ZSELEC DB154 1.5a surface mount glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
DB151 – DB157
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
DB
A
C
B
D
E
G
Mechanical Data
!
H
K
L
J
M
Case: DB , Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.38 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
Dim
Min
Max
A
6.20
6.50
B
6.80
8.40
C
7.24
8.70
D
0.20
0.38
E
8.12
8.80
G
2.15
3.40
H
1.30
-
J
3.80
4.90
K
0.90
1.40
L
0.45
0.58
M
5.00
5.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
DB151 DB152 DB153 DB154 DB155 DB156 DB157
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.5
A
IFSM
60
A
@IF = 1.5A
VFM
1.1
V
@TA = 25°C
@TA = 125°C
IRM
5.0
500
µA
Cj
25
pF
Typical Thermal Resistance per leg (Note 2)
RθJA
RθJL
40
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Average Rectified Output Current
@TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance per element (Note 1)
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm2 copper pad.
DB151 - DB157
1 of 2
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Z ibo Seno Electronic Engineering Co., Ltd.
DB151 – DB157
I(AV), AVERAGE FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
2.0
60 Hz Resistive or
Inductive load
1.5
1.0
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.1
0.01
0
0.4
100
120
140
80
60
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
0.8
0.6
1.0
1.4
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
100
60
Tj = 25°c
f = 1.0 Mhz
Vsig = 50 mV p-p
Single half-sine-Wave
(JEDEC M ethod)
50
CJ, CAPACITANCE (pF)
IFSM , PEAK FORWARD SURGE CURRENT (A)
40
40
30
20
10
10
1
0
1
1
10
10
100
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
NUM BER OF CYCLES AT 60 Hz
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DB151 - DB157
2 of 2
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