<TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high 1 ○ NC 20 IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 ● With clamping diodes IN6→ 7 14 →O6 ● Driving available with PMOS IC output of 6 ~ 16V or IN7→ 8 13 →O7 IN8→ 9 12 →O8 current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO > 50V) INPUT ● High-current driving (Io(max) = –500mA) with TTL output ● Output current-sourcing type Vs 11 10 Package type APPLICATIONS OUTPUT GND 20P2N-A NC : No connection Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems CIRCUIT DIAGRAM and relays, solenoids, or small motors. VS FUNCTION 20K The M54562FP each have eight circuits, which are made of input inverters and current-sourcing outputs. 8.5K The outputs are made of PNP transistors and NPN INPUT Darlington transistors. The PNP transistor base current is 7.2K 3K 1.5K constant. A clamping diode is provided between each output OUTPUT and GND. VS and GND are used commonly among the eight GND circuits. The inputs have resistance of 8.5kΩ, and voltage of up to 30V The eight circuits share the VS and GND. is applicable. Output current is 500 mA maximum. Supply The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :Ω voltage VS is 50V maximum. ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol VCEO # VS VI IO IF # VR Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output , L Current per circuit output, H Ta = 25℃, when mounted on board # : Unused Input pins must be connected to GND. 2012.May 1 Ratings –0.5 ～ +50 50 –0.5 ～ +30 – 500 – 500 50 1.10 –20 ～ +75 –55 ～ +125 Unit V V V mA mA V W ℃ ℃ <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol Parameter VS Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) IO min 0 Limits typ － max 50 0 － –350 0 － –100 Duty Cycle no more than 5% Duty Cycle no more than 30% Unit V mA VIH “H” input voltage 2.4 5.0 30 V VIL “L” input voltage 0 － 0.2 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol Parameter IS(leak) # Supply leak current VCE(sat) Collector-emitter saturation voltage II Input current IS Supply current Clamping diode forward voltage Clamping diode reverse current VF # IR Test conditions VS = 50V, VS = 10V, VS = 10V, VI = 5V VI = 25V VS = 50V, VI = 0.2V VI = 2.4V, IO = -350mA VI = 2.4V, IO = -100mA VI = 5V (all input) IF = -350mA VR = 50V min Limits typ* max — — — — — — — 1.75 1.5 0.48 2.8 5.6 100 2.4 2.0 0.75 4.7 15.0 — -1.2 -2.4 V 100 μA — — Unit μA V mA mA *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. # : Unused Input pins must be connected to GND. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol ton toff Parameter Test conditions Turn-on time Turn-off time CL = 15pF（note 1） max — — VS Measured device INPUT 50% 50% OUTPUT PG 50Ω RL OUTPUT CL 50% ｔon (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes 2012.May Limits typ 110 5200 TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT min — — 2 50% ｔoff Unit ｎｓ ｎｓ <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE TYPICAL CHARACTERISTICS Output Saturation Voltage Thermal Derating Factor Characteristics Collector Current Characteristics 2.0 -500 Output current IO (mA) Power dissipation Pd (W) VS=10V VI=2.4V 1.5 1.0 0.5 0 0 25 50 75 -400 -300 Ta=75℃ -200 Ta=25℃ -100 0 Ta=-20℃ 100 0 0.5 1.0 1.5 2.0 2.5 Collector saturation voltage VCE(sat) (V) Ambient temperature Ta (℃) Duty-Cycle-Output current Characteristics Duty-Cycle-Output current Characteristics -500 -500 Output current IO (mA) Output current IO (mA) ① -400 -300 ② -200 ③ -100 ④ ⑤ ⑦⑥ ⑧ •The collector current values represent the current per circuit. •Repeated frequency ≥10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25℃ 0 0 20 40 60 -400 -300 ① -200 -100 0 80 100 0 20 80 100 500 -500 Forward bias current IF (mA) VS=20V VS-VO=4V Output current IO (mA) 60 Clamping Diode Characteristics Grounded Emitter Transfer Characteristics -400 -300 Ta=75℃ -200 Ta=25℃ Ta=-20℃ -100 0 0.2 0.4 0.6 0.8 400 300 200 Ta=25℃ Ta=75℃ Ta=-20℃ 100 0 1.0 Input voltage VI (V) 2012.May 40 Duty cycle (%) Duty cycle (%) 0 ② ③ ④⑤ ⑥⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency ≥10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75℃ 0 0.5 1.0 1.5 Forward bias voltage VF (V) 3 2.0 <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE Input Characteristics Input Characteristics 1.0 5 VS=20V 0.6 Input current II (mA) Input current II (mA) VS=20V 0.8 Ta=-20℃ Ta=25℃ 0.4 Ta=75℃ 0.2 0 0 1 2 3 4 Ta=-20℃ 3 Ta=25℃ 2 Ta=75℃ 1 0 5 Input voltage VI (V) 2012.May 4 0 5 10 15 Input voltage VI (V) 4 20 25 <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE PACKAGE OUTLINE 2012.May 5 <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE Keep safety first in your circuit designs! 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