=C2 C=56 pF CAP ID=C7 C=1.0 pF PORT P=2 Z=50 Ohm The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended. C8 is located at silk screen marker “7” on the WJ evaluation board. 16 15 14 13 12 11 10 9 8 7 6 1700 S-Parameters Noise Figure Vd = +11.0V, Temp = +25C Vd = +11.0 V, Temp = +25°C 6 0 S21 -5 -10 S22 -15 S11 -20 1800 1900 2000 2100 -25 2200 Frequency (MHz) 55 5 4 3 2 1 0 1700 1800 1900 Frequency (MHz) 2000 OIP3 vs. Pout ACPR vs. Channel Power Vd = +11.0 V, Temp = +25°C 1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW -40 -45 50 ACPR (dBc) OIP3 (dBm) SUBCKT ID=S1 NET="AH202_F" Noise Figure (dB) S21 (dB) 3. CAP ID=C4 (0805) C=1000 pF S11 & S22 (dB) 2. CAP ID=C5 (1206) C=1e5 pF + 23 dBm @ -45 dBc ACPR Notes: 1. + 11V 45 40 -50 -55 -60 -65 -70 35 5 7 9 11 13 15 17 Pout (dBm) -75 14 16 18 20 22 Output Channel Power (dBm) 24 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 5 of 7 August 2009 AH202 1W High Linearity Amplifier Application Circuit: 2140 MHz (AH202-PCB2140) Typical RF Performance at 25 C Frequency S21 - Gain S11 S22 Output P1dB Output IP3 W-CDMA Ch. Power PORT P=1 Z=50 Ohm CAP ID=L2 C=2.2 pF CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH SUBCKT ID=S1 NET="AH202_F" TLIN ID=TL1 Z0=50 Ohm EL=28 Deg F0=2140 MHz 4.8 dB +11 V 330 mA Noise Figure Supply Voltage Supply Current CAP ID=C5 (1206) C=1e5 pF CAP ID=C4 (0805) C=1000 pF + 20.5 dBm @ -45 dBc ACLR Notes: 1. 2. + 11V 2140 MHz 15 dB - 8 dB - 13 dB + 29.4 dBm + 45.5 dBm CAP ID=C2 C=56 pF CAP ID=C7 C=1.0 pF PORT P=2 Z=50 Ohm The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended. C7 is located at silk screen marker “6” on the WJ evaluation board. 3. 4. S-Parameters Noise Figure Vd = +11.0V, Temp = +25°C 16 0 6 -5 5 Vd = + 11V, Temp = 25°C -10 10 -15 S22 8 -20 6 2000 2100 2200 Frequency (MHz) 4 3 2 1 0 2000 -25 2300 2100 2200 Frequency (MHz) 2300 OIP3 vs. Pout ACLR vs. Channel Power Vd = +11.0 V, Temp = +25°C f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, ±5 MHz offset -40 50 ACLR (dBc) OIP3 (dBm) 55 Noise Figure (dB) S21 (dB) S11 12 S11 & S22 (dB) S21 14 45 40 35 -45 -50 -55 -60 5 7 9 11 13 15 17 Pout (dBm) 15 16 17 18 19 20 21 Output Channel Power (dBm) 22 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 6 of 7 August 2009 AH202 1W High Linearity Amplifier Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Product Marking The component will be lasermarked with a “AH202F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class III Passes between 500 and 1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflows Standard: JEDEC Standard J-STD-020 Functional Pin Layout Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND or N/C GND or N/C RF Input GND or N/C GND or N/C GND or N/C No Connect GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND or N/C GND or N/C GND or N/C GND or N/C RF Output GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Backside paddle is RF and DC ground. Pin 7 is required to be not connected or grounded for the AH202 to be functional. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 7 of 7 August 2009