MS2223 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 70 W MINIMUM Gp = 6.7 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under long pulse formats. ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG Parameter Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Thermal Data RTH(j-c) (Tcase = 25°° C) Junction-Case Thermal Resistance* * Applies only to rated RF operation. Value Unit 0.68 ° C/W 32 8.0 200 200 - 65 to + 200 V A W °C °C MSC0XXXA.DOC 5-13-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2223 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° 25° C) STATIC Symbol Test Conditions BVCBO BVCER IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V BVEBO ICES hFE DYNAMIC Symbol POUT hC GP Condition s Test Conditions FREQUENCY 1025 MHz 1090 MHz Pin = 15W Vcc = 28V MSC0XXXA.DOC 5-13-99 Zin VCC = 28 V VCC = 28 V VCC = 28 V 4.7 + j4.7 4.7 + j3.9 Max. Unit Min. Value Typ. Max. Unit 70 45 6.7 Pulse Width: 100 m S Duty Cycle: 2% IMPEDANCE DATA: Value Typ. 55 55 3.5 ---20 IE = 0 mA RBE = 10 W IC = 0 mA VB E = 0 V IC = 2A f = 1090 MHz PIN = 15 W f = 1090 MHz PIN = 15 W f = 1090 MHz PIN = 15 W Min. Zcl 3.6 + j4.3 3.3 + j4.4 ---------------- ---------- ---------20 200 ---------- V V V mA ---- W % dB MS2223 PACKAGE MECHANICAL DATA MSC0XXXA.DOC 5-13-99